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				N.A.
Part No.	AL440B-24
OCR Text	...ad Data Registers and main 512k x8 memory cell array and the state-of-the-art logic design that takes care of addressing and controlling the read/write data. 7.0 Pin Definition and Description The pin definitions and descriptions are as...
Description	4M-bits Fifo Field Memory
File Size	812.02K / 34 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K9F5608UOC K9F56XXQ0C K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616U0C-Y
OCR Text	...P K9F5616U0C-D,H 2.7 ~ 3.6V X16 x8 2.4 ~ 2.9V X16 Vcc Range 1.70 ~ 1.95V Organization x8 X16 x8 TSOP1 TBGA TSOP1 TBGA TSOP1 TBGA WSOP1 TSOP1...512k)bit x 16bit - Data Register - x8 device(K9F5608X0C) : (512 + 16)bit x 8bit - X16 device(K9F5616...
Description	32M x 8 Bit 16M x 16 Bit NAND Flash Memory
File Size	668.51K / 41 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616UV8011BC BS616UV8011FI BS616UV8011 BS616UV8011BI BS616UV8011DC BS616UV8011DI BS616UV8011FC
OCR Text	... OE options * I/O Configuration x8/x16 selectable by LB and UB pin The BS616UV8011 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a wide range of 1.8V to 2....
Description	Ultra Low Power/Voltage CMOS SRAM 512k X 16 bit
File Size	218.44K / 10 Page	View it Online	Download Datasheet

				FUJITSU[Fujitsu Media Devices Limited]
Part No.	MBM29DL800BA-12 MBM29DL800BA-70 MBM29DL800TA-90 MBM29DL800BA MBM29DL800BA-90 MBM29DL800TA MBM29DL800TA-12 MBM29DL800TA-70
OCR Text	...otection is user definable. (x8) 16K byte (x16) 64K byte (x8) (x16) FFFFFH 7FFFFH FBFFFH 7DFFFH 8K byte F9FFFH 7CFFFH 8K byte...512k x 16-Bit) CMOS Flash Memory 3.0 V-only Read, Program, and Erase 10 MBM29DL800TA-70/-90/-1...
Description	8M (1M X 8/512k X 16) BIT
File Size	343.50K / 59 Page	View it Online	Download Datasheet

				HYNIX[Hynix Semiconductor]
Part No.	HY29LV400BF55 HY29LV400BF70 HY29LV400BF70I HY29LV400BT55 HY29LV400BT55I HY29LV400TF55 HY29LV400TF55I HY29LV400TT55 HY29LV400TT55I HY29LV400BT70 HY29LV400BT70I HY29LV400BT90 HY29LV400BT90I HY29LV400TT90I HY29LV400 HY29LV400BF55I HY29LV400BF90 HY29LV400BF90I HY29LV400TF70 HY29LV400TF70I HY29LV400TF90 HY29LV400TF90I HY29LV400TT70 HY29LV400TT70I HY29LV400TT90
OCR Text	...pears on DQ[15:0] and bytewide (x8) data appears on DQ[7:0]. The HY29LV400 can be programmed and erased in-system with a single 3 volt VCC supply. Internally generated and regulated voltages are provided for program and erase operations, so...
Description	4 Mbit (512k x 8/256K x 16) Low Voltage Flash Memory
File Size	481.78K / 40 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K9K8G08U0A K9K8G08U0A-P K9WAG08U1A-I K9WAG08U1A-P K9WAG08U1A
OCR Text	...U1A-P K9WAG08U1A-I 2.70 ~ 3.60V x8 Vcc Range Organization PKG Type TSOP1 52TLGA FEATURES * Voltage Supply - 2.70V ~ 3.60V * Organization...512k Pages (=8,192 Blocks) 8 bit 2K Bytes 64 Bytes 1 Page = (2K + 64)Bytes 1 Block = (2K + 64)B x...
Description	1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
File Size	1,064.06K / 49 Page	View it Online	Download Datasheet

				Silicon Storage Technology, Inc
Part No.	SST49LF004B SST49LF004B-33-4C-EI SST49LF004B-33-4C-NH SST49LF004B-33-4C-EIE SST49LF004B-33-4C-NHE
OCR Text	x8 (4 Mbit) * Conforms to Intel LPC Interface Specification 1.1 - Supports Single-Byte LPC Memory and Firmware Memory Cycle Types * Flexible Erase Capability - Uniform 4 KByte sectors - Uniform 64 KByte overlay blocks - Chip-Erase for PP Mo...
Description	4 Mbit LPC Firmware Flash
File Size	417.62K / 39 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K5A3380YTC-T755 K5A3380YBC-T755 K5A3280YTC-T855 K5A3280YBC-T855 K5A3280YTC-T755 K5A3280YBC-T755 K5A3x80YTC K5A3380YBC-T855 K5A3380YTC-T855
OCR Text	...Flash memory is organized as 4M x8 or 2M x16 bit and 8Mbit SRAM is organized as 1M x8 or 512k x16 bit. The memory architecture of flash memory is designed to divide its memory arrays into 71 blocks and this provides highly flexible erase an...
Description	MCP MEMORY
File Size	620.40K / 45 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. Samsung Electronic
Part No.	K6F4008U2G-F K6F4008U2G
OCR Text	x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date June...512k x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM Process Technology: Full CMOS Org...
Description	512k x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM 12k × 8位超低功耗和低电压的CMOS静态RAM
File Size	154.51K / 9 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6R4016C1D-JC10 K6R4008V1D-TI10 K6R4008V1D-UI10 K6R4008V1D-JC08 K6R4008V1D-JC10 K6R4008V1D-JI08 K6R4008V1D-JI10 K6R4008V1D-KC08 K6R4008V1D-KC10 K6R4008V1D-KI08 K6R4008V1D-KI10 K6R4008V1D-TC08 K6R4008V1D-TC10 K6R4008C1D-JC10 K6R4016C1D-EC10 K6R4016C1D-EC8 K6R4016C1D-EI10 K6R4016C1D-EI8 K6R4016C1D-EL10 K6R4016C1D-EL8 K6R4016C1D-EP10 K6R4016C1D-EP8 K6R4016C1D-JC8 K6R4016C1D-JI10 K6R4016C1D-JI8 K6R4016C1D-JL10 K6R4016C1D-JL8 K6R4016C1D-JP10 K6R4016C1D-UP8 K6R4004C1D-JC10 K6R4004C1D-JI10 K6R4004C1D-KC10 K6R4004C1D-KI10 K6R4004V1D-JC08 K6R4004V1D-JC10 K6R4004V1D-JI08 K6R4004V1D-JI10 K6R4004V1D-KC08 K6R4004V1D-KC10 K6R4004V1D-KI08 K6R4004V1D-KI10 K6R4008C1D-JI10 K6R4008C1D-KC10 K6R4008C1D-KI10 K6R4008C1D-TC10 K6R4008C1D-TI10 K6R4008C1D-UC10 K6R4008C1D-UI10 K6R4008V1D-TI08 K6R4008V1D-UC08 K6R4008V1D-UC10 K6R4008V1D-UI08 K6R4016C1D K6R4016C1D-JP8 K6R4016C1D-KC10 K6R4016C1D-KC8 K6R4016C1D-KI10 K6R4016C1D-KI8 K6R4016C1D-KL10 K6R4016C1D-KL8 K6R4016C1D-KP10 K6R4016C1D-KP8 K6R4016C1D-TC10 K6R4016C1D-TC8 K6R4016C1D-TI10 K6R4016C1D-TI8 K6R4016C1D-TL10 K6R4016C1D-TL8 K6R4016C1D-TP10 K6R4016C1D-TP8 K6R4016C1D-UC10 K6R4016C1D-UC8 K6R4016C1D-UI10 K6R4016C1D-UI8 K6R4016C1D-UL10 K6R4016C1D-UL8 K6R4016C1
OCR Text	...K6R4008C1D-J(K,T,U)C(I) 10 512k x8 K6R4008V1D-J(K,T,U)C(I) 08/10 K6R4016C1D-J(K,T,U,E)C(I) 10 256K x16 K6R4016V1D-J(K,T,U,E)C(I,L,P) 08/10 VDD(V) 5 3.3 5 3.3 5 3.3 Speed ( ns ) 10 8/10 10 8/10 10 8/10 PKG J : 32-SOJ K : 32-SOJ(LF) J : 36-S...
Description	256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. 256Kx16位高速静态RAM.0V操作）。在经营商业和工业温度范围 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. 256Kx16位高速静RAM.0V操作）。在经营商业和工业温度范围 CAP,ELECTRO,1000UF,25V DIODE,RECT,1A 400V SMD MELF PCB Relay; Contacts:SPDT; Coil Voltage AC Max:120V; Contact Carry Current:30A; Coil Resistance:3000ohm; Mounting Type:PCB; Relay Terminals:Quick Connect; Relay Mounting:PC Board; Contact Rating:30A; Switch Function:SPDT Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 470uF; Voltage: 63V; Case Size: 12.5x20 mm; Packaging: Bulk
File Size	138.58K / 12 Page	View it Online	Download Datasheet

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