1.2ghz pdf Datasheet P11 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : CS840 HLP5050 AAMDB 330KL BAV301 638472 R1602 37P2S2
	Product Description
	Full Text Search

1.2ghz Datasheet PDF File

For 1.2ghz Found Datasheets File :: 323 Search Time::1.75ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |

				Transcom
Part No.	TC1101
OCR Text	... = 2 v, i ds = 10 ma, f = 12ghz 0.5 0.7 db g a associated gain at v ds = 2 v, i ds = 10 ma, f = 12ghz 10 12 db p 1db output power at 1db gain compression point , f = 12ghz v ds = 4 v, i ds = 25 ma 17 18 dbm g l linear power ...
Description	Low Noise and Medium Power GaAs FETs
File Size	152.35K / 6 Page	View it Online	Download Datasheet

				Fujitsu Limited
Part No.	FHX05LG
OCR Text	...a v ds = 2v, i ds = 10ma, f = 12ghz i gs = -10 a ma ms v v db db g m v p v gso nf fhx04lg fhx05lg fhx06lg g as noise figure associated gain - 0.9 1.1 9.5 10.5 -db db nf g as noise figure associated gain - 1.1 1.35 9.5 10.5 -db db nf g a...
Description	Super Low Noise HEMT
File Size	111.52K / 5 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EFA025A-70 EFA025A-100P
OCR Text	...sion ? 10.0 db power gain at 12ghz ? 7.0 db power gain at 18ghz ? typical 1.50 db noise figure and 10.0 db associated gain at 12ghz ? 0.3 x 250 micron recessed ?mushroom? gate ? si 3 n 4 passivation ? advanced epi...
Description	Low Distortion GaAs Power FET
File Size	98.64K / 3 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF1951A_1 MGF1951A MGF1951A1
OCR Text	...p=9.0dB , P1dB=13dBm (Typ.) @ f=12GHz APPLICATION S to Ku band power Amplifiers Fig.1 QUALITY GRADE GG ORDERING INFORMATION Tape & reel 3000pcs./reel Keep Safety first in your circuit designs! ABSOLUTE MAXIMUM RATINGS Sym...
Description	Microwave Power MES FET
File Size	142.27K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF1954A
OCR Text	...p=5.0dB , P1dB=23dBm (Typ.) @ f=12GHz APPLICATION S to Ku band power Amplifiers Fig.1 QUALITY GRADE GG RECOMMENDED BIAS CONDITION VDS=6V, ID=100mA ORDERING INFORMATION Tape & reel 3000pcs./reel Keep Safety first in you...
Description	Microwave Power MES FET
File Size	157.33K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFC4419G
OCR Text	...ated gain Gs=12.0 dB (MIN.) @ f=12GHz @ f=12GHz APPLICATION X to K band amplifiers. RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate ...
Description	InGaAs HEMT Chip
File Size	51.23K / 5 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EFA024A
OCR Text	... 11.0db typical power gain at 12ghz typical 1.6 db noise fi gure and 10 db associated gain at 12ghz 0.3 x 240 micron recessed ?mushroom? gate si 3 n 4 passivation advanced epitaxial doping profile ...
Description	6-10V low distortion GaAs power FET
File Size	43.81K / 2 Page	View it Online	Download Datasheet

				JFW Industries, Inc.
Part No.	50S-1313XX
OCR Text	...maximum 4-8ghz 1.30:1 maximum 8-12ghz 1.35:1 maximum 12-18ghz insertion loss 0.10 db maximum dc-1ghz 0.15 db maximum 1-4ghz 0.20 db maximum 4-8ghz 0.30 db maximum 8-12ghz 0.35 db maximum 12-18ghz isolation 85 db minimum dc-1ghz 80 db minimu...
Description	1P2T FAILSAFE ELECTROMECHANICAL RF SWITCH
File Size	24.92K / 2 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EFA060B EFA060BV
OCR Text	...0b and 12.0db for efa060bv at 12ghz 0.3 x 600 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial doping profile provides high power efficiency, linearity and reliability efa060bv w...
Description	8-12V low distortion GaAs power FET
File Size	29.01K / 2 Page	View it Online	Download Datasheet

				Transcom, Inc.
Part No.	TC2381
OCR Text	...s = 4 v, i ds = 50 ma, f = 12ghz 0.9 1.2 db g a associated gain at v ds = 4 v, i ds = 50 ma, f = 12ghz 7.5 9 db p 1db output power at 1db gain compression point, f = 12ghz v ds = 6 v, i ds = 80 ma 23.5 24.5 ...
Description	Low Noise and Medium Power Packaged GaAs FETs
File Size	275.19K / 4 Page	View it Online	Download Datasheet

For 1.2ghz Found Datasheets File :: 323 Search Time::1.75ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |