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  80ns-- Datasheet PDF File

For 80ns-- Found Datasheets File :: 798    Search Time::1.078ms    
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    Macronix International Co., Ltd.
Part No. 23L3216-80
OCR Text ...ed package grade mx23l3216ti-80 80ns 56 pin tsop industrial mx23l3216ti-10 100ns 56 pin tsop industrial mx23l3216ti-12 120ns 56 pin tsop industrial mx23l3216xi-80 80ns 64 ball mini bga industrial mx23l3216xi-10 100ns 64 ball mini bga indust...
Description 32M-BIT MASK ROM 32兆位掩膜ROM

File Size 35.75K  /  5 Page

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    Intersil
Part No. CD4050BMS
OCR Text ... 10v, vdd = 10v 1, 2, 3 +25 o c-80ns propagation delay tphl vin = 15v, vdd = 5v 1, 2, 3 +25 o c-100ns vin = 15v, vdd = 15v 1, 2, 3 +25 o c-30ns propagation delay tplh vin = 15v, vdd = 5v 1, 2, 3 +25 o c-80ns vin = 15v, vdd = 15v 1, 2, 3 +25...
Description Buffer/Converter, Logic Level Conversion, Hex, (UnBuffered), Rad-Hard, CMOS, Logic

File Size 115.86K  /  8 Page

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    K8D6316UBM

Samsung semiconductor
Part No. K8D6316UBM
OCR Text ...her bank. access times of 70ns, 80ns and 90ns are available for the device. the device s fast access times allow high speed microprocessors to operate without wait states. the device performs a program operation in units of 8 bits (byte) o...
Description (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory

File Size 671.96K  /  48 Page

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    MT28C3224P20 MT28C3224P18

MICRON[Micron Technology]
Part No. MT28C3224P20 MT28C3224P18
OCR Text ... access time Flash access time: 80ns @ 1.80V F_VCC SRAM access time: 85ns @ 1.80V S_VCC * Page Mode read access Interpage read access: 80ns @ 1.80V F_VCC Intrapage read access: 30ns @ 1.80V F_VCC * Low power consumption * Enhanced suspend o...
Description FLASH AND SRAM COMBO MEMORY

File Size 472.98K  /  42 Page

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    OKI
Part No. MS52C1162A MS52C1161A
OCR Text ...ess time : 100nS MAX (Vcc=2.7V) 80nS MAX (Vcc=3.0V) * Common address inputs and data inputs / outputs for SRAM and OTP * Input / Output LVTTL compatible * 3-state output * Data retention available at power supply voltage 1.5V for SRAM * Pac...
Description 65,536-Word X 16-Bit or 131,072-Word X 8-Bit STATIC RAM 1,048,576-Word X 16-Bit or 2,097,152-Word X 8-Bit One Time PROM
131,072-Word X 8-Bit STATIC RAM 2,097,152-Word X 8-Bit One Time PROM
From old datasheet system

File Size 123.84K  /  18 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K9F1608W0A-TCB0 K9F1608W0A-TIB0
OCR Text ... in the page can be read out at 80ns cycle time per byte. the i/o pins serve as the ports for address and data input/out- put as well as command inputs. the on-chip write controller automates all program and erase system functions, includin...
Description    2M x 8 Bit NAND Flash Memory
TV 37C 37#16 PIN RECP 200万8位NAND闪存
TV 128C 128#22D SKT RECP

File Size 446.53K  /  25 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K9F8008W0M-TCB0 K9F8008W0M-TIB0 K9K1208D0C
OCR Text ... in the page can be read out at 80ns cycle time per byte. the i/o pins serve as the ports for address and data input/out- put as well as command inputs. the on-chip write controller automates all program and erase system functions, includin...
Description Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight 100万8位NAND快闪记忆

File Size 448.26K  /  25 Page

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    MT28F322D18

Micron Technology, Inc.
Part No. MT28F322D18
OCR Text ...ity)  random access time: 70ns/80ns @ 1.70v v cc  burst mode read access (mt28f322d20) ? max clock rate: 54 mhz ( t clk = 18.5ns) ? burst latency: 70ns @ 1.80v v cc and 54 mhz ? t aclk: 17ns @ 1.80v v cc and 54 mhz  page mode read acce...
Description FLASH MEMORY 闪存

File Size 503.30K  /  44 Page

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    MT28F200B5

Micron Technology
Part No. MT28F200B5
OCR Text ...g ? address access times: 60ns, 80ns ? 100,000 erase cycles ? industry-standard pinouts ? inputs and outputs are fully ttl-compatible ? automated write and erase algorithm ? two-cycle write/erase sequence ? byte- or word-wide read and write...
Description (MT28F002B5 / MT28F200B5) FLASH MEMORY

File Size 833.18K  /  31 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K8D6316UBM-LC09 K8D6316UBM-LI09 K8D6316UBM-PI07 K8D6316UBM-PI08 K8D6316UBM-PI09 K8D6316UTM-DC09 K8D6316UTM-FC09 K8D6316UTM-DC07 K8D6316UTM-FI08 K8D6316UTM-FI07 K8D6316UTM-DI07 K8D6316UTM-DI09 K8D6316UTM-DI08 K8D6316UTM-DC08 K8D6316UTM-FC08 K8D6316UTM-FC07 K8D6316UBM-DC09 K8D6316UBM-DI09 K8D6316UBM-DC08 K8D6316UBM-DI08 K8D6316UBM-DI07 K8D6316UBM-PC09 K8D6316UBM-FI09 K8D6316UBM-FI08 K8D6316UBM-LI08 K8D6316UBM-FI07 K8D6316UBM-PC07 K8D6316UBM-TI09 K8D6316UBM-TC08 K8D6316UBM-TI08 K8D6316UBM-PC08 K8D6316UBM-LC08 K8D6316UBM-FC08 K8D6316UBM-FC09 K8D6316UBM-LC07 K8D6316UBM-LI07 K8D6316UBM-TC07 K8D6316UBM-TC09 K8D6316UBM-TI07
OCR Text ...her bank. access times of 70ns, 80ns and 90ns are available for the device. the device s fast access times allow high speed microprocessors to operate without wait states. the device performs a program operation in units of 8 bits (byte) o...
Description 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory

File Size 656.73K  /  48 Page

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