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irfr/u024n preliminary hexfet ? power mosfet s d g parameter typ. max. units r jc junction-to-case CCC 3.3 r ja case-to-ambient (pcb mount)** CCC 50 c/w r ja junction-to-ambient CCC 110 thermal resistance v dss = 55v r ds(on) = 0.075 i d = 17a ? description www.irf.com 1 d -pak to-252aa i-pak to-251aa l ultra low on-resistance l surface mount (irfr024n) l straight lead (irfu024n) l advanced process technology l fast switching l fully avalanche rated fifth generation hexfets from international rectifier utilize advancedprocessing techniques to achieve the lowest possible on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu series) is for through-hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ** when mounted on 1" square pcb (fr-4 or g-10 material ) . for recommended footprint and soldering techniques refer to application note #an-994 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 17 i d @ t c = 100c continuous drain current, v gs @ 10v 12 a i dm pulsed drain current ?? 68 p d @t c = 25c power dissipation 45 w linear derating factor 0.30 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ?? 71 mj i ar avalanche current ? 10 a e ar repetitive avalanche energy ? 4.5 mj dv/dt peak diode recovery dv/dt ?? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings pd- 9.1336a downloaded from: http:///
irfr/u024n 2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 10a, v gs = 0v ? t rr reverse recovery time CCC 56 83 ns t j = 25c, i f = 10a q rr reverse recoverycharge CCC 120 180 nc di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 17 ? 68 a ? v dd = 25v, starting t j = 25c, l = 1.0mh r g = 25 , i as = 10a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? pulse width 300s; duty cycle 2%. ? uses irfz24n data and test conditions. ? i sd 10a, di/dt 280a/s, v dd v (br)dss , t j 175c notes: ? this is applied for i-pak, l s of d-pak is measured between lead and center of die contact. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.052 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 0.075 v gs = 10v, i d = 10a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 4.5 CCC CCC s v ds = 25v, i d = 10a ? CCC CCC 25 a v ds = 55v, v gs = 0v CCC CCC 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 20 i d = 10a q gs gate-to-source charge CCC CCC 5.3 nc v ds = 44v q gd gate-to-drain ("miller") charge CCC CCC 7.6 v gs = 10v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 4.9 CCC v dd = 28v t r rise time CCC 34 CCC i d = 10a t d(off) turn-off delay time CCC 19 CCC r g = 24 t f fall time CCC 27 CCC r d = 2.6 , see fig. 10 ? between lead, CCC CCC 6mm (0.25in.)from package and center of die contact ? c iss input capacitance CCC 370 CCC v gs = 0v c oss output capacitance CCC 140 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 65 CCC ? = 1.0mhz, see fig. 5 nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current downloaded from: http:///
irfr/u024n www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 0.1 1 10 100 i , d rain-to-source current (a) d v , drain-to-source volta g e (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20s pulse w idth t = 25c c a 4.5v 1 10 100 0.1 1 10 100 4.5v i , d rain-to-source current (a) d v , drain-to-source volta g e (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20s pulse w idth t = 175c c a 1 10 100 4567891 0 t = 25c j gs v , g ate-to-source volta g e ( v ) d i , drain-to-source current (a) t = 175c j a v = 25v 20s pulse w idth ds 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source o n resistance ds(on) (n orm alized) v = 10v gs a i = 17a d downloaded from: http:///
irfr/u024n 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 0 100 200 300 400 500 600 700 1 10 100 c, capacitance (pf) ds v , drain-to-source volta g e (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss g s g d ds rss g d oss ds g d c iss c oss c rss 0 4 8 12 16 20 0481 21 62 0 q , total gate char g e (nc) g v , g ate-to-source voltage (v) gs a for test circuit see figure 13 v = 44v v = 28v i = 10a dsds d 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 t = 25c j v = 0v gs v , source-to-drain volta g e ( v ) i , reverse drain current (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source volta g e (v) ds i , drain current (a) operation in this area limited by r d ds(on) 10s 100s 1ms 10ms a t = 25c t = 175c single pulse cj downloaded from: http:///
irfr/u024n www.irf.com 5 fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 4.5v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t , rectan g ular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) a therm al r esponse (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c 0 4 8 12 16 20 25 50 75 100 125 150 175 c i , drain current (amps) d t , case temperature (c) a downloaded from: http:///
irfr/u024n 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 0 20 40 60 80 100 120 140 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a startin g t , junction temperature (c) i top 4.2a 7.2a bottom 10a v = 25v d dd downloaded from: http:///
irfr/u024n www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer ? * downloaded from: http:///
irfr/u024n 8 www.irf.com package outline to-252aa outlinedimensions are shown in millimeters (inches) to-252aa (d-park) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) min. 0.58 (.023) 0.46 (.018) lead assignments 1 - gate 2 - d ra in 3 - s ou rce 4 - d ra in 10.42 (.410) 9.40 (.370) notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions show n are before solder dip, solder dip max. +0.16 (.006). international rectifier lo go assembly lo t code exa m ple : this is an irfr120 w ith assembly lot code 9u1p first portion of part number second portion of part number 120 irfr 9u 1p a downloaded from: http:///
irfr/u024n www.irf.com 9 package outline to-251aa outlinedimensions are shown in millimeters (inches) to-251aa (i-park) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g ate 2 - d rain 3 - so u rc e 4 - d rain notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions show n are before solder dip, solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018) international rectifier lo go assembly lot co de first po rtion of part numbe r second portion of part number 120 9u 1p exam ple : this is an irfu120 w ith assembly lo t code 9u1p irfu downloaded from: http:///
irfr/u024n 10 www.irf.com world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 4/98 tape & reel information to-252aadimensions are shown in millimeters (inches) tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inc h downloaded from: http:///
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:///

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