absolute maximum ratings parameter units i d @ v gs = 10v, t c = 25c continuous drain current 35* i d @ v gs = 10v, t c = 100c continuous drain current 28 i dm pulsed drain current 140 p d @ t c = 25c max. power dissipation 125 w linear derating factor 1.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 340 mj i ar avalanche current 35 a e ar repetitive avalanche energy 12.5 mj dv/dt peak d iode recovery dv/dt 4.5 v/ns t j operating junction -55 to 150 t stg storage temperature range weight 9.3 (t ypical) g hexfet ? mosfet technology is the key to international rectifiers advanced line of power mosfet transistors.the efficient geometry design achieves very low on-state resistance combined with high transconductance. hexfet transistors also feature all of the well-established advantages of mosfets, such as voltage control, veryfast switching, ease of paralleling and electrical parameter temperature stability. they are well-suited for applications such as switching power supplies, motorcontrols, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. the hexfet transistors totally isolated package eliminates the need for additionalisolating material between the device and the heatsink. this improves thermal efficiency and reduces drain capacitance. o c a power mosfet surface mount (d3 pak) www.irf.com 1 60v, n-channel hexfet ? mosfet technology d3 pak product summary part number r ds(on) i d IRFMJ044 0.04 ? 35a* features: simple drive requirements ease of paralleling hermetically sealed electrically isolated dynamic dv/dt rating light-weight screened to jantx level per mil-prf-19500 for footnotes refer to the last page *current is limited by package IRFMJ044 pd-97258 downloaded from: http:///
IRFMJ044 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 60 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.68 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.04 v gs = 10v, i d = 28a resistance 0.05 v gs = 10v, i d = 35a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 17 s ( )v ds > 15v, i ds = 28a i dss zero gate voltage drain current 25 v ds = 48v ,v gs =0v 250 v ds = 48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 88 v gs =10v, i d = 35a q gs gate-to-source charge 15 nc v ds = 30v q gd gate-to-drain (miller) charge 52 t d (on) turn-on delay time 23 v dd = 30v, i d = 35a, t r rise time 130 v gs =10v, r g = 9.1 ? t d (off) turn-off delay time 81 t f fall time 79 c iss input capacitance 2400 v gs = 0v, v ds = 25v c oss output capacitance 1100 p f f = 1.0mhz c rss reverse transfer capacitance 230 na ? ns a for footnotes refer to the last page thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 1.0 r thjcs case-to-sink 0.21 r thja junction-to-ambient 48 ty pical socket mount c/w source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 35* i sm pulse source current (body diode) 140 v sd diode forward voltage 2.5 v t j = 25c, i s = 35a, v gs = 0v t rr reverse recovery time 220 ns t j = 25c, i f = 35a, di/dt 100a/ s q rr reverse recovery charge 1.6 c v dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a ? *current is limited by package downloaded from: http:///
www.irf.com 3 IRFMJ044 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics downloaded from: http:///
IRFMJ044 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage downloaded from: http:///
www.irf.com 5 IRFMJ044 fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature downloaded from: http:///
IRFMJ044 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circui t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 1 0 . downloaded from: http:///
www.irf.com 7 IRFMJ044 i sd 35a, di/dt 100a/ s, v dd 60v, t j 150c pulse width 300 s; duty cycle 2% repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 0.5mh peak i l = 35a, v gs = 10v footnotes: case outline and dimensions d3 pak 1 = drain 2 = s ource 3 = gat e pin as s ignment s 1 2 3 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 09/2006 downloaded from: http:///
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