2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 r f powe r transistor s 2n591 3 jede c to-3 9 silico n n-p- n overla y transisto r 12.5-volt , high-gai n typ e fo r class- c amplifier s i n vhf/uh f communication s equipmen t features: ? hig h powe r gain , hig h powe r outpu t . . . a t 12. 5 v : 2- w (typ. ) outpu t a t 47 0 mh z (7-d b gain ) 2-w (typ. ) outpu t at 250 mhz (9-d b gain ) 2- w (txp. ) outpu t a t 17 5 mh z (13-d b gain ) a t 8 v : 1,5- w (typ. ) outpu t a t 47 0 mh z (4.8-d b gain ) 1.5- w (typ. ) outpu t a t 25 0 mh z (7,0-d b gain ) 1.5- w (typ. ) outpu t a t 17 5 mh z (10-d b gain ) (br)ce s (br)ce o eb o maximu m ratings , absolute-maximum values: ? collector-to-bas e voltage . v cb q collector-to-emitte r breakdow n voltage : wit h bas e shorte d t o emitte r , . . . \h bas e ope n \ emitter-to-bas e voltag e .. . v ? continuou s collecto r curren t i , ^transisto r dissipation : f a t cas e temperature s u p t o 75c . . a t cas e temperature s abov e 7s c . ? temperatur e range : storag e be- operatin g (junction ) . . *lea d temperature : a t distance s > 1/3 2 in . (0. 8 mm ) fro m seatin g plan e fo r 10 s max . . 3 6 1 4 3. 5 derat e a t 0.002 8 w / c 23 0 nj semi-conductor s reserve s the righ t to chang e tes t conditions , parameter s limit s and packag e dimension s withou t notic e informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . howeve r n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y rha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
electrica l characteristics , a t cai . t.mp.ratur . (t c ) = 25 c stati c characteristi c collector-cutof f curren t bas e connecte d t o emitte t bas e ope n collector-to-bas e breakdow n voltag e collector-to-emitte t breakdow n voltage : wit h bas e ope n wit h bas e connecte d t o emitte r emittet-to-bas e breakdow n voltag e therma l resistance : (junction-to-case ) symbo l 1 ce s 'ce o v (br)cb o v (br)ce o v (br)ce s v (br)eb o t: 'j- c tes t condition s d c voltag e (v ) v c e 12. 5 1 0 v e b 0 d c curren t (ma ) i e 0 0. 5 ' b 0 0 0 ' c 0. 5 25 " 25 0 limit s min . 3 6 1 4 3 6 3. 5 - max . 1.0 b 0. 3 - - - 35. 7 unit s m a m a v v v c/ w 1 pulse d throug h a 25-m h inductor ; dut y (acto r ? - 50% . dynami c b t_ = 100c . v tes t & condition s powe r outpu t (v c c 12. 5 v) : p | e -0. 1 w large-signa l common-emitte r powe r gai n (v c c = 12. 5 v) : p, e 0. 1 w collecto r efficienc y (v c c = 12. 5 v) : p| e * 0. 1 w common-bas e outpu t capicatanc e v cb .iz v gain-bandwidt h produc t vc e = 1 2 v ' ' c = 20 m a symbo l p o e g p e ^ c c ob o i t frequenc y mh z 17 5 17 5 17 5 1 - limit s minimu m 1.7 5 12. 4 5 0 typica l 1 5 (max. ) - 90 0 unit s w o b % p f mh z i n accordanc e wit h je0e c registratio n dat a forma t js- 6 rdf-3/js- 9 rdf-7 . downloaded from: http:///
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