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TOSHIBA
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Part No. |
GT15J321
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Description |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power switching Applications fast switching Applications
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File Size |
175.02K /
7 Page |
View
it Online |
Download Datasheet |
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TOSHIBA
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Part No. |
GT50J121
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Description |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power switching Applications fast switching Applications
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File Size |
156.40K /
6 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RM400HV-34S
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Description |
CAP CER 22000PF 10% 50V X8R 0805 HIGH SPEED switching USE INSULATED TYPE fast Recovery Diode Modules, F Series (for IGBT speed switching)
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File Size |
68.61K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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