mm e65r280q datasheet parameter value unit v ds @ t j, max 700 v r ds(on), max 0 .28 ? v gs(th), typ 3 v i d 13.8 a q g, typ 27.8 n c order code marking temp. range package packing rohs status mme 6 5 r 280 qr h 6 5 r 280q - 55 ~ 150 o c to - 2 63(d2pak) reel compliant mm e 6 5 r 28 0 q 65 0v 0.28 ? ? description mme 6 5 r 280 q is power mosfet using m agna c hip ? s advanced super junction technology that can realize very low on - resistance and gate charge. it will provide much high efficiency by using optimized charge coupling technology. these user friendly devices give an advantage of l ow emi to designers as well a s low switching loss . ? features ? low p ower l oss by h igh speed s witching and l ow o n - r esistance ? 100% a valanche t ested ? green p ackage ? p b - f ree p lating, halogen - f ree ? key paramete r s ? ordering information ? applications ? pfc p ower s upply s tages ? switching a pplications ? adapter d ? package & internal circui t apr. 2017 revision 1.0 magnachip semiconductor ltd . 1
mm e65r280q datasheet parameter symbol rating unit note drain ? s ource voltage v dss 6 5 0 v gate ? source voltage v gss 30 v continuous drain current i d 1 3.8 a t c = 25 o c 8.7 a t c = 100 o c pulsed drain current (1) i dm 41.4 a power dissipation p d 104.2 w single - pulse avalanche energy e as 290 mj mosfet dv/dt ruggedness dv/dt 50 v/ns diode dv/dt ruggedness (2) dv/dt 15 v/ns storage temperature t stg - 55 ~150 o c maximum operating junction temperature t j 150 o c 1) id limited by maximum junction temperature 2) pulse width t p limited by t j,max parameter symbol value unit thermal resistance , junction - case max r thjc 1. 2 o c/ w thermal resistance, junction - ambient max (3) r thja 62 o c/ w 3) device mounted on minimal footprint of pcb. ? thermal characteristics ? a bsolut e maximum rating (t c =25 o c unless otherwise specified) apr. 2017 revision 1.0 magnachip semiconductor ltd . 2
mm e65r280q datasheet parameter symbol min. typ. max. unit test condition drain ? s ource b reakdown voltage v (br)dss 6 5 0 - - v v gs = 0 v, i d = 250ua gate t hreshold v oltage v gs(th) 2 3 4 v v ds = v gs , i d = 250ua zero g ate v oltage d rain c urrent i dss - - 1 u a v ds = 6 5 0v, v gs = 0v gate l eakage c urrent i gss - - 100 na v gs = 3 0 v, v ds = 0v drain - s ource o n s tate r esistance r ds(on) - 0.2 5 0. 28 ? v gs = 10v, i d = 4.4 a parameter symbol min. typ. max. unit test condition input c apacitance c iss - 1032 - pf v ds = 25v, v gs = 0 v, f = 1.0mhz output c apacitance c oss - 1192 - reverse t ransfer c apacitance c rss - 54.8 - effective o utput c apacitance e nergy r elated ( 4 ) c o(er) - 29.3 - v ds = 0v to 52 0 v, v gs = 0 v, f = 1.0mhz turn o n d elay t ime t d(on) - 23.5 - ns v gs = 10v, r g = 25, v ds = 3 25 v, i d = 1 3.8 a rise t ime t r - 59 - turn o ff d elay t ime t d(off) - 151 - fall t ime t f - 52 - tot al g ate c harge q g - 27.8 - nc v gs = 10v, v ds = 52 0 v, i d = 1 3.8 a gate ? s ource c harge q gs - 9.9 - gate ? d rain c harge q gd - 7.1 - gate resistance r g - 21 - ? v g s = 0v , f = 1.0mhz 4 ) c o(er) is a capacitance that gives the same stored energy as c oss while v ds is rising from 0v to 80% v (br)dss ? static characteristics (t c =25 o c unless otherwise specified) ? dynamic characteristics (t c =25 o c unless otherwise specified) apr. 2017 revision 1.0 magnachip semiconductor ltd . 3
mm e65r280q datasheet parameter symbol min. typ. max. unit test condition continuous d iode f orward c urrent i s - - 1 3.8 a diode f orward v oltage v sd - - 1.4 v i s = 1 3.8 a, v gs = 0 v reverse r ecovery t ime t rr - 377 - ns i s = 1 3.8 a di/dt = 100 a/s v dd = 100 v reverse r ecovery c harge q rr - 5.2 - u c reverse r ecovery c urrent i r r m - 27.6 - a ? r e verse diode characteristics (t c =25 o c unless otherwise specified) apr. 2017 revision 1.0 magnachip semiconductor ltd . 4
mm e65r280q datasheet ? characteristic graph apr. 2017 revision 1.0 magnachip semiconductor ltd . 5
mm e65r280q datasheet apr. 2017 revision 1.0 magnachip semiconductor ltd . 6
mm e65r280q datasheet apr. 2017 revision 1.0 magnachip semiconductor ltd . 7
mm e65r280q datasheet ? test circuit apr. 2017 revision 1.0 magnachip semiconductor ltd . 8
mm e65r280q datasheet ? physical dimension to - 263(d2pak) [ u nit:mm] apr. 2017 revision 1.0 magnachip semiconductor ltd . 9
mm e65r280q datasheet disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. seller?s customers using or selling seller?s products for use in such applications do so at their own risk and agree to fully defend and inde mnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consid er responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registere d trademark of magnachip semiconductor ltd. apr. 2017 revision 1.0 magnachip semiconductor ltd . 10
|
