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  tmos Datasheet PDF File

For tmos Found Datasheets File :: 674    Search Time::1.265ms    
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    MTP10N40 MTP10N40E ON2540 MTP10N40E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP10N40 MTP10N40E ON2540 MTP10N40E-D
OCR Text tmos E-FET.TM High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage tmos E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a...
Description tmos E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
tmos POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system

File Size 249.12K  /  8 Page

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    MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
Part No. MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D
OCR Text tmos E-FET.TM High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced tmos power FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a gate-to-...
Description tmos E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
tmos POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM

File Size 221.74K  /  8 Page

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    MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D
OCR Text tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced tmos E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-...
Description tmos E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
tmos POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
tmos POWER FET 12 AMPERES 60 VOLTS
From old datasheet system

File Size 239.56K  /  6 Page

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    MTP12P10 MTP12P10_D ON2547

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP12P10 MTP12P10_D ON2547
OCR Text ...r Field Effect Transistor This tmos Power FET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. * Silicon Gate for Fast Switching Speeds -- Switchi...
Description From old datasheet system
tmos POWER FET 12 AMPERES 60 VOLTS
tmos POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM

File Size 190.83K  /  6 Page

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    MTP1302 MTP1302_D ON2549 ON2548

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP1302 MTP1302_D ON2549 ON2548
OCR Text ...vated Temperature MTP1302 tmos POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mW TM CASE 221A-06 TO-220AB MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-...
Description tmos POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm
From old datasheet system

File Size 163.19K  /  8 Page

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    MTP1306 MTP1306_D ON2551 ON2550

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP1306 MTP1306_D ON2551 ON2550
OCR Text ...vated Temperature MTP1306 tmos POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM CASE 221A-06 TO-220AB MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-t...
Description tmos POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM
From old datasheet system

File Size 168.21K  /  8 Page

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    MTP15N06VL MTP15N06VL_D ON2553

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP15N06VL MTP15N06VL_D ON2553
OCR Text tmos VTM Power Field Effect Transistor tmos V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 vo...
Description tmos POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM
From old datasheet system

File Size 215.91K  /  8 Page

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    MTP15N06V ON2554

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP15N06V ON2554
OCR Text tmos V Power Field Effect Transistor tmos V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt...
Description tmos POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
From old datasheet system

File Size 163.67K  /  8 Page

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    MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D
OCR Text tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced tmos E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-...
Description tmos E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
tmos POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM
From old datasheet system

File Size 222.23K  /  8 Page

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    MTP23P06V ON2569

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTP23P06V ON2569
OCR Text tmos VTM Power Field Effect Transistor tmos V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 vo...
Description tmos POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system

File Size 192.44K  /  8 Page

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For tmos Found Datasheets File :: 674    Search Time::1.265ms    
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