absolute maximum ratings t a =25c unless otherwise noted units parameter AO6808 20v dual n-channel mosfet product summary v ds = 20v i d = 6a (v gs = 4.5v) r ds(on) = 19m (typical) (v gs = 4.5v) r ds(on) = 20m (typical) (v gs = 4.0v) r ds(on) = 21m (typical) (v gs = 3.1v) r ds(on) = 23m (typical) (v gs = 2.5v) general description the AO6808 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a load swi tch. it is esd protected. tsop6 top view bottom view pin d1/d2 d1/d2 s2 s1 g2 g1 top view 1 2 3 6 5 4 symbol 10 sec steady state v ds v gs 6 4.6 4.6 3.7 i dm 1.3 0.8 0.8 0.5 t j , t stg parameter symbol typ max t 10s 76 95 steady state 118 150 steady state r jl 54 68 c/w r ja c -55 to 150 60 a p d w maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a c/w maximum junction-to-ambient a 12 units parameter t a =25c t a =70c vv i d gate-source voltage drain-source voltage 20 pulsed drain current b continuous drain current a power dissipation a t a =25c junction and storage temperature range t a =70c rev.1.0: february 2014 www.aosmd.com page 1 of 5 downloaded from: http:///
symbol min typ max units bv dss 20 v 1 t j = 55c 5 i gss 10 a v gs(th) 0.5 0.75 1 v i d(on) 60 a 15 19 23 t j =125c 21 27 33 15 20 25 m 16 21 27 m 17 23 30 m g fs 34 s v sd 0.65 1 v i s 1.3 a c iss 620 780 pf c oss 125 pf c rss 64 pf q g (10v) 16.2 21 nc q g (4.5v) 7.7 10 nc q gs 1.5 nc dynamic parameters v gs =0v, v ds =10v, f=1mhz input capacitance output capacitance v gs = 3.1v, i d = 5a switching parameters total gate charge gate source charge total gate charge v gs = 10v, v ds = 10v, i d = 6a maximum body-diode continuous current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m v gs = 2.5v, i d = 2a i s = 1a,v gs = 0v v ds = 5v, i d = 6.0a v gs = 4.0v, i d = 5.5a gate threshold voltage v ds = v gs i d = 250 a v ds = 20v, v gs = 0v v ds = 0v, v gs = 10v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a drain-source breakdown voltage on state drain current i d = 250 a, v gs = 0v v gs = 4.5v, v ds = 5v v gs = 4.5v, i d = 6.0a reverse transfer capacitance rev.1.0: february 2014 www.aosmd.com page 1 of 5 q gs 1.5 nc q gd 2.7 nc t d(on) 236 ns t r 448 ns t d(off) 9.5 s t f 4.1 s t rr 25 33 ns q rr 9 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on rise time turn-off delaytime v gs =10v, v ds =10v, r l =1.7 , r gen =3 turn-off fall time turn-on delaytime gate source charge gate drain charge body diode reverse recovery time body diode reverse recovery charge i f =6a, di/dt=100a/ s i f =6a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a = 25 c. in any given application depends on the user's specifi c board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r ja is the sum of the thermal impedence from junction t o lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. rev.1.0: february 2014 www.aosmd.com page 1 of 5 downloaded from: http:///
typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics 3v 4.5v 2v 0 10 20 30 40 0.5 1 1.5 2 2.5 3 i d (a) v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds = 5v 20 21 22 23 24 25 26 r ds(on) (m ? ) v = 4.5v v gs = 2.5v v gs = 3.1v v gs = 4.0v 1.0 1.2 1.4 1.6 normalized on-resistance v gs =1.5v v gs = 4.5v i d = 6a 2.5v rev.1.0: february 2014 www.aosmd.com page 1 of 5 i f =-6.5a, di/dt=100a/ s this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 19 20 21 0 4 8 12 16 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs = 4.5v v gs = 4.0v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 1.0 0 25 50 75 100 125 150 175 norma temperature (c) figure 4: on-resistance vs. junction temperature 15 25 35 45 55 1 2 3 4 5 6 7 8 9 10 r ds(on) (m ? ) v gs (volts) figure 5: on-resistance vs. gate-source voltage i d = 6.0a 25 c 125 c rev.1.0: february 2014 www.aosmd.com page 1 of 5 downloaded from: http:///
typical electrical and thermal characteristics 0 2 4 6 8 10 0 3 6 9 12 15 18 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 1 10 100 1000 power (w) 0.1 1 10 100 i d (amps) 100 s 10ms 1ms 100mss 10s dc r ds(on) limited t j(max) =150 c t =25 c 10 s v ds = 10v i d = 6a t j(max) =150 c t a =25 c rev.1.0: february 2014 www.aosmd.com page 1 of 5 i f =-6.5a, di/dt=100a/ s this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0.1 1 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z ? ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance(note e) 0.01 0.1 0.1 1 10 100 v ds (volts) figure 9: maximum forward biased safe operating area (note e) 100mss 10s dc t j(max) =150 c t a =25 c single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =150 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse rev.1.0: february 2014 www.aosmd.com page 1 of 5 downloaded from: http:///
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off rev.1.0: february 2014 www.aosmd.com page 2 of 5 t on t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev.1.0: february 2014 www.aosmd.com page 2 of 5 downloaded from: http:///
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