data sheet 1 05.99 l v ds 250 v l i d 0.04 a l r ds(on) 100 w l n channel l depletion mode l high dynamic resistance l available grouped in v gs(th) type ordering code tape and reel information pin configuration marking package 123 bss 139 q62702-s612 e6327: 3000 pcs/reel; g s d sts sot-23 bss 139 q67000-s221 e7941: 3000 pcs/reel; v gs(th) selected in groups: (see page 3) maximum ratings parameter symbol values unit drain-source voltage v ds 250 v drain-gate voltage, r gs = 20 k w v dgr 250 gate-source voltage v gs 20 esd sensitivity (hbm) as per mil-std 883 C class 1 continuous drain current, t a = 25 ?c i d 0.04 a pulsed drain current, t a = 25 ?c i d puls 0.12 max. power dissipation, t a = 25 ?c p tot 0.36 w operating and storage temperature range t j , t stg C 55 + 150 ?c thermal resistance, chip-ambient (without heat sink) chip-substrate C reverse side 1) r thja r thjsr 350 285 k/w din humidity category, din 40 040 C e C iec climatic category, din iec 68-1 C 55/150/56 1) for package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. sipmos a small-signal transistor bss 139
bss 139 data sheet 2 05.99 electrical characteristics at t j = 25 ?c, unless otherwise specified. parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs = - 3 v, i d = 0.25 ma v (br)dss 250 C C v gate threshold voltage v ds = 3 v, i d = 1 ma v gs(th) - 1.8 - 1.4 - 0.7 drain-source cutoff current v ds = 250 v, v gs = - 3 v t j = 25 ?c t j = 125 ?c i dss C C C C 100 200 na m a gate-source leakage current v gs = 20 v, v ds = 0 i gss C 10 100 na drain-source on-resistance v gs = 0 v, i d = 0.014 a r ds(on) C 75 100 w dynamic characteristics forward transconductance v ds 3 2 i d r ds(on)max , i d = 0.04 a g fs 0.05 0.07 C s input capacitance v gs = 0, v ds = 25 v, f = 1 mhz c iiss C 85 120 pf output capacitance v gs = 0, v ds = 25 v, f = 1 mhz c oss C610 reverse transfer capacitance v gs = 0, v ds = 25 v, f = 1 mhz c rss C23 turn-on time t on , ( t on = t d(on) + t r ) v dd =30v, v gs = - 2 v ... + 5 v, r gs =50 w , i d = 0.15 a t d(on) C46ns t r C1015 turn-off time t off , ( t off = t d(off) + t f ) v dd =30v, v gs = - 2 v ... + 5 v, r gs =50 w , i d = 0.15 a t d(off) C1013 t f C1520
bss 139 data sheet 3 05.99 package outline 1) a specific group cannot be ordered separately. each reel only contains transistors from one group. electrical characteristics (contd) at t j = 25 ?c, unless otherwise specified. parameter symbol values unit min. typ. max. reverse diode continuous reverse drain current t a = 25 ?c i s C C 0.04 a pulsed reverse drain current t a = 25 ?c i sm C C 0.12 diode forward on-voltage i f = 0.08 a, v gs = 0 v sd C 0.7 1.2 v v gs(th) grouping symbol limit values unit test condition min. max. range of v gs(th) d v gs(th) C 0.15 v C threshold voltage selected in groups: 1) f g a b c d v gs(th) C 1.535 C 1.635 C 1.735 C 1.835 C 1.935 C 2.035 C 1.385 C 1.485 C 1.585 C 1.685 C 1.785 C 1.885 v v v v v v v ds1 = 0.2 v; v ds2 = 3 v; i d = 10 m a sot-23 dimensions in mm
bss 139 data sheet 4 05.99 characteristics at t j = 25 ?c, unless otherwise specified. total power dissipation p tot = f ( t a ) typ. output characteristics i d = f ( v ds ) parameter: t p = 80 m s safe operating area i d = f ( v ds ) parameter: d = 0.01, t c = 25 ?c typ. drain-source on-resistance r ds(on) = f ( i d ) parameter: v gs
bss 139 data sheet 5 05.99 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 m s, v ds 3 2 i d r ds(on)max. drain-source on-resistance r ds(on) = f ( t j ) parameter: i d = 0.014 a, v gs = 0 v, (spread) typ. forward transconductance g fs = f ( i d ) parameter: v ds 3 2 i d r ds(on)max. , t p = 80 m s typ. capacitances c = f ( v ds ) parameter: v gs = 0, f = 1 mhz
bss 139 data sheet 6 05.99 gate threshold voltage v gs(th) = f ( t j ) parameter: v ds = 3 v, i d = 1 ma, (spread) drain current i d = f ( t a ) parameter: v gs 3 3 v forward characteristics of reverse diode i f = f ( v sd ) parameter: t p = 80 m s, t j , (spread) drain-source breakdown voltage v (br) dss = b v (br)dss (25 ?c)
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