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General Electric Solid State
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Part No. |
IRF132
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Description |
N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 100V. Continuous drain current 48A.
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File Size |
160.91K /
5 Page |
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it Online |
Download Datasheet
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General Electric Solid State
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Part No. |
IRF452
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Description |
N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.
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File Size |
191.64K /
5 Page |
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it Online |
Download Datasheet
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Part No. |
PTE2030G4A PTE2100G1A PTE2030G1A PTE2005G1A
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Description |
MOSFET; Transistor Polarity:N Channel; drain Source Voltage, Vds:20V; Continuous drain current, Id:54A; On-Resistance, Rds(on):14mohm; Rds(on) Test MOSFET; drain Source Voltage, Vds:20V; Continuous drain current, Id:54A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process MOSFET; drain Source Voltage, Vds:55V; Continuous drain current, Id:10A; On-Resistance, Rds(on):140mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Package/Case:DPAK; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
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File Size |
179.37K /
5 Page |
View
it Online |
Download Datasheet
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Price and Availability
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