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  low frequency high voltahe pow Datasheet PDF File

For low frequency high voltahe pow Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

    550D08 550D107X9015S2 550D127X9015S2 550D157X9015S2 550D826X9015S2 550D227X0006S2 550D825X0035R2 550D825X0050R2 550D187X

Vishay Siliconix
Part No. 550D08 550D107X9015S2 550D127X9015S2 550D157X9015S2 550D826X9015S2 550D227X0006S2 550D825X0035R2 550D825X0050R2 550D187X0006R2 550D566X0015R2 550D566X0020S2 550D565X0050R2 550D127X0010R2 550D276X0020R2 550D276X0035S2 550D685X0050R2 550D157X0006R2 550D476X9020R2 550D476X9035S2 550D476X0020R2 550D476X0035S2 550D826X0010R2 550D157X9006R2 550D157X9010S2 550D277X9006S2 550D685X9050R2 550D187X9006R2 550D126X9050R2 550D126X9035R2 550D126X0050R2 550D126X0035R2 550D107X9020S2 550D107X9010R2 550D107X0020S2 550D107X0015S2 550D107X0010R2 550D106X9050R2 550D106X9035R2 550D106X0050R2 550D106X0035R2 550D186X9050R2 550D825X9050R2 550D226X9050S2 550D565X9050R2 550D156X9050R2 550D156X0035R2 550D826X0015S2 550D826X0020S2 550D187X9010S2 550D227X9010S2 550D336X0020R2 550D336X0035S2 550D336X9020R2 550D336X9035S2 550D337X0006S2 550D337X9006S2 550D226X9035R2
Description Solid-Electrolyte TANTALEX㈢ Capacitors for high frequency power Supplies
Solid-Electrolyte TANTALEX? Capacitors for high frequency power Supplies
Solid-Electrolyte TANTALEX庐 Capacitors for high frequency power Supplies
Solid-Electrolyte TANTALEX垄莽 Capacitors for high frequency power Supplies

File Size 145.53K  /  9 Page

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    2SA1483 E000536

Toshiba Semiconductor
Part No. 2SA1483 E000536
Description From old datasheet system
high frequency AMPLIFIER AIDEO AMPLIFIER APPLICATIONS high SPEED SWITCHING APPLICATIONS
TRANSISTOR (high frequency AMPLIFIER, VIDEO AMPLIFIER, high SPEED SWITCHING APPLICATIONS)

File Size 172.64K  /  3 Page

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    STTH3003 5374 STTH3003CW

STMicroelectronics N.V.
ST Microelectronics
Part No. STTH3003 5374 STTH3003CW
Description high frequency SECONDARY RECTIFIER 高频二次整流
From old datasheet system
high frequency SECONDARY RECTIFIER

File Size 54.31K  /  5 Page

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    STTH30R03 7630 STTH30R03CG STTH30R03CW STTH30R03CG-TR

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. STTH30R03 7630 STTH30R03CG STTH30R03CW STTH30R03CG-TR
Description high frequency SECONDARY RECTIFIER
From old datasheet system
high frequency SECONDARY RECTIFIER 高频二次整流

File Size 77.56K  /  6 Page

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    UPB1005GS UPB1005GS-E1 UPB1003GS UPB1004GS UPC2753GR UPC2756T UPC2756TB

NEC[NEC]
Part No. UPB1005GS UPB1005GS-E1 UPB1003GS UPB1004GS UPC2753GR UPC2756T UPC2756TB
Description REFERENCE frequency 16.368 MHz, 2ND IF frequency 4.092 MHz RF/IF frequency DOWN-CONVERTER PLL frequency SYNTHESIZER IC FOR GPS RECEIVER

File Size 161.58K  /  20 Page

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    2SC3803 E000885

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. 2SC3803 E000885
Description NPN EPITAXIAL TYPE (high frequency / VIDEO AMPLIFIER/ high SPEED SWITCHING APPLICATIONS)
NPN EPITAXIAL TYPE (high frequency , VIDEO AMPLIFIER, high SPEED SWITCHING APPLICATIONS)
high frequency AMPLIFIER APPLICATIONS VODEO AMPLIFIER APPLICATIONS high SPEED SWITCHING APPLICATIONS
From old datasheet system

File Size 174.72K  /  3 Page

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    DPPS16D56K-F DPPS10D12K-F DPPS10D15K-F DPPS10D18K-F DPPS10D1K-F DPPS10D22K-F DPPS10D27K-F DPPS10D33K-F DPPS10D39K-F DPPS

Cornell Dubilier Electr...
http://
Cornell Dubilier Electronics
Part No. DPPS16D56K-F DPPS10D12K-F DPPS10D15K-F DPPS10D18K-F DPPS10D1K-F DPPS10D22K-F DPPS10D27K-F DPPS10D33K-F DPPS10D39K-F DPPS10D47K-F DPPS10D56K-F DPPS10D68K-F DPPS10D82K-F DPPS10S12K-F DPPS10S15K-F DPPS10S18K-F DPPS10S1K-F DPPS10S22K-F DPPS10S27K-F DPPS10S33K-F DPPS16D12K-F DPPS16D15K-F DPPS16D18K-F DPPS16D1K-F DPPS16D22K-F DPPS16S18K-F DPPS16D82K-F DPPS20D82K-F DPPS20D12K-F DPPS20S12K-F DPPS16D27K-F DPPS16D33K-F DPPS16D39K-F DPPS16D47K-F DPPS20D68K-F DPPS20D39K-F DPPS20S15K-F DPPS20S1K-F
Description high Voltage, high frequency, Ultra high Peak Currents

File Size 214.93K  /  2 Page

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    2SA1683 2SC4414

SANYO[Sanyo Semicon Device]
Part No. 2SA1683 2SC4414
Description high-frequency General-Purpose Amp/ high-frequency power Amp Applications
high-frequency General-Purpose Amp, high-frequency power Amp Applications

File Size 115.49K  /  4 Page

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    ADP3806 ADP3806JRU ADP3806JRU-125 ADP3806JRU-126 ADP3806JRU-12.5 ADP3806JRU-12.6

AD[Analog Devices]
ANALOG DEVICES INC
Part No. ADP3806 ADP3806JRU ADP3806JRU-125 ADP3806JRU-126 ADP3806JRU-12.5 ADP3806JRU-12.6
Description 0.3-25V; high frequency switch mode Li-Ion battery charger. For portable computers, fast chargers
Analog IC
high-frequency Switch Mode Li-Ion Battery Charger
2-CHANNEL powER SUPPLY SUPPORT CKT, PDSO24

File Size 195.96K  /  12 Page

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    CREE powER
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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