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tmos Datasheet PDF File

For tmos Found Datasheets File :: 712 Search Time::2.563ms
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				ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP52N06VL MTP52N06VL_D ON2624 ON2623
OCR Text	tmos VTM Power Field Effect Transistor tmos V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 vo...
Description	tmos POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM From old datasheet system
File Size	162.64K / 8 Page	View it Online	Download Datasheet

				ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP52N06V MTP52N06V_D ON2625 ON2622
OCR Text	tmos VTM Power Field Effect Transistor tmos V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 vo...
Description	tmos POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM From old datasheet system
File Size	159.45K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTP55N06 MTP55N06Z MTP55N06Z_D ON2627 ON2626
OCR Text	tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced high voltage tmos E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also ...
Description	From old datasheet system tmos POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm
File Size	139.95K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Motorola, Inc
Part No.	MTP5N40E ON2629
OCR Text	tmos E-FET.TM High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage tmos E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a...
Description	From old datasheet system tmos POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM
File Size	258.42K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTP60N06 MTP60N06HD MTP60N06HD_D ON2633
OCR Text	...D Motorola Preferred Device tmos POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM TM D G CASE 221A-06, Style 5 TO-220AB S MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-Source Voltage Drain-Gate Voltage (RG...
Description	From old datasheet system tmos POWER FET 60 AMPERES 50 VOLTS tmos POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM
File Size	216.88K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MTP6N60E
OCR Text	tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In a...
Description	tmos POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS
File Size	153.44K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTP8N06 MTP8N06E
OCR Text	tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced tmos E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-...
Description	tmos POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
File Size	212.56K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTP8N50E MTP8N50E_D ON2651 ON2650
OCR Text	tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In a...
Description	From old datasheet system tmos POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM
File Size	154.26K / 6 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTSF1P02HD ON2655
OCR Text	...nd Storage Temperature Range tmos Single P-Channel Field Effect Transistor MTSF1P02HD Motorola Preferred Device SINGLE tmos POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM TM D CASE 846A-02, Style 1 Micro8 S Source S...
Description	SINGLE tmos POWER MOSFET SINGLE tmos POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM From old datasheet system
File Size	342.01K / 12 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTW33N10E ON2695
OCR Text	tmos E FET.TM Power Field Effect Transistor TO 247 with Isolated Mounting Hole MTW33N10E Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced tmos E-FET is designed to withstand high energy in the avalanch...
Description	tmos POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE From old datasheet system
File Size	227.85K / 8 Page	View it Online	Download Datasheet

For tmos Found Datasheets File :: 712 Search Time::2.563ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |