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				http:// SIEMENS AG
Part No.	HYB5116165BSJ-50- HYB5116165BJ-70 HYB5116165BJ-60 HYB5118165BJ-70 Q67100-Q1109 HYB5116165BJ-50
OCR Text	... * * * * * * * Single + 5 v ( 10 %) supply Low power dissipation max. 1100 active mW ( HYB5118165BSJ-50) max. 990 active mW ( HYB5118165BSJ-60) max. 880 active mW ( HYB5118165BSJ-70) max. 550 active mW ( HYB5116165BSJ-50) max. 495 act...
Description	1M x 16-Bit Dynamic RAM 1k & 4k Refresh 1M x 16-Bit Dynamic RAM 1k & 4k Refresh
File Size	272.35K / 26 Page	View it Online	Download Datasheet

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Part No.	HYB5116400BJ-50-60 Q67100-Q1087 HYB3116400BJ HYB3117400BJ-50 HYB3117400BJ-60 HYB3116400BJ-50 HYB3116400BJ-60 HYB5116400BJ-50 HYB5117400BJ-50 HYB5116400BJ-60 HYB5117400BJ-60 HYB3116400BT-60
OCR Text	...y CMOS Standby 275 11 5.5 -60 5 v 10% 12/10 220 HYB 3116400 -50 -60 3.3 v 0.3 v 12/10 180 7.2 3.6 144 HYB 5117400 -50 -60 5 v 10% 11/11 440 11 5.5 385 HYB 3117400 -50 -60 3.3 v 0.3 v 11/11 288 7.2 3.6 252 mW mW mW 4096 cycles / 64 ms...
Description	Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:41; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:22-41 4米4位动态随机存储器2k 4M×4-Bit Dynamic RAM(4M×4动RAM) 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
File Size	141.95K / 26 Page	View it Online	Download Datasheet

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Part No.	HYB5116400BJ-50- Q67100-Q1049 Q67100-Q1051 HYB5116400BJ-70 HYB5116400BJ-50 HYB5116400BJ-60
OCR Text	...s ns ns ns * * Single + 5 v ( 10 %) supply Low power dissipation max. 550 active mW (-50 version) max. 495 active mW (-60 version) max. 440 active mW (-70 version) 11 mW standby (TTL) 5.5. mW standby (MOS) Output unlatched at cycle en...
Description	4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 4M x 4-Bit Dynamic RAM 4米4位动态随机存储器
File Size	328.36K / 26 Page	View it Online	Download Datasheet

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Part No.	HYB5117400BJ-50- Q67100-Q1088 HYB5117400BJ-50 HYB5117400BJ-60 HYB5117400BJ-70
OCR Text	...s ns ns ns * * Single + 5 v ( 10 %) supply Low power dissipation max. 660 active mW (-50 version) max. 605 active mW (-60 version) max. 550 active mW (-70 version) 11 mW standby (TTL) 5.5. mW standby (MOS) Output unlatched at cycle en...
Description	Connector Cover; Leaded Process Compatible:No; Enclosure Color:Gray; For Use With:SB 350 Connector; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 4米4位动态随机存储器 4M x 4-Bit Dynamic RAM
File Size	328.19K / 26 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS A G
Part No.	HYB5117800BSJ-50- Q67100-Q1092 Q67100-Q1093 HYB3117800BSJ-50 HYB3117800BSJ-60 HYB5117800BSJ-60
OCR Text	...HYB3117800 -50 288 -60 3.3 0.3 v 252 7.2 3.6 mW mW mW * Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and test mode * All inputs, outputs and clocks fully TTL (5 v versions) and Lv-TTL (3.3 v v...
Description	2M x 8 - Bit Dynamic RAM 2k Refresh 2M×8-Bit Dynamic RAM (Fast Page Mode)(2M×8动态RAM(快速页面模)
File Size	181.33K / 23 Page	View it Online	Download Datasheet

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Part No.	HYB5117805BSJ-50- HYB5117805BJ-70 HYB5117805BJ-50 HYB5117805BJ-60
OCR Text	...s ns ns ns * * Single + 5 v ( 10 %) supply Low power dissipation max. 660 mW active (-50 version) max. 605 mW active (-60 version) max. 550 mW active (-70 version) 11 mW standby (TTL) 5.5. mW standby (MOS) Read, write, read-modify-wri...
Description	2M×8 - Bit Dynamic RAM 2k Refresh 2M x 8 - Bit Dynamic RAM 2k Refresh
File Size	260.97K / 25 Page	View it Online	Download Datasheet

				Siemens Semiconductor Group SIEMENS AG
Part No.	HYB5118160BSJ-50- HYB3118160BSJ-50 HYB3118160BSJ-60 HYB5118160BSJ-60 Q67100-Q1073 HYB5118160BSJ-50
OCR Text	...y CMOS Standby 715 11 5.5 -60 5 v 10 % 10/10 632 HYB3118160 -50 -60 3.3 v 0.3 v 10/10 468 7.2 3.6 414 mW mW mW 1024 cycles / 16 ms * Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh * All i...
Description	1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷 1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
File Size	194.74K / 24 Page	View it Online	Download Datasheet

				SIEMENS AG
Part No.	HYB514100BJ-50- Q67100-Q759 Q67100-Q971
OCR Text	... 50 13 25 95 35 * Single + 5 v ( 10 %) supply with a built-in vBB generator * Low power dissipation max. 660 mW active (-50 version) max. 605 mW active (-60 version) * Standby power dissipation: 11 mW max. standby (TTL) 5.5 mW max. stand...
Description	4M × 1-Bit Dynamic RAM(4M × 1位动态RAM) 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
File Size	111.19K / 21 Page	View it Online	Download Datasheet

				SIEMENS AG
Part No.	HYB514171BJ-50- Q67100-Q727 Q67100-Q2021 HYB514171BJ-60
OCR Text	...0 ns (-60 version) Single + 5.0 v ( 10 %) supply with a built-in vBB generator Low Power dissipation max. 1045 mW active (-50 version) max. 935 mW active (-60 version) * Standby power dissipation 11 mW standby (TTL) 5.5 mW max. standby (CMO...
Description	256k x 16-Bit Dynamic RAM 256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
File Size	184.28K / 23 Page	View it Online	Download Datasheet

				SIEMENS AG
Part No.	HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514175BJ-60
OCR Text	...40 MHz (-60 version) Single + 5 v ( 10 %) supply with a built-in vBB generator * Low Power dissipation max. 1100 mW active (-50 version) max. 1045 mW active (-55 version) max. 935 mW active (-60 version) * Standby power dissipation 11 mW st...
Description	256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM 256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
File Size	180.37K / 22 Page	View it Online	Download Datasheet

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