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For unclamped Found Datasheets File :: 13381    Search Time::1.188ms    
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    STD70N02L07 STD70N02L STD70N02L-1

STMicroelectronics
Part No. STD70N02L07 STD70N02L STD70N02L-1
OCR Text ...e pulse safe operating area for unclamped inductive loads, under the following conditions: PD(AVE) =0.5*(1.3*BVDSS *IAV ) EAS(AR) =PD(AVE) *tAV Where: IAV is the allowable current in avalanche PD(AVE) is the average power dissipation in ava...
Description N-channel 25V - 0.0068Ω - 60A - DPAK - IPAK STripFET?/a> III Power MOSFET
N-channel 25V - 0.0068Ω - 60A - DPAK - IPAK STripFET III Power MOSFET
N-channel 25V - 0.0068ヘ - 60A - DPAK - IPAK STripFET⑩ III Power MOSFET

File Size 348.69K  /  17 Page

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    STL55NH3LL

STMicroelectronics
Part No. STL55NH3LL
OCR Text ...e pulse safe operating area for unclamped inductive loads, under the following conditions: PD(AVE) =0.5*(1.3*BVDSS *IAV) EAS(AR) =PD(AVE) *tAV Where: IAV is the allowable current in avalanche PD(AVE) is the average power dissipation in aval...
Description N-channel 30 V, 0.0079 Ω, 15 A, PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET
N-channel 30 V, 0.0079 ヘ, 15 A, PowerFLAT⑩ (6x5) ultra low gate charge STripFET⑩ Power MOSFET

File Size 343.46K  /  14 Page

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    MP401507 MP4015

Toshiba Semiconductor
Part No. MP401507 MP4015
OCR Text ...ded between collector and base. unclamped inductive load energy: ES/B = 100 mJ (min) Industrial Applications Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base v...
Description High Power Switching Applications Hammer Drive, Pulse Motor Drive Inductive Load Switching

File Size 153.47K  /  4 Page

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    2SD213106 2SD2131

Toshiba Semiconductor
Part No. 2SD213106 2SD2131
OCR Text ...ded between collector and base. unclamped inductive load energy: E = 150 mJ (min) Absolute Maximum Ratings (Tc = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current C...
Description Silicon NPN Triple Diffused Type (Darlington)

File Size 143.46K  /  5 Page

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    SIHF9Z22 IRF9Z22 IRF9Z22PBF SIHF9Z22-E3

Vishay Siliconix
Part No. SIHF9Z22 IRF9Z22 IRF9Z22PBF SIHF9Z22-E3
OCR Text ... Current, Clamped L = 100 H ILM unclamped Inductive Current (Avalanche Current) IL PD Maximum Power Dissipation TC = 25 C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes ...
Description Power MOSFET

File Size 1,197.79K  /  9 Page

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    STK85007 STK850

STMicroelectronics
Part No. STK85007 STK850
OCR Text ...e pulse safe operating area for unclamped inductive loads, under the following conditions: PD(AVE) =0.5*(1.3*BVDSS *IAV) EAS(AR) =PD(AVE) *tAV Where: IAV is the allowable current in avalanche PD(AVE) is the average power dissipation in aval...
Description N-channel 30V - 0.0024Ω - 30A - PolarPAK? STripFET Power MOSFET
nullN-channel 30V - 0.0024ヘ - 30A - PolarPAK㈢ STripFET⑩ Power MOSFET

File Size 407.55K  /  16 Page

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    ZXMS6001 ZXMS6001N3 ZXMS6001N3TA

Zetex Semiconductors
Part No. ZXMS6001 ZXMS6001N3 ZXMS6001N3TA
OCR Text ... Source Current (Body Diode)(b) unclamped single pulse inductive energy Load dump protection Electrostatic Discharge (Human Body Model) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VDS VDS(SC) VIN VIN IIN No ...
Description 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET

File Size 193.80K  /  10 Page

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    ZETEX[Zetex Semiconductors]
Part No. ZXMS6002GTA ZXMS6002G
OCR Text ...ategory, DIN IEC 68-1 diode)(b) unclamped single pulse inductive energy Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Symbol R JA R JA Limit 50 28 Unit C/W C/W NOTES: (a) For a device surface mounted on 5...
Description 60V N-Channel self protected enhancement mode IntelliFET⑩ MOSFET with status indication

File Size 504.70K  /  10 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. STP200NF03 B200NF03 P200NF03 STB200NF03 STB200NF03_07 STB200NF03-1 STB200NF03T4 STB200NF0307
OCR Text ...ves the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS * IAV) EAS(AR) = PD(AVE) * tAV Where: IAV is the Allowable Current in Avalanche PD(AVE) is t...
Description N-channel 30V - 0.0032ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET

File Size 421.57K  /  18 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. STP140NF75 B140NF75 P140NF75 STB140NF75 STB140NF75-1 STB140NF75T4
OCR Text ...ves the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS * IAV) EAS(AR) = PD(AVE) * tAV Where: IAV is the allowable current in avalanche PD(AVE) is t...
Description N-CHANNEL 75V - 0.0065 ohm -120A DPAK/IPAK/TO-220 STripFET II POWER MOSFET
N-channel 75V - 0.0065 - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET
120 A, 75 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AB

File Size 518.43K  /  18 Page

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For unclamped Found Datasheets File :: 13381    Search Time::1.188ms    
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