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 HGTP14N40F3VL / HGT1S14N40F3VLS
January 2002
HGTP14N40F3VL / HGT1S14N40F3VLS
330mJ, 400V, N-Channel Ignition IGBT
General Description
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the drain and the gate and ESD protection for the logic level gate. Some specifications are unique to this automotive application and are intended to assure device survival in this harsh environment. Formerly Developmental Type 49023
Applications
* Automotive Ignition Coil Driver Circuits * Coil-On Plug Applications
Features
* * * * * Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection Max TJ = 175oC SCIS Energy = 330mJ at TJ = 25oC
Package
JEDEC TO-263AB D -Pak JEDEC TO-220AB E
Symbol
C G
R1 GATE
COLLECTOR
G E COLLECTOR (FLANGE) COLLECTOR (FLANGE)
EMITTER
Device Maximum Ratings TA = 25C unless otherwise noted
Symbol BVCES BVCGR ESCIS25 IC25 IC90 VGES VGEM ICO ICO PD TJ, TSTG TL Tpkg ESD Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Collector to Gate Breakdown Voltage (RGE = 10K) Drain to Source Avalanche Energy at L = 2.3mHy, TC = 25C Collector Current Continuous, at TC = 25C, VGE = 4.5V Collector Current Continuous, at TC = 90C, VGE = 4.5V Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed L = 2.3mHy, TC = 25C L = 2.3mHy, TC = 150C Power Dissipation Total TC = 25C Power Dissipation Derating TC > 25C Operating and Storage Junction Temperature Range Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) Max Lead Temp for Soldering (Package Body for 10s) Electrostatic Discharge Voltage at 100pF, 1500 Ratings 420 420 330 38 35 10 12 17 12 262 1.75 -40 to 175 300 260 6 Units V V mJ A A V V A A W W/C C C C KV
(c)2002 Fairchild Semiconductor Corporation
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002
HGTP14N40F3VL / HGT1S14N40F3VLS
Package Marking and Ordering Information
Device Marking 14N40FVL 14N40FVL 14N40FVL Device HGT1S14N40F3VLT HGT1S14N40F3VLS HGTP14N40F3VL Package TO-263AB TO-263AB TO-220AB Reel Size 24mm Tube Tube Tape Width 24mm N/A N/A Quantity 800 units 50 units 50 units
Electrical Characteristics TA = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
BVCES Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0 IC = 10A, RG = 0 IC = 1mA IGES = 1mA VCE = 250V, VGE = 10V TC = 25C TC = 150C IGES R1 Gate to Emitter Leakage Current Series Gate Resistance TC = 25C TC = 150C TC = 25C TC = -40C BVCE(CL) BVECS BVGES ICES Collector to Emitter Clamp Breakdown Voltage Emitter to Collector Breakdown Voltage Gate to Emitter Breakdown Voltage Collector to Emitter Leakage Current TC = 150C TC = 25C 345 350 355 350 24 12 370 375 380 385 1000 415 420 425 430 50 250 10 V V V V V V A A A
On State Characteristics
VCE(SAT) VGE(TH) Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage IC = 10A, VGE = 4.5V IC = 1mA, VCE = VGE TC = 25C TC = 150C TC = 25C TC = 150C 1.0 0.5 1.3 1.4 2.0 2.3 2.0 V V V V
Switching Characteristics
td(OFF)l + tf(OFF)l SCIS Current Turn-Off Time-Inductive Load IC = 6.5A, RG = 25, L = 550Hy, VCL = 320V, VGE = 5V, TC = 25C L = 2.3mHy, TC = 25C VGE = 5V, See T = 150C C Fig. 1 & 2 12 16 s
Self Clamped Inductive Switching
17 12
-
-
A A
Thermal Characteristics
RJC Thermal Resistance Junction to Case 0.57 C/W
(c)2002 Fairchild Semiconductor Corporation
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002
HGTP14N40F3VL / HGT1S14N40F3VLS
Typical Performance Curves (Continued)
ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 80 RG = 1k, VGE = 5V, VDD = 14V 80 RG = 1k, VGE = 5V, VDD = 14V
60
60
40 TJ = 25C TJ = 150C 20
40
TJ = 25C 20 TJ = 150C SCIS Curves valid for Vclamp Voltages of <430V 0 0 2 4 6 8 10
SCIS Curves valid for Vclamp Voltages of <430V 0 0 20 40 60 80 100 120 140 160 180 200
tCLP, TIME IN CLAMP (S)
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching Current vs Time
VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.25 ICE = 6A 1.20 VGE = 3.7V 1.15 1.10 VGE = 8.0V 1.05 VGE = 4.5V 1.00 VGE = 5.0V 0.95 0.90 -50 VGE = 4.0V
Figure 2. Self Clamped Inductive Switching Current vs Inductance
VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.45 VGE = 3.7V 1.40 VGE = 4.0V 1.35 VGE = 4.5V 1.30 1.25 1.20 1.15 1.10 VGE = 8.0V VGE = 5.0V ICE = 10A
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A) 40 VGE = 8.0V VGE = 5.0V 30 VGE = 4.5V VGE = 4.0V VGE = 3.7V 20
Figure 4. Collector to Emitter On-State Voltage vs Junction Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A) 40 VGE = 8.0V VGE = 5.0V 30 VGE = 4.5V VGE = 4.0V VGE = 3.7V 20
10
10
TJ = - 40C 0 0 1.0 2.0 3.0 4.0
TJ = 25C 0 0 1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter Current vs Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter Current vs Collector to Emitter On-State Voltage
(c)2002 Fairchild Semiconductor Corporation
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002
HGTP14N40F3VL / HGT1S14N40F3VLS
Typical Performance Curves (Continued)
40 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 8.0V VGE = 5.0V 30 VGE = 4.5V VGE = 4.0V VGE = 3.7V 20 ICE, COLLECTOR TO EMITTER CURRENT (A) 30 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250s
25
20
15 TJ = 25C 10 TJ = 175C 5 TJ = -40C 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGE, GATE TO EMITTER VOLTAGE (V)
10
TJ = 175C 0 0 1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter Current vs Collector to Emitter On-State Voltage
40 VGE = 4.5V ICE, DC COLLECTOR CURRENT (A) VTH, THRESHOLD VOLTAGE (V) 2.0 2.2
Figure 8. Transfer Characteristics
VCE = VGE ICE = 1mA
30
1.8
20
1.6
1.4
10
1.2
0 25 50 75 100 125 150 175
1.0 -50 -25 0 25 50 75 100 125 150 175
TC CASE TEMPERATURE (C)
TJ JUNCTION TEMPERATURE (C)
Figure 9. DC Collector Current vs Case Temperature
10000 ICES, LEAKAGE CURRENT (A)
Figure 10. Threshold Voltage vs Junction Temperature
14 ICE = 6.5A, VGE = 5V, RG = 1K
VECS = 24V toffL, SWITCHING TIME (S) 1000 12
100 VCES = 350V 10 VCES = 250V 1.0
10
Inductive tOFF
8
0.1 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C)
6 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 11. Leakage Current vs Junction Temperature
Figure 12. Switching Time vs Junction Temperature
(c)2002 Fairchild Semiconductor Corporation
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002
HGTP14N40F3VL / HGT1S14N40F3VLS
Test Circuit and Waveforms
1500 FREQUENCY = 1 MHz 1250 C, CAPACITANCE (pF) VGE, GATE TO EMITTER VOLTAGE (V) 8 IG(REF) = 1mA, RL = 1.25, TJ = 25C
6 VCE = 12V 4
1000
CIES
750
500 CRES 250 COES
2 VCE = 6V
0 0 5 10 15 20 25
0 0 5 10 15 20 25 30
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
Figure 13. Capacitance vs Collector to Emitter Voltage
380 ICER = 10mA BVCER, BREAKDOWN VOLTAGE (V) 375
Figure 14. Gate Charge
TJ = - 40C 370 TJ = 25C 365 TJ = 175C 360
355 10 100 RG, SERIES GATE RESISTANCE (k) 1000 5000 10000
Figure 15. Breakdown Voltage vs Series Gate Resistance
ZthJC, NORMALIZED THERMAL RESPONSE
100
0.5 0.2 0.1
10-1
0.05
t1
0.02 0.01 10-2 SINGLE PULSE
PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC
10-4 10-3 10-2 10-1 100
10-3
10-5
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. Normalized Transient Thermal Impedance
(c)2002 Fairchild Semiconductor Corporation
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002
HGTP14N40F3VL / HGT1S14N40F3VLS
L VCE R or L C RG 5V E E G + VCE LOAD
C RG DUT G
PULSE GEN
DUT
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VCE tP L
BVCES / R
VCE IAS VDD
+
C
VARY tP TO OBTAIN REQUIRED PEAK IAS VGE RG
G
DUT E
VDD -
tP 0V
IAS 0.01
0 tAV
Figure 19. Unclamped Energy Test Circuit
Figure 20. Unclamped Energy Waveforms
(c)2002 Fairchild Semiconductor Corporation
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4


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