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For 0.4mh Found Datasheets File :: 320 Search Time::1.782ms
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				AUK corp
Part No.	SUF2001
OCR Text	...ures * Low VGS(th) : VGS(th)=1.0~3.0V * Small footprint due to small package * Low RDS (ON) : Low RDS(ON)=N-ch:24m , P-ch:66m Ordering I...4mH, IAS=5.8A, VDD=15V, RG=25 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independen...
Description	Dual N and P-channel Trench MOSFET
File Size	634.85K / 13 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SK3566
OCR Text	... transfer admittance: \|Yfs\| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID...4mH VDS 15 V -15 V WAVE FORM AS = 1 B VDSS L I2 B 2 - VDD VDSS 5 200...
Description	Switching Regulator Applications
File Size	249.28K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FQA9P25
OCR Text	... * * * -10.5A, -250V, RDS(on) = 0.62 @VGS = -10 V Low gate charge ( typical 29 nC) Low Crss ( typical 27 pF) Fast switching 100% avalanche t...4mH, IAS = -10.5A, VDD = -50V, RG = 25 , Starting TJ = 25C 3. ISD -9.4A, di/dt 300A/s, VDD BVDSS,...
Description	250V P-Channel MOSFET
File Size	575.08K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRL610 IRL610A
OCR Text	...RL610A BVDSS = 200 V RDS(on) = 0.046 ID = 3.3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EA...4mH, IAS=3.3A, VDD=50V, RG=27, Starting TJ =25 C (3) ISD 3.3A, di/dt 140A/s, VDD BVDSS , Starting...
Description	Advanced Power MOSFET
File Size	233.69K / 7 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SK3046
OCR Text	...13.70.2 4.20.2 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source b...4mH, IL = 7A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off ...
Description	Silicon N-Channel Power F-MOS FET
File Size	44.25K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	61CTQ045PBF
OCR Text	...Apk, TJ = 125C range 60 45 2600 0.57 - 65 to 175 A V A V C Description/ Features Units A This center tap Schottky rectifier has been opt...4mH Current decaying linearty to zero in 1 sec Frequency limited by T J max. V A = 1.5 x VR typical ...
Description	SCHOTTKY RECTIFIER
File Size	130.18K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	61CTQ045
OCR Text	...Apk, TJ = 125C range 60 45 2600 0.57 - 65 to 175 A V A V C Description/Features Units A This center tap Schottky rectifier has been opti...4mH Current decaying linearty to zero in 1 sec Frequency limited by T J max. VA = 1.5 x VR typical ...
Description	45V 60A Schottky Discrete Diode in a TO-220AB package SCHOTTKY RECTIFIER
File Size	87.83K / 6 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] Delta
Part No.	DT31-2032AT DT31-2025AT DT31-2026AT DT31-2031AT
OCR Text	...DELTAXXXX A B 10 9 8 7 6 6 0.5 5 PRI 4 2 N1 N3 N2 5 9 SEC 7 F 10 9 D 8 7 6 TINNED CP WIRE (2) 1 EC 1 2 3...4mH 10% PRI: 11uH Max. @100KHz 0.1V PRI: 2.6 SEC: 1.0 Max. Max. (PRI:SEC): 2:1 1% @10KHz 0.1V PRI...
Description	Telecommunication HDSL Transformer 电信HDSL变压
File Size	65.39K / 1 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15
OCR Text	...M5210 BVDSS -100V RDS(on) 0.07 ID -34A Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced pr...4mH Peak IAS = -21A, VGS = -10V, RG= 25 ISD - 21A, di/dt - 400 A/s, Pulse width 300 s; Duty ...
Description	-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package 34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A) Avalanche Energy Ratings
File Size	111.77K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDAF62N28
OCR Text	0.051 @VGS = 10 V * Low gate charge ( typical 77 nC) * Low Crss ( typical 83 pF) * Fast switching * 100% avalanche tested * Improved dv/dt c...4mH, IAS = 36A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 36A, di/dt 200A/s, VDD BVDSS, Starti...
Description	280V N-Channel MOSFET
File Size	718.08K / 8 Page	View it Online	Download Datasheet

For 0.4mh Found Datasheets File :: 320 Search Time::1.782ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |