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  low current drain at stby mode Datasheet PDF File

For low current drain at stby mode Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B HCC4001 HCC4001B HCC_HCF4001B HCF4025BM1 HCC_HCF4025B HCF4025BEY HCC4

ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B HCC4001 HCC4001B HCC_HCF4001B HCF4025BM1 HCC_HCF4025B HCF4025BEY HCC4000 HCC4000B HCC4000BF HCC4001BF HCC4002 HCC4002B HCC4002BF HCC4025 HCC4025B HCC4025BF HCF4000BC1 HCF4000BEY HCF4000BM1 HCF4001BC1 HCF4001BEY HCF4001BM1 HCF4002BC1 HCF4002BEY HCF4002BM1 HCF4025 HCF4025B HCF4025BC1 HCC4002B-4025B HCF4002B-4025B HCF4000B-4001B HCC4000B-4001B FXXXXBM1 HCCXXXXBF 4000B 4002B
Description    NOR GatE
(289.19 k)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes
T-PNP-SI-AF PO- .75W
T-NPN- SI-PO & SW-PD 40 W 或非
MOSFET-PWR N-CH HI SPEED 或非
MOSFET; Transistor Polarity:P Channel; Continuous drain current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous drain current - 100 Deg C:7.5A; Continuous drain current - 25 Deg C:10.5A 或非
MOSFET-PWR 800V 4A 或非
NOR GatE 或非
MOSFET-PWR 500V 8A

File Size 288.46K  /  13 Page

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    Advanced Linear Devices, Inc.
Part No. AM29LV017D-120WCI AM29LV017D-120EC AM29LV017D-120WCC AM29LV017D-90FC AM29LV017D-90EI AM29LV017D-120EI
Description MOSFET; drain Source Voltage, Vds:20V; Continuous drain current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
MOSFET; drain Source Voltage, Vds:20V; Continuous drain current, Id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous drain current - 100 Deg C:66A; Continuous drain current - 25 Deg C:93A RoHS Compliant: Yes
x8 Flash EEPROM
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x8闪存EEPROM

File Size 640.33K  /  44 Page

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    PST993 PST993C PST993D PST993E PST993F PST993G PST993H PST993I PST993J PST993K PST993L PST994 PST994C PST994D PST994E PS

MITSUMI ELECTRIC CO LTD
ETC[ETC]
Mitsumi Electronics, Corp.
Part No. PST993 PST993C PST993D PST993E PST993F PST993G PST993H PST993I PST993J PST993K PST993L PST994 PST994C PST994D PST994E PST994F PST994G PST994H PST994I PST994J PST994K PST994L
Description MOSFET; Transistor Polarity:P Channel; drain Source Voltage, Vds:-20V; Continuous drain current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); current, Id max:2.2A; current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; drain Source Voltage, Vds:20V; Continuous drain current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset

File Size 93.95K  /  4 Page

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    INTERSIL[Intersil Corporation]
Part No. HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K HCS04KMSR
Description From old datasheet system
Radiation Hardened Hex Inverter
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage drain current Min, Idss:0.5mA; Zero Gate Voltage drain current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V

File Size 103.81K  /  8 Page

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    SP8855 SP8855E

Mitel Semiconductor
MITEL[Mitel Networks Corporation]
Part No. SP8855 SP8855E
Description 2.8GHz Parallel Load Professional Synthesiser
MOSFET; Transistor Polarity:N Channel; drain Source Voltage, Vds:30V; Continuous drain current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test

File Size 168.71K  /  14 Page

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    HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4006B HCC4006B HCC4006BF HCF4006

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
Part No. HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4006B HCC4006B HCC4006BF HCF4006
Description    18-STAGE STatIC SHIFT REGISTER
MOSFET; Transistor Polarity:N Channel; drain Source Voltage, Vds:60V; Continuous drain current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器

File Size 259.15K  /  11 Page

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    INTERSIL[Intersil Corporation]
Intersil, Corp.
HARRIS SEMICONDUCTOR
Part No. HCS05DMSR FN3557 HCS05MS HCS05D HCS05HMSR HCS05K HCS05KMSR
Description Inverter, Hex, Open drain, Rad-Hard, High-Speed, CMOS, Logic
From old datasheet system
JFET-N-CHANNEL SWITCH
Radiation Hardened Hex Inverter with Open drain HC/UH SERIES, HEX 1-INPUT INVERT GatE, UUC14
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage drain current Min, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; current Rating:50mA; Voltage Rating:30V

File Size 106.16K  /  7 Page

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    ST662 ST662A ST662AB ST662ABD ST662ABN ST662AC ST662ACD ST662ACN 5068

http://
STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. ST662 ST662A ST662AB ST662ABD ST662ABN ST662AC ST662ACD ST662ACN 5068
Description From old datasheet system
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY
MOSFET; Transistor Polarity:N Channel; drain Source Voltage, Vds:40V; Continuous drain current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test

File Size 130.52K  /  12 Page

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Part No. PTD.050121 PTD.250121 PTD.020721 PTD.100121
Description MOSFET; Transistor Polarity:N Channel; drain Source Voltage, Vds:20V; Continuous drain current, Id:54A; On-Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK; Continuous drain current - 100 Deg C:38A RoHS Compliant: Yes
650V Hybrid Controller IC and HEXFET Power MOSFET for Quasi-Resonant including low frequency PWM Fly-Back Converter type SMPS Applications packaged in a 7-Lead TO-247
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package DRUCKMESSUMFORMER MIKR DINANSCHL 0BIS100

File Size 329.91K  /  4 Page

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    AP1623SLA AP1623 AP1623S AP1623SA AP1623SL

ETC
ANACHIP[Anachip Corp]
Part No. AP1623SLA AP1623 AP1623S AP1623SA AP1623SL
Description Diodes, Zener; Zener Voltage Typ, Vz:12V; Vz Test current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:41-MiniDIP; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Peak Reflow Compatible (260 C):Yes
JFET; Transistor Polarity:Dual N Channel; Breakdown Voltage, V(br)gss:-40V; Zero Gate Voltage drain current Min, Idss:0.5mA; Zero Gate Voltage drain current Max, Idss:10mA; Gate-Source Cutoff Voltage Max, Vgs(off):-2.5V
PWM Control Step-Down Switching Regulator-Converter

File Size 179.78K  /  6 Page

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For low current drain at stby mode Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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