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For unclamped Found Datasheets File :: 15572    Search Time::1.188ms    
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    MBRB3030CTLG MBRB3030CTL

ON Semiconductor
Part No. MBRB3030CTLG MBRB3030CTL
OCR Text ...d VR, TJ = 25C) Reverse Energy, unclamped Inductive Surge (TJ = 25C, L = 3.0 mH) Symbol VRRM VRWM VR IO IFRM Value 30 Unit V MARKING DIAGRAM 15 30 30 A A AY WW B3030CTLG AKA IFSM 300 A IRRM Tstg TJ dV/dt EAS 2.0 -...
Description SWITCHMODE Power Rectifier

File Size 83.68K  /  8 Page

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    STL60NH3LL07

STMicroelectronics
Part No. STL60NH3LL07
OCR Text ...e pulse safe operating area for unclamped inductive loads under the following conditions: PD(AVE) =0.5*(1.3*BVDSS *IAV ) EAS(AR) =PD(AVE) *tAV Where: IAV is the allowable current in avalanche PD(AVE) is the average power dissipation in aval...
Description N-channel 30 V - 0.0065 楼? - 30 A - PowerFLAT垄芒 (6x5) ultra low gate charge STripFET垄芒 Power MOSFET
N-channel 30 V - 0.0065 Ω - 30 A - PowerFLAT?/a> (6x5) ultra low gate charge STripFET?/a> Power MOSFET
N-channel 30 V - 0.0065 Ω - 30 A - PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET

File Size 332.59K  /  13 Page

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    RFG45N0602 RFP45N06 RFG45N06 RF1S45N06SM

Fairchild Semiconductor
Part No. RFG45N0602 RFP45N06 RFG45N06 RF1S45N06SM
OCR Text ...es AN9321 and AN9322. FIGURE 6. unclamped INDUCTIVE SWITCHING FIGURE 7. SATURATION CHARACTERISTICS IDS(ON) , DRAIN TO SOURCE CURRENT (A) 125 100 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 10 PULSE DURATION = 80s DUTY CYCLE = 0....
Description 45A, 60V, 0.028 Ohm, N-Channel Power

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    FDP8874 FDP887408

Fairchild Semiconductor
Part No. FDP8874 FDP887408
OCR Text ... AN7514 and AN7515 Figure 6. unclamped Inductive Switching Capability 160 160 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 120 VGS = 5V VGS = 4V 120 VGS = 10V 80 80 TJ = 40 T...
Description N-Channel PowerTrench? MOSFET
N-Channel PowerTrench垄莽 MOSFET

File Size 403.76K  /  10 Page

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    IPW60R070C6

Infineon Technologies AG
Part No. IPW60R070C6
OCR Text ... ton tr tf Table 17 unclamped inductive load test circuit and waveform unclamped inductive waveform V(BR)DS VD unclamped inductive load test circuit ID VDS VDS ID VDS Table 18 Test circuit and waveform for ...
Description Metal Oxide Semiconductor Field Effect Transistor

File Size 1,563.38K  /  13 Page

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    PSMN030-150B10 PSMN030-150B

NXP Semiconductors N.V.
Part No. PSMN030-150B10 PSMN030-150B
OCR Text ... = 25 C; ID = 35 A; Vsup 50 V; unclamped; RGS = 50 ; tp = 100 s Vsup 50 V; VGS = 10 V; Tj(init) = 25 C; RGS = 50 ; unclamped Tmb = 25 C Tmb = 100 C pulsed; Tmb = 25 C Tmb = 25 C Conditions Tj 25 C; Tj 175 C Tj 175 C; Tj 25 C; RGS = 20...
Description N-channel TrenchMOS SiliconMAX standard level FET

File Size 155.52K  /  12 Page

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    PSMN057-200P11

NXP Semiconductors
Part No. PSMN057-200P11
OCR Text ...; ID = 35 A; energy Vsup 50 V; unclamped; tp = 100 s; RGS = 50 non-repetitive avalanche current Vsup 50 V; VGS = 10 V; Tj(init) = 25 C; RGS = 50 ; unclamped IAS - 35 A 100 Pder (%) 80 003aae614 100 ID (%) 80 003aa...
Description N-channel TrenchMOS SiliconMAX standard level FET

File Size 162.42K  /  13 Page

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    RFP50N05L04 RFP50N05LNL

FAIRCHILD SEMICONDUCTOR CORP
Austin Semiconductor
Intersil, Corp.
Part No. RFP50N05L04 RFP50N05LNL
OCR Text ...AFE OPERATING AREA FIGURE 4. unclamped INDUCTIVE SWITCHING SAFE OPERATING AREA ID(ON), DRAIN TO SOURCE CURRENT (A) 140 IDS, DRAIN TO SOURCE CURRENT (A) 120 100 80 60 40 20 VGS = 2V 0 0 1.5 3.0 4.5 6.0 7.5 VDS, DRAIN TO SOURCE VOLTA...
Description 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs 50 A, 50 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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    FDS568208 FDS5682

Fairchild Semiconductor
Part No. FDS568208 FDS5682
OCR Text ... AN7514 and AN7515 Figure 5. unclamped Inductive Switching Capability 25 VGS = 10V ID, DRAIN CURRENT (A) 20 VGS = 5V rDS(ON), DRAIN TO SOURCE ON RESISTANCE (m) 60 80 Figure 6. Transfer Characteristics PULSE DURATION = 80s DUTY CYC...
Description N-Channel PowerTrench® MOSFET 60V, 7.5A, 21mOhms
N-Channel PowerTrench MOSFET 60V, 7.5A, 21m ohm

File Size 429.10K  /  12 Page

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    STK80007 STK800

STMicroelectronics
Part No. STK80007 STK800
OCR Text ...e pulse safe operating area for unclamped inductive loads, under the following conditions: PD(AVE) =0.5*(1.3*BVDSS *IAV) EAS(AR) =PD(AVE) *tAV Where: IAV is the allowable current in avalanche PD(AVE) is the average power dissipation in aval...
Description N-channel 30V - 0.006ヘ - 20A - PolarPAK㈢ STripFET⑩ Power MOSFET
N-channel 30V - 0.006Ω - 20A - PolarPAK? STripFET Power MOSFET

File Size 473.17K  /  16 Page

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