| |
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FQAF16N25C
|
| OCR Text |
...ote 1)
FQAF16N25C 250 11.4 7.2 45.6 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Vol...7mH, IAS = 15.6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 11.4A, di/dt 300A/s, VDD BVDSS, S... |
| Description |
250V N-Channel Advance Q-FET C-Series
250V N-Channel MOSFET
|
| File Size |
854.42K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FQB6N40CFTM FQB6N40CF
|
| OCR Text |
...6N40CF
400 6 3.8 24 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units
V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulse...7mH, IAS = 6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 6A, di/dt 200A/s, VDD BVDSS, Startin... |
| Description |
400V N-Channel MOSFET
|
| File Size |
964.99K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FQI10N20L FQB10N20L FQB10N20LTM
|
| OCR Text |
...10N20L 200 10 6.3 40 20
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/C C C
Gate-Source Voltage Single Puls...7mH, IAS = 10A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 10A, di/dt 300A/s, VDD BVDSS, Start... |
| Description |
200V LOGIC N-Channel MOSFET
200V N-Channel Logic Level QFET
|
| File Size |
572.73K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FQP6N40CF
|
| OCR Text |
...6N40CF
400 6 3.6 24 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units
V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulse...7mH, IAS = 6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 6A, di/dt 200A/s, VDD BVDSS, Startin... |
| Description |
400V N-Channel MOSFET
|
| File Size |
1,059.67K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FQPF6N40CF FQP6N40CF FQP6N40CF_06 FQP6N40CF06
|
| OCR Text |
...= 100C) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitiv...7mH, IAS = 6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 6A, di/dt 200A/s, VDD BVDSS, Startin... |
| Description |
400V N-Channel MOSFET
|
| File Size |
1,062.53K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| Part No. |
HGTP3N60A4 HGTD3N60A4 HGTD3N60A4S HGTP3N60A4NL
|
| OCR Text |
... 3A * 200kHz Operation at 390V, 2.5A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC...7mH IC = 3A, VCE = 300V IC = 3A, VCE = 300V
Current Turn-On Delay Time Current Rise Time Current ... |
| Description |
600V, NPT Series N-Channel IGBT
600V/ SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT
|
| File Size |
139.94K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| Part No. |
HGTP3N60A4 HGT1S3N60A4S HGTD3N60A4S
|
| OCR Text |
... 3A * 200kHz Operation at 390V, 2.5A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC...7mH IC = 3A, VCE = 300V IC = 3A, VCE = 300V
Current Turn-On Delay Time Current Rise Time Current ... |
| Description |
600V, SMPS Series N-Channel IGBT 17 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V/ SMPS Series N-Channel IGBT
|
| File Size |
155.07K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRF7E3704 IRF7E3704-15
|
| OCR Text |
...age 12* 10 48 20 0.16 20 120 12 2.0 1.0 -55 to 150 300 (for 5s) 0.42 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C...7mH Peak IAS = 12A, VGS =10V, RG = 25
ISD 12A, di/dt 100A/s,
VDD 20V, TJ 150C
Pulse wid... |
| Description |
Avalanche Energy Ratings
HEXFET POWER MOSFET SURFACE MOUNT (LCC-18)
20V Single N-Channel Hi-Rel MOSFET in a LCC-18 package
|
| File Size |
122.67K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRF7F3704
|
| OCR Text |
...ge 12* 12* 48 20 0.16 16 190 12 2.0 0.5 -55 to 150 300 ( 0.063 in./1.6mm from case for 10s) 0.98 (Typical)
Units A
W
W/C
V mJ A mJ V...7mH Peak IAS =12A, VGS = 10V, RG= 25
ISD 12A, di/dt 80A/s, Pulse width 300 s; Duty Cycle 2%... |
| Description |
HEXFET? POWER MOSFET THRU-HOLE (TO-39) 20V, N-CHANNEL
HEXFET㈢ POWER MOSFET THRU-HOLE (TO-39) 20V, N-CHANNEL
|
| File Size |
174.16K /
7 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
