absolute maximum ratings ( per die) parameter units i d @ v gs = 12v, t c = 25c continuous drain current 1.6 i d @ v gs = 12v, t c = 100c continuous drain current 1.0 i dm pulsed drain current ? 6.4 p d @ t c = 25c max. power dissipation 12 w linear derating factor 0.1 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 62 mj i ar avalanche current ? 1.6 a e ar repetitive avalanche energy ? 1.2 mj dv/dt p eak diode recovery dv/dt ? 3.5 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 0.89 (typical) g pre-irradiation international rectifiers rad-hard tm hexfet ? mosfet technology provides high performance power mosfets for space applications. this technology has over a de- cade of proven performance and reliability in satellite ap- plications. these devices have been characterized for both total dose and single event effects (see). the com- bination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened power mosfet surface mount (lcc-28) 04/22/03 www.irf.com 1 features: single event effect (see) hardened low r ds(on) low total gate charge proton t olerant simple drive requirements ease of paralleling hermetically sealed ceramic package surface mount for footnotes refer to the last page lcc-28 light weight product summary part number radiation level r ds(on) i d irhq7214 100k rads (si) 2.25 ? 1.6a irhq3214 300k rads (si) 2.25 ? 1.6a irhq4214 600k rads (si) 2.25 ? 1.6a irhq8214 1000k rads (si) 2.25 ? 1.6a irhq7214 250v, quad n-channel rad-hard ? hexfet ? mosfet technology pd - 93828a downloaded from: http:///
irhq7214 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics (per die) parameter min typ max unit test conditions i s continuous source current (body diode) 1.6 i sm pulse source current (body diode) ? 6.4 v sd diode forward voltage 1.5 v t j = 25c, i s = 1.6a, v gs = 0v ? t rr reverse recovery time 226 ns t j = 25c, i f = 1.6a, di/dt 100a/ s q rr reverse recovery charge 900 nc v dd 25v ? t on forward tu rn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance (per die) parameter min typ max units t est conditions r thjc junction-to-case 10.4 electrical characteristics @ tj = 25c (unless otherwise specified) (per die) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 250 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.3 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 2.25 ? v gs = 12v, i d = 1.0a resistance v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 0.9 s ( )v ds > 15v, i ds = 1.0a ? i dss zero gate voltage drain current 25 v ds = 200v, v gs =0v 250 v ds = 200v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 19 v gs = 12v, i d = 1.6a, q gs gate-to-source charge 3.4 nc v ds = 125v q gd gate-to-drain (miller) charge 7.0 t d (on) turn-on delay time 15 v dd = 125v, i d = 1.6a, t r rise time 7.0 v gs = 12v, r g = 7.5 ? t d (off) turn-off delay time 39 t f fall time 42 l s + l d total inductance 6.1 c iss input capacitance 280 v gs = 0v, v ds = 25v c oss output capacitance 70 pf f = 1.0mhz c rss reverse transfer capacitance 18 na ? ? nh ns a measured from the center of drain pad to center of source pad c/w downloaded from: http:///
www.irf.com 3 pre-irradiation irhq7214 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? (per die) parameter 100k rads(si) 1 300k to 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 250 250 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 25 a v ds = 200v, v gs =0v r ds(on) static drain-to-source ? 2.205 2.205 ? v gs = 12v, i d = 1.0a on-state resistance (to-39) r ds(on) static drain-to-source ? 2.25 2.25 ? v gs = 12v, i d = 1.0a on-state resistance (lcc-28) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the t o-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. 1. part numbers irhq7214, irhq3214 and irhq42142. part number irhq8214 fig a. single event effect, safe operating area v sd diode forward voltage ? 1.5 1.5 v v gs = 0v, i s = 1.6a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page radiation characteristics 0 50 100 150 200 250 300 0 -5 -10 -15 -20 vgs vds cu br table 2. single event effect safe operating area (per die) ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v cu 28.0 285 43.0 250 250 250 250 250 br 36.8 305 39.0 250 250 250 225 210 downloaded from: http:///
irhq7214 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 5.0v 0.01 0.1 1 10 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 5 7 9 11 13 v = 50v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 1.6a downloaded from: http:///
www.irf.com 5 pre-irradiation irhq7214 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 0 100 200 300 400 500 600 v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d 0 4 8 12 16 20 0 4 8 12 16 20 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 1.6a v = 50v ds v = 125v ds v = 200v ds 0.1 1 10 100 10 100 1000 operation in this area limited by r ds ( on ) single pulse t t = 150 c = 25 c j c v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms downloaded from: http:///
irhq7214 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 t , case temperature ( c) i , drain current (a) c d v gs downloaded from: http:///
www.irf.com 7 pre-irradiation irhq7214 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v . 25 50 75 100 125 150 0 30 60 90 120 150 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 0.7a 1.0a 1.6a v gs downloaded from: http:///
irhq7214 pre-irradiation 8 www.irf.com ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a ? total dose irradiation with v ds bias. 200 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 50v, starting t j = 25c, l= 48mh, peak i l = 1.6a, v gs = 12v ? i sd 1.6a, di/dt 336a/ s, v dd 250v, t j 150c footnotes: case outline and dimensions lcc-28 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/03 q1 q2 q3 q4 ? pulse width 300 s; duty cycle 2% downloaded from: http:///
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