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2.7mh Datasheet PDF File

For 2.7mh Found Datasheets File :: 91 Search Time::1.516ms
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				ADPOW[Advanced Power Technology]
Part No.	APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
OCR Text	...3471 4 Starting T = +25C, L = 1.27mH, R = 25W, Peak I = 71A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ] APT Reserves the right to change...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.44K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8058HVR
OCR Text	...471 4 Starting T = +25C, L = 14.27mH, R = 25, Peak I = 13.5A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 , THERMAL IMPEDANCE (C/W) D=0.5 0.2 0.1 0.05 0.05 0.02 0.01 ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 13.5A 0.580 Ohm
File Size	60.35K / 4 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF5801
OCR Text	...DSS. Starting TJ = 25C, L = 27mH RG = 25, IAS = 0.36A. Pulse width 400s; duty cycle 2%. ISD 0.36A, di/dt 93A/s, VDD V(BR)DSS, TJ 150C. Data and specifications subject to change without notice. This product has been des...
Description	Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rdson）最大值\u003d 2.2ohm，身份证\u003d 0.6A的） Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A)
File Size	119.47K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFPS3810
OCR Text	...1) Starting TJ = 25C, L = 0.27mH R G = 25, IAS = 100A. (See Figure 12) Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Calculat...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A? Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A) Power MOSFET(Vdss=100V Rds(on)=0.009ohm Id=170A) Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A?)
File Size	122.48K / 8 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics ST Microelectronics
Part No.	STV9306 6389
OCR Text	... 6 100F 7 8 V. YOKE R = 9.6 L = 27mH I = 1.3APP FLYBACK GND OUT CHOLD SYNC VS CRAMP SDA 1 SCL 10k 9 100 24V 1N4004 10 VOPS 11 EWOUT 10 12V 1 S T V 9 3 0 6 470 100 12 SENS2 1000F 13 EWFB 10k 14 SENS1 EW DIODE MODUL...
Description	BUS CONTROLLED VERTICAL DEFLECTION SYSTEM WITH EAST/WEST CORRECTION OUTPUT CIRCUIT From old datasheet system
File Size	88.26K / 12 Page	View it Online	Download Datasheet

				Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
Part No.	2SK3505 2SK3505-01 2SK3505-01MR
OCR Text	...temperature range Tstg C 1 L=2.27mH, Vcc=50V 2 Tch <150C 3 IF< -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C = = = = 4 VDS < 500V = Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or n...
Description	N CHANNEL SILICON POWER MOSFET
File Size	103.81K / 4 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710ZPB IRF3710ZLPBF IRF3710ZSPBF IRF3710ZPBF IRF3710ZXPBF
OCR Text	...TJmax, starting TJ = 25C, L = 0.27mH, RG = 25, IAS = 35A, VGS =10V. Part not recommended for use above this value. ISD 35A, di/dt 380A/s, VDD V(BR)DSS, TJ 175C. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance ...
Description	AUTOMOTIVE MOSFET 汽车MOSFET HEXFET Power MOSFET
File Size	321.21K / 12 Page	View it Online	Download Datasheet

				RICOH[RICOH electronics devices division] Ricoh Co., Ltd. RICOH electronics devic...
Part No.	R1223N332A R1223N332C R1223N332D R1223N332E R1223N332F R1223N502H R1223N502G-TR R1223N502G R1223N502F-TR R1223N502E-TR R1223N332H-TR R1223N152H-TR R1223N152H R1223N152G-TR R1223N152G R1223N152F-TR R1223N152F R1223N152E-TR R1223N152E R1223N152D-TR R1223N152D R1223N332E-TR R1223N332H R1223N332A-TR R1223N332C-TR R1223N332D-TR R1223N332F-TR R1223N332G R1223N332G-TR R1223N152A-TR R1223N502H-TR 3N152 R1223N R1223N152A R1223N152C R1223N152C-TR R1223N252A R1223N252A-TR R1223N252C R1223N252C-TR R1223N252D R1223N252D-TR R1223N252E R1223N252E-TR R1223N252F R1223N252F-TR R1223N252G R1223N252G-TR R1223N252H R1223N252H-TR R1223N502A R1223N502A-TR R1223N502C R1223N502C-TR R1223N502D R1223N502D-TR R1223N502E R1223N502F R1223N2.12C-TL R1223N1.52C-TL R1223N1.92C-TL R1223N2.02C-TL R1223N2.22C-TL R1223N2.52C-TL R1223N2.82C-TL R1223N3.02C-TL R1223N1.72C-TL R1223N2.72C-TL R1223N2.92C-TL R1223N1.82C-TL R1223N2.42C-TL R1223N1.62E-TL R1223N3.12E-TL R1223N2.32E-TL R1223N2.52E-TL R1223N2.92E-TL R1223N2.62E-TL R1223N1.52E-TL R1223N1.72E-TL R1223N2.12E-TL R1223N2.82E-TL R1223N3.32E-TL R1223N1.82E-TL R1223N1.92E-TL R1223N3.22E-TL R1223N3.42E-TL R1223N2.42E-TL R1223N2.72E-TL R1223N2.02E-TL R1223N2.22E-TL R1223N3
OCR Text	...m Type) L : CD105(Sumida, 27mH) COUT : 47mF(Tantalum Type) When you use these ICs, consider the following issues; l As shown in the block diagram, a parasitic diode is formed in each terminal, each of these diodes is not formed ...
Description	PWM/VFM step-down DC/DC converter with low supply current by CMOS. Output voltage 1.6V. Oscillator frequency 300kHz. Taping specification TL PWM/VFM step-down DC/DC converter with low supply current by CMOS. Output voltage 1.6V. Oscillator frequency 500kHz. Standard taping specification TR PWM/VFM step-down DC/DC converter with low supply current by CMOS. Output voltage 1.6V. Oscillator frequency 300kHz. Standard taping specification TR PWM/VFM step-down DC/DC converter with low supply current by CMOS. Output voltage 1.5V. Oscillator frequency 300kHz. Reset-type protection. Taping specification TL PWM/VFM step-down DC/DC converter with low supply current by CMOS. Output voltage 1.5V. Oscillator frequency 500kHz. Standard taping specification TR PWM/VFM step-down DC/DC converter with low supply current by CMOS. Output voltage 1.5V. Oscillator frequency 500kHz. Taping specification TL PWM/VFM step-down DC/DC converter with low supply current by CMOS. Output voltage 1.5V. Oscillator frequency 300kHz. Taping specification TL 5015 RR 6#16S SKT PLUG Analog IC 模拟IC PWM/VFM Step-down DC/DC Converter SWITCHING CONTROLLER, 360 kHz SWITCHING FREQ-MAX, PDSO5 PWM/VFM Step-down DC/DC Converter 脉宽调制/ VFM的降压直直流转换 PWM/VFM Step-down DC/DC Converter SWITCHING CONTROLLER, 600 kHz SWITCHING FREQ-MAX, PDSO5 PWM/VFM step-down DC/DC converter with low supply current by CMOS. Output voltage 1.5V. Oscillator frequency 500kHz. Reset-type protection. Taping specification TL PWM/VFM step-down DC/DC converter with low supply current by CMOS. Output voltage 1.6V. Oscillator frequency 500kHz. Taping specification TL PWM/VFM step-down DC/DC converter with low supply current by CMOS. Output voltage 1.6V. Oscillator frequency 300kHz. Reset-type protection. Taping specification TL
File Size	205.10K / 19 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] http://
Part No.	FDD3682 FDD3682NL
OCR Text	...es: 1: Starting TJ = 25C, L = 0.27mH, IAS = 20A. (c)2002 Fairchild Semiconductor Corporation FDD3682 Rev. B FDD3682 Typical Characteristics TC = 25C unless otherwise noted 1.2 35 30 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 0 25 50...
Description	N-Channel PowerTrench MOSFET, 100V, 32A, 0.036 ohm 5.5 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA N-Channel PowerTrench MOSFET 100V/ 32A/ 36m N-Channel PowerTrench MOSFET 100V, 32A, 36mз N-Channel PowerTrench MOSFET 100V, 32A, 36m?/a>
File Size	205.65K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL
OCR Text	...VDD =50V, starting TJ = 25C, L =27mH RG = 25, I AS = 6.2A. (See Figure 11) Pulse width 300s; duty cycle 2%. Uses IRFBC40 data and test conditions ISD 6.2A, di/dt 80A/s, VDD V(BR)DSS , TJ 150C ** When mounted on 1" square PCB...
Description	600V Single N-Channel HEXFET Power MOSFET in a TO-262 package 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A) CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）\u003d 1.2ohm，身份证\u003d 6.2A
File Size	346.70K / 10 Page	View it Online	Download Datasheet

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