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INFINEON[Infineon Technologies AG]
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| Part No. |
SPW17N80C2
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| OCR Text |
....6W, T j=125C
-
ns
VDD=640v, ID=17A
-
9 42 83 6
107 -
nC
VDD=640v, ID=17A, VGS=0 to 10V
V(plateau) VDD=640v, ID=17A
V
1C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is ... |
| Description |
Cool MOS Power Transistor
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| File Size |
135.45K /
11 Page |
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it Online |
Download Datasheet
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Infineon Technologies
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| Part No. |
08N80C3
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| OCR Text |
...plateau voltage Qgs Qgd Qg
VDD=640v, ID=8A, VGS=0 to 10V VDD=640v, ID=8A
SPP08N80C3 SPA08N80C3
Symbol gfs Ciss Coss Crss
Conditions min.
VDS2*ID*R DS(on)max, ID=5.1A VGS=0V, VDS=25V, f=1MHz
Values typ. 5.5 1100 500 25 31.8 70 ... |
| Description |
Search --To SPP08N80C3
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| File Size |
290.80K /
12 Page |
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it Online |
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Infineon
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| Part No. |
SPI08N80C3
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| OCR Text |
...lateau voltage Qgs Qgd Qg
V DD=640v, ID=8A, V GS=0 to 10V V DD=640v, ID=8A
SPP08N80C3, SPI08N80C3 SPA08N80C3
Symbol g fs Ciss Coss Crss
Conditions min.
V DS2*I D*RDS(on)max, ID=5.1A V GS=0V, V DS=25V, f=1MHz
Values typ. 5.5 11... |
| Description |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
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| File Size |
267.87K /
13 Page |
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it Online |
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Xian Semipower Electronic Technology Co., Ltd.
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| Part No. |
SWF3N80A SW3N80A SWD3N80A
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| OCR Text |
...=0v - - 1 ua v ds =640v, t c =125 o c - - 20 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na v gs = - 30v, v ds =0v - - - 100 na gate to source leakage... |
| Description |
N-channel MOSFET
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| File Size |
909.00K /
7 Page |
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it Online |
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Price and Availability
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