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640v Datasheet PDF File

For 640v Found Datasheets File :: 379 Search Time::1.719ms
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				STMICROELECTRONICS[STMicroelectronics]
Part No.	STP4NC80ZFP STP4NC80Z STB4NC80Z STB4NC80Z-1
OCR Text	...e test circuit, Figure 3) VDD = 640v, ID = 4A, VGS = 10V Min. Typ. 27 10 27 7 10 36.5 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 640v, ID ...
Description	N沟道800V 2.4ohm - 4A条TO-220/FP/D2PAK/I2PAK齐保护的PowerMESH⑩三MOSFET N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
File Size	541.27K / 14 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT8014L2LL-03
OCR Text	...voltage drain current (v ds = 640v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5ma) 050-7103 rev a 12-2003 maximum ratings all ratings: t c = 25c...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	85.66K / 5 Page	View it Online	Download Datasheet

				STMicroelectronics http://
Part No.	STP10NK80Z06 STP10NK80Z STP10NK80ZFP STW10NK80Z
OCR Text	...ain charge VGS=0, VDS =0V to 640v VDD=640v, ID = 9A VGS =10V (see Figure 19) 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS in...
Description	N-channel 800V - 0.78ヘ - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET N-channel 800V - 0.78惟 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET
File Size	421.72K / 15 Page	View it Online	Download Datasheet

				Unisonic Technologies
Part No.	8N80
OCR Text	...urce Leakage Current IDSS A VDS=640v, TC=125C 100 Gate- Source Leakage Current IGSS VGS=30V, VDS=0V 100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250A 3.0 5.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V,...
Description	800V N-CHANNEL MOSFET
File Size	203.16K / 5 Page	View it Online	Download Datasheet

				STMICROELECTRONICS
Part No.	STW10NK80Z
OCR Text	...pacitance v gs =0, v ds =0v to 640v 105 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =640v, i d = 9a v gs =10v (see figure 19) 72 12.5 37 nc nc nc stp10nk80zfp - stp10nk80z - stw10nk80z electrical chara...
Description	9 A, 800 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
File Size	425.90K / 15 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	P10NK80Z
OCR Text	...t Capacitance VGS=0, VDS =0V to 640v Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=640v, ID = 9A VGS =10V (see Figure 19) Table 6. Symbol td(on) tr td(off) tf tr(Voff) tf tc Switching times Parameter Turn-on Delay Time ...
Description	Search --To STP10NK80Z
File Size	367.86K / 14 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	APT31N80JC3
OCR Text	...ain-Source Voltage slope (VDS = 640v, ID = 31A, TJ = 125C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/C C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 670 STATIC ELECTRICAL CHARACTER...
Description	Super Junction MOSFET
File Size	248.14K / 5 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	APT34N80LC3 APT34N80B2C3
OCR Text	...ain-Source Voltage slope (VDS = 640v, ID = 34A, TJ = 125C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/C C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 670 STATIC ELECTRICAL CHARACTER...
Description	Super Junction MOSFET
File Size	249.45K / 5 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	W12NK80Z
OCR Text	...tance v gs = 0v, v ds = 0v to 640v 100 pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 400 v, i d = 5.25 a r g = 4.7 w v gs = 10 v (resistive load see, figure 3) 30 18 ns ns q ...
Description	Search --To STW12NK80Z
File Size	220.05K / 9 Page	View it Online	Download Datasheet

				Unisonic Technologies
Part No.	4N80 4N80L-TA3-T 4N80L-TF1-T 4N80G-TA3-T 4N80G-TF1-T 4N80G-TF3-T 4N80L-TF3-T
OCR Text	...Source Leakage Current IDSS VDS=640v, TC=125C Forward VDS=0V ,VGS=30V Gate-Source Leakage Current IGSS Reverse VDS=0V ,VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250A Drain-Source On-State Resistance RDS(ON) VGS=...
Description	4.0 Amps, 800 Volts N-CHANNEL POWER MOSFET
File Size	157.79K / 6 Page	View it Online	Download Datasheet

For 640v Found Datasheets File :: 379 Search Time::1.719ms
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