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For 80ns-- Found Datasheets File :: 798    Search Time::2.172ms    
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    SAMSUNG[Samsung semiconductor]
Part No. K8D1716UTC K8D1716UTC-PC07 K8D1716UBC K8D1716UTC-TI09 K8D1716U K8D1716UBC-DC07 K8D1716UBC-DC08 K8D1716UBC-DC09 K8D1716UBC-DI07 K8D1716UBC-DI08 K8D1716UBC-DI09 K8D1716UBC-FC07 K8D1716UBC-FC08 K8D1716UBC-FC09 K8D1716UBC-FI07 K8D1716UBC-FI08 K8D1716UBC-FI09 K8D1716UBC-PC07 K8D1716UBC-PC08 K8D1716UBC-PC09 K8D1716UBC-PI07 K8D1716UBC-PI08 K8D1716UBC-PI09 K8D1716UBC-TC07 K8D1716UBC-TC08 K8D1716UBC-TC09 K8D1716UBC-TI07 K8D1716UBC-TI08 K8D1716UBC-TI09 K8D1716UTC-DC07 K8D1716UTC-DC08 K8D1716UTC-DC09 K8D1716UTC-DI07 K8D1716UTC-DI08 K8D1716UTC-DI09 K8D1716UTC-FC07 K8D1716UTC-FC08 K8D1716UTC-FC09 K8D1716UTC-FI07 K8D1716UTC-FI08 K8D1716UTC-FI09 K8D1716UTC-PC08 K8D1716UTC-PC09 K8D1716UTC-PI07 K8D1716UTC-PI08 K8D1716UTC-PI09 K8D1716UTC-TC07 K8D1716UTC-TC08 K8D1716UTC-TC09 K8D1716UTC-TI07 K8D1716UTC-TI08
OCR Text ...her bank. Access times of 70ns, 80ns and 90ns are available for the device. The devices fast access times allow high speed microprocessors to operate without wait states. The device performs a program operation in units of 8 bits (Byte) or ...
Description 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
File Size 663.73K  /  41 Page

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    K8D6316UTM-PC07 K8D638UTM-PC07 K8D6X16UTM06 K8D6X16UBM K8D6316UBM-YI07 K8D6316UBM-YI09 K8D6316UBM-DC07 K8D6316UBM-DC08 K

SAMSUNG[Samsung semiconductor]
Part No. K8D6316UTM-PC07 K8D638UTM-PC07 K8D6X16UTM06 K8D6X16UBM K8D6316UBM-YI07 K8D6316UBM-YI09 K8D6316UBM-DC07 K8D6316UBM-DC08 K8D6316UBM-DC09 K8D6316UBM-DI07 K8D6316UBM-DI08 K8D6316UBM-DI09 K8D6316UBM-FC07 K8D6316UBM-FC08 K8D6316UBM-FC09 K8D6316UBM-FI07 K8D6316UBM-FI08 K8D6316UBM-FI09 K8D6316UBM-LC07 K8D6316UBM-LC08 K8D6316UBM-LC09 K8D6316UBM-LI07 K8D6316UBM-LI08 K8D6316UBM-LI09 K8D6316UBM-PC07 K8D6316UBM-PC08 K8D6316UBM-PC09 K8D6316UBM-PI07 K8D6316UBM-PI08 K8D6316UBM-PI09 K8D6316UBM-TC07 K8D6316UBM-TC08 K8D6316UBM-TC09 K8D6316UBM-TI07 K8D6316UBM-TI08 K8D6316UBM-TI09 K8D6316UBM-YC07 K8D6316UBM-YC08 K8D6316UBM-YC09 K8D6316UBM-YI08 K8D6316UTM-DC07 K8D6316UTM-DC08 K8D6316UTM-DC09 K8D6316UTM-DI07 K8D6316UTM-DI08 K8D6316UTM-DI09 K8D6316UTM-FC07 K8D6316UTM-FC08 K8D6316UTM-FC09 K8D6316UTM-FI07 K8D6316UTM-FI08 K8D6316UTM-FI09 K8D6316UTM-LC07 K8D6316UTM-LC08 K8D6316UTM-LC09 K8D6316UTM-LI07 K8D6316UTM-LI08 K8D6316UTM-LI09 K8D6316UTM-PC08 K8D6316UTM-PC09 K8D6316UTM-PI07 K8D6316UTM-PI08 K8D6316UTM-PI09 K8D6316UTM-TC07 K8D6316UTM-TC08 K8D6316UTM-TC09 K8D6316UTM-TI07 K8D6316UTM-TI08 K8D6316UTM-TI09 K8D6316UTM-YC07 K8D6316UTM-YC08 K8D6316UTM-YC09 K8D6316UTM-YI07 K8D6316UTM-YI08 K8D6316UTM-YI09 K8D638UBM
OCR Text ...her bank. Access times of 70ns, 80ns and 90ns are available for the device. The devices fast access times allow high speed microprocessors to operate without wait states. The device performs a program operation in units of 8 bits (Byte) or ...
Description 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
File Size 745.71K  /  48 Page

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    K8D6316UTM-PC07 K8D6316UTM-PC08 K8D6316UTM-PC09 K8D638UBM-PC07 K8D638UBM-PC08 K8D638UBM-PC09 K8D638UTM-PC07 K8D638UTM-PC

SAMSUNG[Samsung semiconductor]
Part No. K8D6316UTM-PC07 K8D6316UTM-PC08 K8D6316UTM-PC09 K8D638UBM-PC07 K8D638UBM-PC08 K8D638UBM-PC09 K8D638UTM-PC07 K8D638UTM-PC08 K8D638UTM-PC09 K8D6X16UTM K8D6316UTM-DC07 K8D6316UTM-DC08 K8D6316UTM-DC09 K8D6316UTM-DI07 K8D6316UTM-DI08 K8D6316UTM-DI09 K8D6316UTM-FC07 K8D6316UTM-FC08 K8D6316UTM-FC09 K8D6316UTM-FI07 K8D6316UTM-FI08 K8D6316UTM-FI09 K8D6316UTM-LC07 K8D6316UTM-LC08 K8D6316UTM-LC09 K8D638UTM-TI09 K8D6316UBM-DC07 K8D6316UBM-DC08 K8D6316UBM-DC09 K8D6316UBM-DI07 K8D6316UBM-DI08 K8D6316UBM-DI09 K8D6316UBM-FC07 K8D6316UBM-FC08 K8D6316UBM-FC09 K8D6316UBM-FI07 K8D6316UBM-FI08 K8D6316UBM-FI09 K8D6316UBM-LC07 K8D6316UBM-LC08 K8D6316UBM-LC09 K8D6316UBM-LI07 K8D6316UBM-LI08 K8D6316UBM-LI09 K8D6316UBM-PC07 K8D6316UBM-PC08 K8D6316UBM-PC09 K8D6316UBM-PI07 K8D6316UBM-PI08 K8D6316UBM-PI09 K8D6316UBM-TC07 K8D6316UBM-TC08 K8D6316UBM-TC09 K8D6316UBM-TI07 K8D6316UBM-TI08 K8D6316UBM-TI09 K8D6316UTM-LI07 K8D6316UTM-LI08 K8D6316UTM-LI09 K8D6316UTM-PI07 K8D6316UTM-PI08 K8D6316UTM-PI09 K8D6316UTM-TC07 K8D6316UTM-TC08 K8D6316UTM-TC09 K8D6316UTM-TI07 K8D6316UTM-TI08 K8D6316UTM-TI09 K8D638UBM-DC07 K8D638UBM-DC08 K8D638UBM-DC09 K8D638UBM-DI07 K8D638UBM-DI08 K8D638UBM-FC07 K8D638UBM-FC08 K8D638UBM-FC09 K8D6
OCR Text ...her bank. Access times of 70ns, 80ns and 90ns are available for the device. The devices fast access times allow high speed microprocessors to operate without wait states. The device performs a program operation in units of 8 bits (Byte) or ...
Description 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
File Size 636.98K  /  48 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K8D1716U K8D1716UT K8D1716UB K8D1716UBB-TC07 K8D1716UBB K8D1716UBB-TC08 K8D1716UBB-TC09 K8D1716UTB-TC07 K8D1716UTB K8D1716UTB-TC08 K8D1716UTB-TC09 K8D1716UTB-YI09 K8D1716UBB-TI07 K8D1716UBB-TI08 K8D1716UBB-TI09 K8D1716UBB-YC07 K8D1716UBB-YC08 K8D1716UBB-YC09 K8D1716UBB-YI07 K8D1716UBB-YI08 K8D1716UBB-YI09 K8D1716UTB-TI07 K8D1716UTB-TI08 K8D1716UTB-TI09 K8D1716UTB-YC07 K8D1716UTB-YC09 K8D1716UTB-YI07 K8D1716UTB-YI08 K8D1716UTB-YC08
OCR Text ...her bank. Access times of 70ns, 80ns and 90ns are available for the device. The devices fast access times allow high speed microprocessors to operate without wait states. The device performs a program operation in units of 8 bits (Byte) or ...
Description 16M Dual Bank NOR Flash Memory
16M BIT (2M X8/1M X16) DUAL BANK NOR FLASH MEMORY
File Size 479.04K  /  40 Page

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    MT28F322D20FH-805B MT28F322D18FH-704BET MT28F322D18FH-704TET MT28F322D18FH-705BET MT28F322D18FH-705TET MT28F322D18FH-70B

MICRON[Micron Technology]
Part No. MT28F322D20FH-805B MT28F322D18FH-704BET MT28F322D18FH-704TET MT28F322D18FH-705BET MT28F322D18FH-705TET MT28F322D18FH-70BET MT28F322D18FH-70TET MT28F322D18FH-804BET MT28F322D18FH-804TET MT28F322D18FH-805BET MT28F322D18FH-805TET MT28F322D18FH-80BET MT28F322D18FH-80TET MT28F322D20FH-80TET MT28F322D20 MT28F322D20FH-704BET MT28F322D20FH-704TET MT28F322D20FH-705BET MT28F322D20FH-705TET MT28F322D20FH-70BET MT28F322D20FH-70TET MT28F322D20FH-804BET MT28F322D20FH-804TET MT28F322D20FH-805BET MT28F322D20FH-805TET MT28F322D20FH-80BET
OCR Text ...ity) * Random access time: 70ns/80ns @ 1.70V VCC * Burst Mode read access (MT28F322D20) - MAX clock rate: 54 MHz (tCLK = 18.5ns) - Burst latency: 70ns @ 1.80V VCC and 54 MHz - tACLK: 17ns @ 1.80V VCC and 54 MHz * Page Mode read access1 - Ei...
Description FLASH MEMORY
File Size 494.67K  /  44 Page

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    GM71VS16163CL

Hynix Semiconductor
Part No. GM71VS16163CL
OCR Text ... Access Time 50ns 60ns 70ns 80ns 50ns 60ns 70ns 80ns Package 400 Mil 42 Pin Plastic SOJ 400 Mil 44(50) Pin Plastic TSOP II (Normal Type) Absolute Maximum Ratings* Symbol TA TSTG VT VCC IOUT PT Parameter Ambient Temperature unde...
Description (GM71VS16163CL / GM71V16163C) 1M x 16-Bit CMOS DRAM
File Size 152.11K  /  13 Page

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    MX23C8000 MX23C8000MC-10 MX23C8000MC-12 MX23C8000MC-15 MX23C8000MC-20 MX23C8000PC-10 MX23C8000PC-12 MX23C8000PC-15 MX23C

Macronix International Co., Ltd.
Part No. MX23C8000 MX23C8000MC-10 MX23C8000MC-12 MX23C8000MC-15 MX23C8000MC-20 MX23C8000PC-10 MX23C8000PC-12 MX23C8000PC-15 MX23C8000PC-20 MX23C8000QC-10 MX23C8000QC-12 MX23C8000QC-15 MX23C8000QC-20 MX23C8000TC-10 MX23C8000TC-12 MX23C8000TC-15 MX23C8000TC-20
OCR Text ...s Note 3 Note 4 tACE tAOE 100ns 80ns 120ns 80ns 150ns 80ns 200ns 100ns SYMBOL tCYC tAA tOH MIN. MAX. 23C8000-12 MIN. 120ns 0ns MAX. 120ns 23C8000-15 MIN. 150ns 0ns MAX. 150ns 23C8000-20 MIN. 200ns 0ns MAX. 200ns CONDITIONS 100ns 0ns 100n...
Description 8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 150 ns, PDIP32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 120 ns, PDIP32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 200 ns, PQCC32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 100 ns, PQCC32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 120 ns, PQCC32
File Size 904.73K  /  10 Page

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