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  0.4mh Datasheet PDF File

For 0.4mh Found Datasheets File :: 316    Search Time::1.625ms    
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    INTERSIL[Intersil Corporation]
Part No. HGTD1N120BNS FN4649 HGTP1N120BN
OCR Text ...perature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Pack...4mH Test Circuit (Figure 18) TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 1.0A VCE = 0.8 BVCES ...
Description 5.3A/ 1200V/ NPT Series N-Channel IGBT
5.3A, 1200V, NPT Series N-Channel IGBT
From old datasheet system

File Size 71.00K  /  7 Page

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    KT11835TTEG123G KT11835TTEG123H KT11835TTEG123J KT11835TTEG722G KT11835TTEG722H KT11835TTEG722J

KOA Speer Electronics, Inc.
Part No. KT11835TTEG123G KT11835TTEG123H KT11835TTEG123J KT11835TTEG722G KT11835TTEG722H KT11835TTEG722J
OCR Text ...42.008 (3.60.2) .118 max. (3.0 max.) the code for inductance tolerance (g, h, j) enters any other inductance under 12mh is available ...4mh 12mh 7. 2mh 2. 4mh kt11835 characteristics test equipment: agilent 4294a impedance analyzer ci...
Description transponder coil (Rx)

File Size 185.55K  /  2 Page

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    International Rectifier, Corp.
Part No. IRGB6B60KPBF
OCR Text ...sink, flat, greased surface ??? 0.50 ??? c/w r ja junction-to-ambient, typical socket mount ??? ??? 62 r ja junction-to-ambient (pcb mou...4mh e tot total switching loss ??? 245 455 ls = 150nh t j = 25c t d(on) turn-on delay time ...
Description INSULATED GATE BIPOLAR TRANSISTOR 绝缘栅双极晶体管

File Size 291.06K  /  14 Page

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    IRGB6B60K IRGS6B60K IRGSL6B60K

International Rectifier
Part No. IRGB6B60K IRGS6B60K IRGSL6B60K
OCR Text ...sink, flat, greased surface ??? 0.50 ??? c/w r ja junction-to-ambient, typical socket mount ??? ??? 62 r ja junction-to-ambient (pcb mou...4mh e tot total switching loss ??? 245 455 ls = 150nh t j = 25c t d(on) turn-on delay time ...
Description 600V UltraFast 10-30 kHz IGBT in a TO-220AB package
600V UltraFast 10-30 kHz IGBT in a D2-Pak package
600V UltraFast 10-30 kHz IGBT in a TO-262 package

File Size 235.10K  /  13 Page

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    IRGB6B60KD IRGS6B60KD IRGSL6B60KD

International Rectifier
Part No. IRGB6B60KD IRGS6B60KD IRGSL6B60KD
OCR Text ... continuous collector current 7.0 i cm pulsed collector current 26 i lm clamped inductive load current 26 a i f @ t c = 25c diode continuo...4mh e tot total switching loss ??? 245 455 ls = 150nh t j = 25c t d(on) turn-on delay time ...
Description 600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package
600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package

File Size 295.95K  /  15 Page

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    INTERSIL[Intersil Corporation]
Part No. HGT1S1N120 FN4651 HGT1S1N120CNDS HGTP1N120CND
OCR Text ...perature for Soldering Leads at 0.063in (1.6cm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Pac...4mH, Test Circuit (Figure 20) 2 HGTP1N120CND, HGT1S1N120CNDS Electrical Specifications PARAM...
Description 6.2A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
6.2A 1200V NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system
6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 79.21K  /  7 Page

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    IRF[International Rectifier]
Part No. IRGIB6B60KD
OCR Text ...TO-220 Full-Pak Max. 600 11 7.0 A 22 22 9.0 6.0 18 2500 20 38 19 -55 to +175 C 300 (0.063 in. (1.6mm) from case) 10 lbf.in (1.1N.m) W V ...4mH Ls= 150nH, TJ = 25C IC = 5.0A, VCC = 400V VGE = 15V, RG = 100, L = 1.4mH Ls= 150nH, TJ = 25C ...
Description 600V Low-Vceon Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 270.40K  /  12 Page

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    HGT1S1N120BNDS HGTP1N120BND HGT1S1N120BNDS9A

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HGT1S1N120BNDS HGTP1N120BND HGT1S1N120BNDS9A
OCR Text ...perature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Pack...4mH Test Circuit (Figure 20) 2 HGTP1N120BND, HGT1S1N120BNDS Electrical Specifications PARAME...
Description 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N沟道绝缘栅双极型晶体管(带反并行超快速二极管 5.3 A, 1200 V, N-CHANNEL IGBT, TO-263AB
5.3A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 74.80K  /  7 Page

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    IRGS6B60KD IRGSL6B60KD IRGB6B60KD

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRGS6B60KD IRGSL6B60KD IRGB6B60KD
OCR Text ...D2Pak IRGS6B60KD Max. 600 13 7.0 26 26 13 7.0 26 20 90 36 -55 to +150 TO-262 IRGSL6B60KD Units V Absolute Maximum Ratings Paramete...4mH 455 Ls = 150nH TJ = 25C CT4 34 IC = 5.0A, VCC = 400V 26 VGE = 15V, RG = 100 L =1.4mH 230 ns Ls ...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 绝缘栅双极型晶体管,超快软恢复二极管
From old datasheet system

File Size 304.25K  /  15 Page

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For 0.4mh Found Datasheets File :: 316    Search Time::1.625ms    
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