| |
|
 |
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APT8020LFLL APT8020B2FLL
|
| OCR Text |
...te Voltage Drain Current (VDS = 640v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling ... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
| File Size |
244.54K /
5 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Advanced Power Technolo...
|
| Part No. |
APT8020LLL APT8020B2LL APT8020B2LL_04 APT8020B2LL04 APT8020B2LLG
|
| OCR Text |
...te Voltage Drain Current (VDS = 640v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling ... |
| Description |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 38; RDS(on) (Ohms): 0.2; BVDSS (V): 800;
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
| File Size |
156.54K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APT8024JFLL
|
| OCR Text |
...te Voltage Drain Current (VDS = 640v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling ... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
| File Size |
236.39K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| Part No. |
APT8024JLL_04 APT8024JLL APT8024JLL04
|
| OCR Text |
...te Voltage Drain Current (VDS = 640v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling ... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
| File Size |
161.53K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APT8024LFLL APT8024B2FLL APT8024B2FLLG
|
| OCR Text |
...te Voltage Drain Current (VDS = 640v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling ... |
| Description |
POWER MOS 7 FREDFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
| File Size |
238.14K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| Part No. |
APT8024LLL APT8024B2LL APT8024B2LL_05 APT8024B2LL05
|
| OCR Text |
...te Voltage Drain Current (VDS = 640v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling ... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
| File Size |
159.97K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| Part No. |
APT8024LVFR APT8024B2VFR APT8024B2VFR_04 APT8024B2VFR04
|
| OCR Text |
...te Voltage Drain Current (VDS = 640v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling ... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
| File Size |
136.78K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| Part No. |
APT8024LVR APT8024B2VR APT8024B2VR_04 APT8024B2VR04
|
| OCR Text |
...te Voltage Drain Current (VDS = 640v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling ... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
| File Size |
135.03K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| Part No. |
APT8043SFLL APT8043BFLL APT8043BFLL_04
|
| OCR Text |
...te Voltage Drain Current (VDS = 640v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Pr... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
|
| File Size |
159.66K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
ADPOW[Advanced Power Technology]
|
| Part No. |
APT8043SLL APT8043BLL APT8043BLL_04 APT8043BLL04
|
| OCR Text |
...te Voltage Drain Current (VDS = 640v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Pr... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
| File Size |
159.18K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
