640v pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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640v Datasheet PDF File

For 640v Found Datasheets File :: 379 Search Time::2.015ms
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				SGS Thomson Microelectronics
Part No.	STP4NC80ZFP
OCR Text	...ns q g total gate charge v dd = 640v, i d = 4a, v gs = 10v 27 36.5 nc q gs gate-source charge 7 nc q gd gate-drain charge 10 nc symbol parameter test condit ions min. typ. max. unit t r(voff) off-voltage rise time v dd = 640v, i d =4a, r g ...
Description	N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP I2PAK ZENER PROTECTED POWERMESH III MOSFET
File Size	124.18K / 11 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STW9NB80
OCR Text	...s q g total gate charge v dd = 640v, i d = 9 a, v gs = 10v, r g =4.7 w 53 74 nc q gs gate-source charge 13 nc q gd gate-drain charge 25 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 640v,...
Description	N-CHANNEL 900V - 0.85 OHM - 9.3A - TO-247 POWERMESH MOSFET
File Size	263.48K / 8 Page	View it Online	Download Datasheet

				Fuji
Part No.	2SK3264-01MR
OCR Text	...0 vcc=160v 400v 640v 160v 400v vcc=640v vgs [v] vds [v] typical gate charge characteristic vgs=f(qg):id=7a,tc=25 o c qg [nc] 0 5 10 15 20 25 30 35 40 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -2 10 -1 10 0 10 1 tch=25 o c typ. forw...
Description	MOS-FET N-Channel enhanced
File Size	148.02K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	SSW/I2N80A
OCR Text	...30v v gs =-30v v ds =800v v ds =640v,t c =125 o c v gs =10v,i d =0.85a * v ds =50v,i d =0.85a v dd =400v,i d =2a, r g =16 w see fig 13 v ds =640v,v gs =10v, i d =2a see fig 6 & fig 12 drain-to-source leakage current v gs =...
Description	Advanced Power MOSFET
File Size	260.92K / 7 Page	View it Online	Download Datasheet

				KODENSHI KOREA CORP.
Part No.	STK0380D
OCR Text	...800v, v gs =0v - - 10 ua v ds =640v, t c =125 ? c - - 100 ua gate leakage current i gss v ds =0v, v gs = ? 30v - - ? 100 na drain-source on-resistance r ds(on) v gs =10v, i d =1.5a - 3.36 4.2 ? forward transfer conductance (...
Description	SWWITCHINNG REGGULATOOR APPLICATIOON
File Size	370.19K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP
Part No.	SSW5N80A
OCR Text	...30v v gs =-30v v ds =800v v ds =640v,t c =125 o c v gs =10v,i d =2.5a * v ds =50v,i d =2.5a v dd =400v,i d =5a, r g =13.6 w see fig 13 v ds =640v,v gs =10v, i d =5a see fig 6 & fig 12 drain-to-source leakage current v gs...
Description	5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	256.33K / 7 Page	View it Online	Download Datasheet

				SemiHow Co.,Ltd.
Part No.	HFH7N80
OCR Text	...? q g total gate charge v ds = 640v , i d = 7.0 a, v gs = 10 v (note 4,5) -- 35 45 nc q gs gate - source charge -- 10 -- nc q gd gate - drain charge -- 13 -- nc semihow rev.a0,mar 2010 hfh7n80 figure 1. on region characteristics figur...
Description	800V N-Channel MOSFET
File Size	1,148.27K / 8 Page	View it Online	Download Datasheet

				GOOD-ARK Electronics
Part No.	SSFP8N80
OCR Text	...ge current 100 a v ds =640v,v gs =0v,t j =150 ? c gate-to-source forward leakage 100 v gs =30v i gss gate-to-source reverse leakage -100 na v gs =-30v q g total gate charge 35 45 q gs gate-to-source c...
Description	StarMOST Power MOSFET
File Size	122.77K / 2 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STP3NA80
OCR Text	... on turn-on current slope v dd =640v i d =4a r g =47 w v gs =10v (see test circuit, figure 5) 170 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 640 v i d =4a v gs =10v 44 7 18 65 nc nc nc switching off ...
Description	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
File Size	235.58K / 10 Page	View it Online	Download Datasheet

For 640v Found Datasheets File :: 379 Search Time::2.015ms
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