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  ? 2002-2013 microchip technology inc. ds20001420f-page 1 tc4421/tc4422 features: high peak output current: 9a wide input supply voltage operating range: - 4.5v to 18v high continuous output current: 2a maximum fast rise and fall times: - 30 ns with 4,700 pf load - 180 ns with 47,000 pf load short propagation delays: 30 ns (typical) low supply current: - with logic 1 input C 200 a (typical) - with logic 0 input C 55 a (typical) low output impedance: 1.4 ? (typical) latch-up protected: will withstand 1.5a output reverse current input will withstand negative inputs up to 5v pin-compatible with the tc4420/tc4429 6a mosfet driver space-saving 8-pin 6x5 dfn-s package applications: line drivers for extra heavily-loaded lines pulse generators driving the largest mosfets and igbts local power on/off switch motor and solenoid driver general description: tc4421/tc4422 are high-current buffers/drivers capable of driving large mosfets and igbts. these devices are essentially immune to any form of upset, except direct overvoltage or over-dissipation. they cannot be latched under any conditions within their power and voltage ratings. these parts are not subject to damage or improper operation when up to 5v of ground bounce is present on their ground terminals. they can accept, without damage or logic upset, more than 1a inductive current of either polarity being forced back into their outputs. in addition, all terminals are fully protected against up to 4 kv of electrostatic discharge. the tc4421/tc4422 inputs may be driven directly from either ttl or cmos (3v to 18v). in addition, 300 mv of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. with both surface-mount and pin-through-hole packages and four operating temperature range offerings, the tc4421/tc4422 family of 9a mosfet drivers fits into any application where high gate/line capacitance drive is required. package types ( 1 ) v dd 5 6 7 8 output gnd output tc4421 8-pin pdip/ 12 3 4 v dd input nc gnd 5-pin to-220 v dd gnd input gnd output tc4421 tc4422 ta b i s common to v dd note 1: duplicate pins must both be connected for proper operation. 2: includes electrically isolated exposed thermal pad (ep), see ta bl e 3 - 1 . tc4422 v dd output gnd output soij 8-pin 6x5 dfn-s ( 2 ) v dd input nc gnd v dd output gnd output tc4421 tc4422 v dd output gnd output 1 2 3 4 8 7 6 5 ep 9 9a high-speed mosfet drivers downloaded from: http:///
tc4421/tc4422 ds20001420f-page 2 ? 2002-2013 microchip technology inc. functional block diagram effective input output input gnd v dd 300 mv 4.7v c=25pf inverting non-inverting 200 a tc4421 tc4422 downloaded from: http:///
? 2002-2013 microchip technology inc. ds20001420f-page 3 tc4421/tc4422 1.0 electrical characteristics absolute maximum ratings? supply voltage ..................................................... +20v input voltage .................... (v dd + 0.3v) to (gnd C 5v) input current (v in >v dd )................................... 50 ma package power dissipation (t a ? 70c) 5-pin to-220 .................................................... 1.6w dfn-s .......................................................... note 2 pdip ............................................................ 730 mw soij ............................................................ 750 mw package power dissipation (t a ? 25c) 5-pin to-220 (with heatsink).......................... 12.5w thermal impedances (to case) 5-pin to-220 r ? j-c ...................................... 10c/w ? notice: stresses above those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. dc characteristics electrical specifications: unless otherwise noted, t a = +25c with 4.5v ? v dd ? 18v. parameters sym min typ max units conditions input logic 1 , high-input voltage v ih 2.4 1.8 v logic 0 , low-input voltage v il 1 . 30 . 8v input current i in C10 +10 a 0v ? v in ? v dd output high-output voltage v oh v dd C 0.025 v dc test low-output voltage v ol 0.025 v dc test output resistance, high r oh 1 . 4 ? i out =10ma, v dd = 18v output resistance, low r ol 0 . 91 . 7 ? i out =10ma, v dd = 18v peak output current i pk 9 . 0a v dd =18v continuous output current i dc 2 a 10v ? v dd ? 18v, t a =+25c ( tc4421/tc4422 cat only) ( note 3 ) latch-up protection withstand reverse current i rev > 1.5 a duty cycle ? 2%, t ? 300 sec switching time ( note 1 ) rise time t r 6 07 5n s figure 4-1 , c l =10,000pf fall time t f 6 07 5n s figure 4-1 , c l =10,000pf delay time t d1 3 06 0n s figure 4-1 delay time t d2 3 36 0n s figure 4-1 power supply power supply current i s 0 . 21 . 5 m a v in =3v 5 5 1 5 0 a v in =0v operating input voltage v dd 4.5 18 v note 1: switching times ensured by design. 2: package power dissipation is dependent on the copper pad area on the pcb. 3: tested during characterization, not production tested. downloaded from: http:///
tc4421/tc4422 ds20001420f-page 4 ? 2002-2013 microchip technology inc. dc characteristics (over operating temperature range) electrical specifications: unless otherwise noted, over the operating temperature range with 4.5v ? v dd ? 18v. parameters sym min typ max units conditions input logic 1 , high-input voltage v ih 2.4 v logic 0 , low-input voltage v il 0 . 8v input current i in C10 +10 a 0v ? v in ? v dd output high-output voltage v oh v dd C 0.025 v dc test low-output voltage v ol 0.025 v dc test output resistance, high r oh 2 . 43 . 6 ? i out =10ma, v dd = 18v output resistance, low r ol 1 . 82 . 7 ? i out =10ma, v dd = 18v switching time ( note 1 ) rise time t r 60 120 ns figure 4-1 , c l = 10,000 pf fall time t f 60 120 ns figure 4-1 , c l = 10,000 pf delay time t d1 5 08 0n s figure 4-1 delay time t d2 6 58 0n s figure 4-1 power supply power supply current i s 3m a v in =3v 0 . 2 v in =0v operating input voltage v dd 4.5 18 v note 1: switching times ensured by design. temperature characteristics electrical specifications: unless otherwise noted, all parameters apply with 4.5v ? v dd ? 18v. parameters sym min typ max units conditions temperature ranges specified temperature range (c) t a 0+ 7 0 c specified temperature range (e) t a C40 +85 c specified temperature range (v) t a C40 +125 c maximum junction temperature t j +150 c storage temperature range t a C65 +150 c package thermal resistances thermal resistance, 5l-to-220 ? ja 3 9 . 5 c / w thermal resistance, 8l-6x5 dfn-s ? ja 35.7 c/w typical 4-layer board with vias to ground plane thermal resistance, 8l-pdip ? ja 8 9 . 3 c / w thermal resistance, 8l-soij ? ja 1 1 7 c / w downloaded from: http:///
? 2002-2013 microchip technology inc. ds20001420f-page 5 tc4421/tc4422 2.0 typical performance curves note: unless otherwise indicated, t a = +25c with 4.5v ? v dd ? 18v. figure 2-1: rise time vs. supply voltage. figure 2-2: rise time vs. capacitive load. figure 2-3: rise and fall times vs. temperature. figure 2-4: fall time vs. supply voltage. figure 2-5: fall time vs. capacitive load. figure 2-6: propagation delay vs. supply voltage. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 220200 180 160 140 120 100 8060 40 20 0 4681 01 2 14 16 18 1000 pf 4700 pf 10,000 pf 22,000 pf t rise (nsec) v dd (v) t rise (nsec) 5v 15v 300250 200 150 100 50 0 100 1000 10,000 100,000 10v c load (pf) 9060 40 30 7050 80 -40 0 40 80 120 time (nsec) t a ( c) c load = 10,000 pf v dd = 15v t fall t rise 180160 140 120 100 8060 40 20 0 4 6 8 1012141618 1000 pf 4700 pf 10,000 pf 22,000 pf t fall (nsec) v dd (v) t fall (nsec) 300250 200 150 100 50 0 100 1000 10,000 5v 10v 15v 100,000 c load (pf) 50 81012141618 4 time (nsec) 4540 35 30 25 6 v dd (v) c load = 1000 pf t d1 t d2 downloaded from: http:///
tc4421/tc4422 ds20001420f-page 6 ? 2002-2013 microchip technology inc. note: unless otherwise indicated, t a = +25c with 4.5v ? v dd ? 18v. figure 2-7: supply current vs. capacitive load (v dd =18v). figure 2-8: supply current vs. capacitive load (v dd =12v). figure 2-9: supply current vs. capacitive load (v dd =6v). figure 2-10: supply current vs. frequency (v dd =18v). figure 2-11: supply current vs. frequency (v dd =12v). figure 2-12: supply current vs. frequency (v dd =6v). 220 100 200180 160 140 120 100 8060 40 20 0 100,000 10,000 1000 1.125 mhz 632 khz 200 khz 20 khz 2 mhz 63.2 kh z i supply (ma) c load (pf) v dd = 18v i supply (ma) 180160 140 120 100 60 0 8040 20 1.125 mhz 63.2 khz20 khz 632 khz 200 khz 2 mhz 100 100,000 10,000 1000 v dd = 12v c load (pf) i supply (ma) 100 90 8070 60 50 40 30 20 10 0 20 khz 632 khz 200 khz 2 mhz 63.2 khz 100 100,000 10,000 1000 v dd = 6v c load (pf) fre q uenc y ( khz ) 180100 8060 40 20 0 120 140 160 22,000 pf 470 pf 10,000 pf 0.1 f 4700 pf 10 100 1000 47,000 pf i supply (ma) v dd = 18v i supply (ma) frequency (khz) 180100 8060 40 20 0 120 140 160 470 pf 22,000 pf 4700 pf 10,000 pf 47,000 pf 10 100 1000 v dd = 12v 0.1 f i supply (ma) 47,000 pf 120 4020 0 100 4700 pf 10 fre q uenc y ( khz ) 100 1000 60 80 22,000 pf 470 pf 10,000 pf 10 100 1000 v dd = 6v 0.1 f downloaded from: http:///
? 2002-2013 microchip technology inc. ds20001420f-page 7 tc4421/tc4422 note: unless otherwise indicated, t a = +25c with 4.5v ? v dd ? 18v. figure 2-13: propagation delay vs. input amplitude. figure 2-14: crossover energy vs. supply voltage. figure 2-15: high-state output resistance vs. supply voltage. figure 2-16: propagation delay vs. temperature. figure 2-17: quiescent supply current vs. temperature. figure 2-18: low-state output resistance vs. supply voltage. 120 time (nsec) 110100 9080 70 60 50 40 30 20 10 0 12345678910 input amplitude (v) v dd = 10v c load = 10,000 pf t d1 t d2 10 -7 10 -6 a?sec note: the values on this graph represent the loss seen by the driver during a complete cycle. for the loss in a single transition, divide the stated value by 2. 4681012141618 v dd (v) 10 -8 6 46 81012141618 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 v dd (v) t j = 150 c t j = 25 c r ds(on) ( ) 50 ?40 ?20 0 20 40 60 80 100 120 ?60 time (nsec) 4540 35 30 25 20 t a ( c) t d1 t d2 v dd = 18v c load = 10,000 pf v in = 5v 10 2 -40 -20 0 20 40 60 80 100 120 -60 v dd = 18v input = 1 input = 0 i quiescent ( a) t j ( c) 10 3 r ds(on) ( ) 46 81012141618 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 v dd (v) t j = 150 c t j = 25 c downloaded from: http:///
tc4421/tc4422 ds20001420f-page 8 ? 2002-2013 microchip technology inc. 3.0 pin descriptions the descriptions of the pins are listed in tab l e 3 - 1 . 3.1 supply input (v dd ) the v dd input is the bias supply for the mosfet driver and is rated for 4.5v to 18v with respect to the ground pin. the v dd input should be bypassed to ground with a local ceramic capacitor. the value of the capacitor should be chosen based on the capacitive load that is being driven. a minimum value of 1.0 f is suggested. 3.2 control input (input) the mosfet driver input is a high-impedance, ttl/cmos compatible input. the input also has 300 mv of hysteresis between the high and low thresholds that prevents output glitching even when the rise and fall time of the input signal is very slow. 3.3 cmos push-pull output (output, output ) the mosfet driver output is a low-impedance, cmos, push-pull style output capable of driving a capacitive load with 9.0a peak currents. the mosfet driver output is capable of withstanding 1.5a peak reverse currents of either polarity. 3.4 ground (gnd) the ground pins are the return path for the bias current and for the high peak currents that discharge the load capacitor. the ground pins should be tied into a ground plane or have very short traces to the bias supply source return. 3.5 exposed thermal pad (ep) the exposed thermal pad of the 6x5 dfn-s package is not internally connected to any potential. therefore, this pad can be connected to a ground plane or other copper plane on a printed circuit board to aid in heat removal from the package. table 3-1: pin function table pin no. pdip, soij pin no. 6x5 dfn-s pin no. to-220 symbol description 11 v dd supply input, 4.5v to 18v 2 2 1 input control input, ttl/cmos compatible input 3 3 nc no connection 4 4 2 gnd ground 5 5 4 gnd ground 6 6 5 output/output cmos push-pull output 7 7 output/output cmos push-pull output 883 v dd supply input, 4.5v to 18v 9 ep exposed thermal pad t a b v dd thermal tab is at the v dd potential downloaded from: http:///
? 2002-2013 microchip technology inc. ds20001420f-page 9 tc4421/tc4422 4.0 applications information figure 4-1: switching time test circuits. inverting driver non-inverting driver input t d1 t f t r t d2 input: 100 khz, square wave, t rise = t fall ? 10 nsec output input output t d1 t f t r t d2 +5v 10% 90% 10% 90% 10% 90% +18v 0v 90% 10% 10% 10% 90% +5v +18v 0v 0v 0v 90% 2 67 5 4 18 c l = 10,000 pf 0.1 f 4.7 f input v dd = 18v output 0.1 f note: pinout shown is for the dfn-s, pdip and soij packages. tc4421 tc4422 downloaded from: http:///
tc4421/tc4422 ds20001420f-page 10 ? 2002-2013 microchip technology inc. 5.0 packaging information 5.1 package marking information yywwnnn xxxxxxxxx xxxxxxxxx legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week 01) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e 5-lead to-220 example tc4421cat 1318256 or 8-lead dfn-s (6x5x0.9 mm) example pin 1 nnn pin 1 tc4421 emf 1318 256 or 8-lead pdip (300 mil) example xxxxxxxxxxxxxnnn yyww tc4421 cpa256 or 8-lead soij (5.28 mm) example tc4421 esm 1318256 tc4421 esm ^^ 1318256 3 e or tc4421 cpa^^ 256 1318 3 e tc4421 cat ^^ 1318256 3 e tc4421 emf ^^ 1318 256 3 e downloaded from: http:///
? 2002-2013 microchip technology inc. ds20001420f-page 11 tc4421/tc4422 
  
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? 2002-2013 microchip technology inc. ds20001420f-page 15 tc4421/tc4422 noe: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging downloaded from: http:///
tc4421/tc4422 ds20001420f-page 16 ? 2002-2013 microchip technology inc. noe: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging downloaded from: http:///
? 2002-2013 microchip technology inc. ds20001420f-page 17 tc4421/tc4422 noe: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging downloaded from: http:///
tc4421/tc4422 ds20001420f-page 18 ? 2002-2013 microchip technology inc. notes: downloaded from: http:///
? 2002-2013 microchip technology inc. ds20001420f-page 19 tc4421/tc4422 appendix a: revision history revision f (august 2013) the following is the list of modifications: 1. updated package type for 8-pin 6x5 dfn-s in package types (1) . 2. updated the values in temperature characteristics . 3. updated the markings in section 5.0, packaging information . 4. replaced all references to dfn and soic with dfn-s and soij, respectively. revision e (december 2012) added a note to each package outline drawing. downloaded from: http:///
tc4421/tc4422 ds20001420f-page 20 ? 2002-2013 microchip technology inc. notes: downloaded from: http:///
? 2002-2013 microchip technology inc. ds20001420f-page 21 tc4421/tc4422 product identification system to order or obtain information, e. g., on pricing or delivery, refer to the factory or the listed sales office . device: tc4421: 9a high-speed mosfet driver, inverting tc4422: 9a high-speed mosfet driver, non-inverting temperature range: c = 0c to +70c (pdip and to-220 only) e = -40c to +85c v = -40c to +125c package: at = to-220, 5-lead (c-temp only) mf = dual, flat, no-lead (6x5 mm body), 8-lead mf713 = dual, flat, no-lead (6x5 mm body), 8-lead (tape and reel) pa = plastic dip (300 mil body), 8-lead sm = plastic soij (208 mil body), 8-lead sm713 = plastic soij (208 mil body), 8-lead (tape and reel) pb free: g = lead-free device =blank part no. x xx package temperature range device examples: a) tc4421cat: 9a high-speed inverting mosfet driver, to-220 package, 0c to +70c. b) tc4421esmg: 9a high-speed inverting mosfet driver, pb free soij package, -40c to +85c. c) tc4421vmf: 9a high-speed inverting mosfet driver, dfn-s package, -40c to +125c. a) tc4422vpa: 9a high-speed non-inverting mosfet driver, pdip package, -40c to +125c. b) tc4422epa: 9a high-speed non-inverting mosfet driver, pdip package, -40c to +85c. c) tc4422emf: 9a high-speed inverting mosfet driver, dfn-s package, -40c to +85c. xxx tape & reel x pb free downloaded from: http:///
tc4421/tc4422 ds20001420f-page 22 ? 2002-2013 microchip technology inc. notes: downloaded from: http:///
? 2002-2013 microchip technology inc. ds20001420f-page 23 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyers risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, flashflex, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic, sst, sst logo, superflash and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mtp, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. analog-for-the-digital age, app lication maestro, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mpf, mplab certified logo, mplib, mplink, mtouch, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, sqi, serial quad i/o, total endurance, tsharc, uniwindriver, wiperlock, zena and z-scale are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. gestic and ulpp are registered trademarks of microchip technology germany ii gmbh & co. kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2002-2013, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 978-1-62077-421-2 note the following details of the code protection feature on microchip devices: microchip products meet the specification cont ained in their particular microchip data sheet. microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip products in a manner outside the operating specif ications contained in microchips data sheets. most likely, the person doing so is engaged in theft of intellectual property. microchip is willing to work with the customer who is concerned about the integrity of their code. neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as unbreakable. code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchips code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory an d analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem certified by dnv == iso/ts 16949 == downloaded from: http:///
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