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MP04943 F512A DR506 UFR603 1A475 GL9711 15KPA 2SC1346
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  unclamped Datasheet PDF File

For unclamped Found Datasheets File :: 13381    Search Time::0.937ms    
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    FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75333S3S HUF75333G3 HUF75333P3 HUF75333S3 HUF75333S3ST
OCR Text ...S SAFE OPERATING AREA FIGURE 6. unclamped INDUCTIVE SWITCHING CAPABILITY 150 VGS = 20V VGS = 10V ID, DRAIN CURRENT (A) VGS = 7V VGS = 6V ID, DRAIN CURRENT (A) 120 150 120 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V -...
Description 55V N-Channel UltraFET Power MOSFET
66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs

File Size 280.56K  /  10 Page

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    FDS2572 FDS2572NL

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS2572 FDS2572NL
OCR Text ...SOURCE VOLTAGE (V) Figure 5. unclamped Inductive Switching Capability 30 VGS = 10V NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID, DRAIN CURRENT (A) VGS = 6V 20 VGS = 5V 2.0 2.5 Figure 6. Transfer Characteristics PULSE DURATION = 80s...
Description 150V N-Channel UltraFET Trench MOSFET
150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET

File Size 271.78K  /  12 Page

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    FDS2582

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FDS2582
OCR Text ... AN7514 and AN7515 Figure 6. unclamped Inductive Switching Capability 30 30 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A) TA = 25oC VGS = 10V 25 ID , DRAIN CURRENT (A) 25 20 TJ = 150oC 15 TJ =...
Description Discrete Commercial N-Channel UltraFET TRENCH MOSFET, 150V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package
12 AMP MINIATURE POWER RELAY
N-Channel PowerTrench MOSFET 150V/ 4.1A/ 66m
N-Channel PowerTrench MOSFET 150V, 4.1A, 66mз
N-Channel PowerTrench MOSFET 150V, 4.1A, 66m?/a>

File Size 215.08K  /  11 Page

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    Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HRFZ44N
OCR Text ...S SAFE OPERATING AREA FIGURE 6. unclamped INDUCTIVE SWITCHING CAPABILITY 100 ID, DRAIN CURRENT (A) VGS = 6V 60 ID, DRAIN CURRENT (A) 80 VGS = 20V VGS = 10V VGS = 8V VGS = 7V 100 PULSE DURATION = 80s DUTY CYCLE = 0.5% MA...
Description 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET 49 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 191.49K  /  10 Page

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    INTERSIL[Intersil Corporation]
Part No. HAF70009
OCR Text ...S SAFE OPERATING AREA FIGURE 6. unclamped INDUCTIVE SWITCHING CAPABILITY 100 VGS = 6V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80 VGS ==20V VGS 20V VGS ==10V VGS 10V VGS 7V VGS ==7V 100 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VD...
Description 56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFET
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET

File Size 107.10K  /  10 Page

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    MBRB3030CTLG MBRB3030CTL

ON Semiconductor
Part No. MBRB3030CTLG MBRB3030CTL
OCR Text ...d VR, TJ = 25C) Reverse Energy, unclamped Inductive Surge (TJ = 25C, L = 3.0 mH) Symbol VRRM VRWM VR IO IFRM Value 30 Unit V MARKING DIAGRAM 15 30 30 A A AY WW B3030CTLG AKA IFSM 300 A IRRM Tstg TJ dV/dt EAS 2.0 -...
Description SWITCHMODE Power Rectifier

File Size 83.68K  /  8 Page

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    HUF76112SK8 FN4834

INTERSIL[Intersil Corporation]
Part No. HUF76112SK8 FN4834
OCR Text ...es AN9321 and AN9322. FIGURE 6. unclamped INDUCTIVE SWITCHING CAPABILITY 25 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A) 25 VGS = 10V 20 VGS = 5V VGS = 4.5V 15 VGS = 4V VGS = 3.5V 10 VGS = 3V 5 TA = 25oC...
Description From old datasheet system
7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET

File Size 183.81K  /  12 Page

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    FDP887008 FDP8870

Fairchild Semiconductor
Part No. FDP887008 FDP8870
OCR Text ... AN7514 and AN7515 Figure 6. unclamped Inductive Switching Capability 160 160 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 120 TJ = 175oC 80 TJ = 25oC 40 TJ = -55oC 0 1.5 VGS = ...
Description N-Channel PowerTrench? MOSFET
N-Channel PowerTrench垄莽 MOSFET

File Size 397.60K  /  10 Page

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    STL60NH3LL07

STMicroelectronics
Part No. STL60NH3LL07
OCR Text ...e pulse safe operating area for unclamped inductive loads under the following conditions: PD(AVE) =0.5*(1.3*BVDSS *IAV ) EAS(AR) =PD(AVE) *tAV Where: IAV is the allowable current in avalanche PD(AVE) is the average power dissipation in aval...
Description N-channel 30 V - 0.0065 楼? - 30 A - PowerFLAT垄芒 (6x5) ultra low gate charge STripFET垄芒 Power MOSFET
N-channel 30 V - 0.0065 Ω - 30 A - PowerFLAT?/a> (6x5) ultra low gate charge STripFET?/a> Power MOSFET
N-channel 30 V - 0.0065 Ω - 30 A - PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET

File Size 332.59K  /  13 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQD45N03L FQD45N03LTF
OCR Text ...Time Fall Time Turn-Off Time unclamped Inductive Switching tav Avalanche Time ID = 2.7A, L = 3mH 180 s Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD =...
Description N-Channel Logic Level PWM Optimized Power MOSFET

File Size 215.60K  /  11 Page

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For unclamped Found Datasheets File :: 13381    Search Time::0.937ms    
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