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1.2ghz Datasheet PDF File

For 1.2ghz Found Datasheets File :: 323 Search Time::2.828ms
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				Excelics Semiconductor, Inc.
Part No.	EFA025A
OCR Text	... 1db compression f=12ghz 21 p 1db vds=8v, ids=50% idss f=18ghz 19 21 dbm gain at 1db compression f=12ghz 11 g 1db vds=8v, ids=50% idss ...
Description	6-12V low distortion GaAs power FET
File Size	32.78K / 3 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EFA018A
OCR Text	... 11.5db typical power gain at 12ghz typical 1.1db noise figure and 10.5db associated gain at 12ghz 0.3 x 180 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial doping profile provides high pow...
Description	Low Distortion GaAs Power FET
File Size	99.47K / 2 Page	View it Online	Download Datasheet

				Execlics
Part No.	EFA080A-100F
OCR Text	...at 1db compression f=12ghz vds=8v, ids=50% idss 24.0 26.0 dbm g 1db gain at 1db compression f=12ghz vds=8v, ids=50% idss 6.0 7.5 d...
Description	Low Distortion GaAs Power FET
File Size	55.71K / 2 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Excelics Semiconductor
Part No.	EFA080A-100F
OCR Text	...WER 7.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EFA080A-100F Low Distortion GaAs Power FET 5...
Description	Low Distortion GaAs Power FET
File Size	26.15K / 2 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. Excelics Semiconductor, Inc. ETC List of Unclassifed Manufacturers
Part No.	EFA080A-70
OCR Text	...ER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 20 D S S 40 G All Dimensions In ...
Description	Low Distortion GaAs Power FET
File Size	18.68K / 2 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Excelics Semiconductor, Inc.
Part No.	EFA080A
OCR Text	12GHz 0.3 X 800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 15mA PER BIN RANGE 50 D EFA080A Low Distortion GaAs Power FET ...
Description	8-12V low distortion GaAs power FET
File Size	28.54K / 2 Page	View it Online	Download Datasheet

				Transcom, Inc.
Part No.	TC1301
OCR Text	... = 4 v, i ds = 50 ma, f = 12ghz 0.8 1.0 db g a associated gain at v ds = 4 v, i ds = 50 ma, f = 12ghz 9 10 db p 1db output power at 1db gain compression point , f = 12ghz v ds = 6 v, i ds = 80 ma 23.5 24.5 d...
Description	Low Noise and Medium Power GaAs FETs
File Size	247.47K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semicon... Mitsubishi Electric Semiconductor
Part No.	MGF4934AM07 MGF4934AM
OCR Text	... FEATURES Low noise figure @ f=12GHz NFmin. = 0.55dB (Typ.) High associated gain @ f=12GHz Gs = 12.5dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICATION S to Ku band low noise amplifiers Not to be reproduced or disclosed without p...
Description	SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
File Size	132.86K / 6 Page	View it Online	Download Datasheet

				Transcom, Inc.
Part No.	TC1201
OCR Text	... = 4 v, i ds = 25 ma , f = 12ghz 0.5 0.7 db g a associated gain at v ds = 4 v, i ds = 25 ma, f = 12ghz 10 12 db p 1db output power at 1db gain compression point , f = 12ghz v ds = 6 v, i ds = 40 ma 20.5 2...
Description	Low Noise and Medium Power GaAs FETs
File Size	247.30K / 6 Page	View it Online	Download Datasheet

For 1.2ghz Found Datasheets File :: 323 Search Time::2.828ms
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