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  1.2ghz Datasheet PDF File

For 1.2ghz Found Datasheets File :: 393    Search Time::2.906ms    
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    EPA060BV EPA060B

Excelics Semiconductor, Inc.
Part No. EPA060BV EPA060B
OCR Text ...ower at 1db compression f=12ghz 26.5 26.5 p 1db vds=8v, ids=50% idss f=18ghz 25 26.5 25 26.5 dbm gain at 1db compression f=12ghz 11 13 13 14.5 g 1db vds=8v, i...
Description 8-12V high efficiency heterojunction power FET

File Size 44.05K  /  3 Page

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    CHE1260-QAG

United Monolithic Semiconductors
Part No. CHE1260-QAG
OCR Text ... Vref_I - Vdet_I (mV) 1000 12GHz 22GHz 100 17GHz 27GHz 10 Main Characteristics Tamb = +25 VDC = +4.5V (on DC_I and DC_R) C, Symbol F IL Dr Parameter Frequency range Insertion Loss Dynamic Range -20 -18 -16 -14 -12 -10 -8 -...
Description 12-27GHz Bidirectionnal Detector

File Size 781.90K  /  10 Page

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    RFMD
Part No. RFUV1003
OCR Text ...,2 vc1 n/c n/c n/c vc2 rfuv1003 12ghz to 16ghz gaas mmic iq upconverter rfmd's rfuv1003 is a 12ghz to 16ghz gaas phemt upconverter, incorporating an integrated lo buffer amplifier, a bala nced single side band (image rejection) mixer follow...
Description 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER

File Size 1,005.22K  /  10 Page

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    Transcom
Part No. TC1101
OCR Text ... = 2 v, i ds = 10 ma, f = 12ghz 0.5 0.7 db g a associated gain at v ds = 2 v, i ds = 10 ma, f = 12ghz 10 12 db p 1db output power at 1db gain compression point , f = 12ghz v ds = 4 v, i ds = 25 ma 17 18 dbm g l linear power ...
Description Low Noise and Medium Power GaAs FETs

File Size 152.35K  /  6 Page

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    Fujitsu Limited
Part No. FHX05LG
OCR Text ...a v ds = 2v, i ds = 10ma, f = 12ghz i gs = -10 a ma ms v v db db g m v p v gso nf fhx04lg fhx05lg fhx06lg g as noise figure associated gain - 0.9 1.1 9.5 10.5 -db db nf g as noise figure associated gain - 1.1 1.35 9.5 10.5 -db db nf g a...
Description Super Low Noise HEMT

File Size 111.52K  /  5 Page

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    EFA025A-70 EFA025A-100P

Excelics Semiconductor, Inc.
Part No. EFA025A-70 EFA025A-100P
OCR Text ...sion ? 10.0 db power gain at 12ghz ? 7.0 db power gain at 18ghz ? typical 1.50 db noise figure and 10.0 db associated gain at 12ghz ? 0.3 x 250 micron recessed ?mushroom? gate ? si 3 n 4 passivation ? advanced epi...
Description Low Distortion GaAs Power FET

File Size 98.64K  /  3 Page

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    EFA024A

Excelics Semiconductor, Inc.
Part No. EFA024A
OCR Text ... 11.0db typical power gain at 12ghz typical 1.6 db noise fi gure and 10 db associated gain at 12ghz 0.3 x 240 micron recessed ?mushroom? gate si 3 n 4 passivation advanced epitaxial doping profile ...
Description 6-10V low distortion GaAs power FET

File Size 43.81K  /  2 Page

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    50S-1313XX

JFW Industries, Inc.
Part No. 50S-1313XX
OCR Text ...maximum 4-8ghz 1.30:1 maximum 8-12ghz 1.35:1 maximum 12-18ghz insertion loss 0.10 db maximum dc-1ghz 0.15 db maximum 1-4ghz 0.20 db maximum 4-8ghz 0.30 db maximum 8-12ghz 0.35 db maximum 12-18ghz isolation 85 db minimum dc-1ghz 80 db minimu...
Description 1P2T FAILSAFE ELECTROMECHANICAL RF SWITCH

File Size 24.92K  /  2 Page

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    EPA025A

Excelics Semiconductor, Inc.
Part No. EPA025A
OCR Text ...E AND 11.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 5 mA PER BIN RANGE ' 6 ...
Description 8-12V high efficiency heterojunction power FET

File Size 38.98K  /  3 Page

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    EPA240B-100P

Excelics Semiconductor, Inc.
Part No. EPA240B-100P
OCR Text ...ER 10.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 2400 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY G D ELECTRICAL CHARACTERISTICS ...
Description High Efficiency Heterojunction Power FET

File Size 35.24K  /  1 Page

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