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60028 2N1488 NTXV1N TK65918M BTA31 ISO7841F 4D5N60P 2SC39
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  0.00576 Datasheet PDF File

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    3SK322

Hitachi Semiconductor
Part No. 3SK322
OCR Text ...res * Low noise figure. NF = 1.0 dB typ. at f = 200 MHz * Capable of low voltage operation * Provide mini mold packages; MPAK-4R(SOT-143 va...00576 0.00562 ANG. 76.9 85.7 78.2 73.5 68.7 63.9 64.3 64.5 60.9 53.5 49.3 49.0 50.2 49.3 46.6 43.7 4...
Description Silicon N-Channel Dual Gate MOS FET

File Size 89.51K  /  12 Page

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    3SK298

HITACHI[Hitachi Semiconductor]
Part No. 3SK298
OCR Text ...res * Low noise figure. NF = 1.0 dB typ. at f = 200 MHz * Capable of low voltage operation Outline CMPAK-4 2 3 4 1 1. Source 2. Gate...00576 0.00562 ANG. 76.9 85.7 78.2 73.5 68.7 63.9 64.3 64.5 60.9 53.5 49.3 49.0 50.2 49.3 46.6 43.7 4...
Description Silicon N-Channel Dual Gate MOS FET

File Size 53.70K  /  11 Page

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    BB504C

Hitachi Semiconductor
Part No. BB504C
OCR Text ... board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 d...00576 0.00642 0.00689 0.00712 0.00765 0.00804 0.00798 0.00787 0.00785 0.00758 0.00721 0.00694 0.0071...
Description Bias Controlled Monolithic IC UHF RF Amplifier
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

File Size 66.29K  /  11 Page

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    BIC702C

Hitachi Semiconductor
Part No. BIC702C
OCR Text ...( f = 1kHz) * Low noise; NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.6 dB typ. (at f = 900 MHz) * Withstanding to ESD; Build in ESD absorbing ...00576 0.00642 0.00689 0.00712 0.00765 0.00804 0.00798 0.00787 0.00785 0.00758 0.00721 0.00694 0.0071...
Description Bias Controlled Monolithic IC UHF RF Amplifier
Bias Controlled Monolithic IC VHF/UHF RF Amplifier

File Size 62.67K  /  11 Page

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    216025 216080 216315 216800 216001 216002 216004 216005 216008 216010 216016 216050 216063 216100 216125 216160 216200 2

LITTELFUSE[Littelfuse]
Part No. 216025 216080 216315 216800 216001 216002 216004 216005 216008 216010 216016 216050 216063 216100 216125 216160 216200 216250 216400 216500 216630
OCR Text ...Form. * Available in ratings of 0.050 to 10 amperes. * High breaking capacity. (R) (R) ELECTRICAL CHARACTERISTICS: % of Ampere Rat...00576 0.00438 0.00891 0.015 0.036 0.169 0.179 0.288 0.180 0.477 1.008 1.870 2.697 6.700 14.996 27.46...
Description 5 x 20 mm Fast-Acting Fuse

File Size 162.94K  /  2 Page

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    216080P 216800P 216001P 216002P 216004P 216005P 216008P 216010P 216015P 216016P 216025P 216050P 216063P 216100P 216125P

LITTELFUSE[Littelfuse]
Part No. 216080P 216800P 216001P 216002P 216004P 216005P 216008P 216010P 216015P 216016P 216025P 216050P 216063P 216100P 216125P 216160P 216200P 216250P 216315P 216500P 216630P
OCR Text ...Form. * Available in ratings of 0.050 to 16 amperes. * High breaking capacity. * RoHS compliant and Lead-Free * Improved I2 t ELECTRICAL ...00576 0.00438 0.00891 0.015 0.036 0.169 0.179 0.288 0.180 0.477 1.008 1.870 2.697 6.700 14.966 27.46...
Description 5 x 20 mm Fast-Acting Fuse

File Size 150.27K  /  2 Page

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    3SK297

Hitachi Semiconductor
Part No. 3SK297
OCR Text ...res * Low noise figure. NF = 1.0 dB typ. at f = 200 MHz * Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2....00576 0.00562 ANG. 76.9 85.7 78.2 73.5 68.7 63.9 64.3 64.5 60.9 53.5 49.3 49.0 50.2 49.3 46.6 43.7 4...
Description Silicon N-Channel Dual Gate MOS FET

File Size 53.70K  /  11 Page

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