<~ba.ml-l.onau.ckoi l/^ioaucti, line. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 silico n pn p powe r transisto r 2sa88 2 descriptio n ? hig h powe r dissipation - : p c = 100w(max.)@t c =25 c ? collector-emitte r breakdow n voltage - :v (b r)ceo=-130v(min. ) application s ? designe d fo r powe r an d switchin g applications . absolut e maximu m ratings(t a =25'c ) pi n 1.bas e 2 . emitte r 3 . collecto r (case ) to- 3 packag e symbo l vcb o vce o veb o i c p c t , tst g paramete r collector-bas e voltag e collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s collecto r powe r dissipatio n @t c =25" c junctio n temperatur e storag e temperatur e valu e -13 0 -13 0 - 5 - 7 10 0 15 0 -65-20 0 uni t v v v a w " c ? c i u v - \ t r l 4 /, > i ' ? di m a b c d < j h k l k g u v -n- 1 ' i 4u- d - u " n-l * l^ v /t \^ " 3 ^ ^ ^ / -be ! ill l m w 3 9 25.3 0 7.8 0 0.9 0 1.4 0 1 1 0 5 1.u d 167 5 194 0 40 0 , ,jbl? , 4;t o i c j jp l ^ / i ^ c \1 ma x 0 0 26.6 7 8,5 0 1.1 0 1.6 0 9 2 4 s 13.5 0 i f ,0 5 196 2 42 0 302 0 _!3 l t ; l k 1^ 3 t , b i \j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conduetor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f eoing to press . however . nj semi-conductor s assume s no responsibilit y fo r any error s or omission s discovere d in its use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin e orders. qualit y semi-conductor s downloaded from: http:///
silico n pn p powe r transisto r 2sa88 2 electrica l characteristic s tj=25' c unles s otherwis e specifie d symbo l v(br)ce o vce(sat)- 1 vce(sat)- 2 vse(on ) icb o ieb o hpe- 1 hpe- 2 paramete r collector-emitte r breakdow n voltag e collector-emitte r saturation voltag e collector-emitte r saturation voltag e base-emitte r o n voltag e collecto r cutof f curren t emitte r cutof f curren t d c curren t gai n d c curren t gai n condition s l c = -30ma ; i b = 0 lc = -3a ; i b = -0.3 a lc=-7a ; i 8 =-1.5 a lc = -3a ; vce = -4 v v c b=-130v;i e = 0 v eb = -5v ; l c = 0 lo = -1a ; v ce = -4 v l c = -3a ; v ce = -4 v mi n -13 0 4 0 2 0 typ . ma x -1. 0 -3. 0 -1. 6 -0. 1 -0. 1 uni t v v v v m a m a downloaded from: http:///
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