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    3SK298ZP-TL-E

Renesas Electronics Corporation
Part No. 3SK298ZP-TL-E
OCR Text ...res * Low noise figure. NF = 1.0 dB typ. at f = 200 MHz * Capable of low voltage operation Outline RENESAS Package code: PTSP0004ZA-A (...00576 0.00562 S12 ANG. 76.9 85.7 78.2 73.5 68.7 63.9 64.3 64.5 60.9 53.5 49.3 49.0 50.2 49.3 46.6 43...
Description UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82, CMPAK-4
Silicon N-Channel Dual Gate MOS FET

File Size 182.15K  /  9 Page

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    3SK297ZP-TL-E 3SK297

Renesas Electronics Corporation
Part No. 3SK297ZP-TL-E 3SK297
OCR Text ...res * Low noise figure. NF = 1.0 dB typ. at f = 200 MHz * Capable of low voltage operation Outline RENESAS Package code: PLSP0004ZA-A (...00576 0.00562 S12 ANG. 76.9 85.7 78.2 73.5 68.7 63.9 64.3 64.5 60.9 53.5 49.3 49.0 50.2 49.3 46.6 43...
Description Silicon N-Channel Dual Gate MOS FET

File Size 187.40K  /  9 Page

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    BB504C

Renesas Electronics Corporation
Part No. BB504C
OCR Text ... board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 ...00576 0.00642 0.00689 0.00712 0.00765 0.00804 0.00798 0.00787 0.00785 0.00758 0.00721 0.00694 0.0071...
Description Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

File Size 206.73K  /  10 Page

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    BIC702C

Hitachi Semiconductor
Part No. BIC702C
OCR Text ...( f = 1kHz) * Low noise; NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.6 dB typ. (at f = 900 MHz) * Withstanding to ESD; Build in ESD absorbing ...00576 0.00642 0.00689 0.00712 0.00765 0.00804 0.00798 0.00787 0.00785 0.00758 0.00721 0.00694 0.0071...
Description Bias Controlled Monolithic IC

File Size 92.04K  /  11 Page

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    Electro Craft
Part No. N-3406-2
OCR Text ... Dielectric Rating N-2302-1 0.000009 0.00008 0.000018 0.00016 1.0/2.2 1.3/2.9 1.3/2.9 1.5/3.3 0.023 0.2 0.12 1.0 6000 N-2304-1 N-3406...00576 9.1/20.1 9.6/21.2 10.9/24.0 11.4/25.1 0.35 3.1 1.3 11 4000 N-5637-2 N-5647-2 MECHANICAL DAT...
Description (N-Series) Motors Brushless Servo Motors

File Size 520.31K  /  12 Page

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    T298N

Infineon Technologies AG
Part No. T298N
OCR Text ...iec 60747-6 f = 50 hz, i gm = 0,6 a di g /dt = 0,6 a/s (di t /dt) cr 150 a/s kritische spannungssteilheit critical rate of rise of o...00576 0,00932 0,01452 0,02577 0,06024 ? z th rec [c/w] 0,01562 0,02634 0,03542 0,05150 0,0885...
Description Netz-Thyristor Phase Control Thyristor

File Size 263.47K  /  10 Page

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    BB504MDS-TL-E BB504MDS-TL-H BB504M11

Renesas Electronics Corporation
Part No. BB504MDS-TL-E BB504MDS-TL-H BB504M11
OCR Text ...d space. ? low noise; nf = 1.0 db typ. at f = 200 mhz, nf = 1.75 db typ. at f =900 mhz ? high gain; pg = 30 db typ. at f = 200 mhz, pg...00576 74.7 0.978 -17.1 400 0.954 -30.3 2.60 142.7 0.00642 71.7 0.973 -19.6 450 0.945 -33.8 2....
Description Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

File Size 122.38K  /  10 Page

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    BB504M

Renesas Electronics Corporation
Part No. BB504M
OCR Text ...rd space. ? low noise; nf = 1.0 db typ. at f = 200 mhz, nf = 1.75 db typ. at f =900 mhz ? high gain; pg = 30 db typ. at f = 200 mhz, pg ...00576 74.7 0.978 -17.1 400 0.954 -30.3 2.60 142.7 0.00642 71.7 0.973 -19.6 450 0.945 -33.8 2....
Description Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

File Size 204.50K  /  10 Page

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    T640N

Infineon Technologies AG
Part No. T640N
OCR Text ...tage t vj = t vj max , v d = 0,67 v drm 5.kennbuchstabe / 5 th letter f (dv d /dt) cr 1000 v/s charakteristische werte / characte...00576 0,00944 0,01608 0,02906 z th rec = z th dc + ? z th rec z th sin = z th dc + ...
Description Netz-Thyristor Phase Control Thyristor

File Size 238.58K  /  10 Page

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    T920N

Infineon Technologies AG
Part No. T920N
OCR Text ...iec 60747-6 f = 50 hz, i gm = 0,8 a, di g /dt = 0,8 a/s (di t /dt) cr 300 a/s kritische spannungssteilheit critical rate of rise of...00576 0,00944 0,01608 0,02906 z th rec = z th dc + ? z th rec z th sin = z th dc + ...
Description Netz-Thyristor Phase Control Thyristor

File Size 239.39K  /  10 Page

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