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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
MP4015
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| OCR Text |
...ded between collector and base. unclamped inductive load energy: ES/B = 100 mJ (min)
Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base curr... |
| Description |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.
TOSHIBA Power Transistor Module
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| File Size |
129.83K /
4 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7278
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| OCR Text |
...50 tAV
0V
tP
FIGURE 4. unclamped ENERGY TEST CIRCUIT
FIGURE 5. unclamped ENERGY WAVEFORMS
VDD
tON td(ON)
tOFF td(OFF) tr tf 90%
RL VDS VGS = 10V DUT 0V RGS
VDS
90%
10%
10%
90% VGS 10% 50% PULSE WIDTH 5... |
| Description |
4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET
4A/ 250V/ 0.700 Ohm/ Rad Hard/ N-Channel Power MOSFET
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| File Size |
38.88K /
7 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7275
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| OCR Text |
...50 tAV
0V
tP
FIGURE 4. unclamped ENERGY TEST CIRCUIT
FIGURE 5. unclamped ENERGY WAVEFORMS
VDD
tON td(ON)
tOFF td(OFF) tr tf 90%
RL VDS VGS = 10V DUT 0V RGS
VDS
90%
10%
10%
90% VGS 10% 50% PULSE WIDTH 5... |
| Description |
5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET
5A/ 200V/ 0.500 Ohm/ Rad Hard/ N-Channel Power MOSFET
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| File Size |
38.53K /
7 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
ISL9N327AD3ST FAIRCHILDSEMICONDUCTORCORP-ISL9N327AD3ST
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| OCR Text |
...Time Fall Time Turn-Off Time
unclamped Inductive Switching
tAV Avalanche Time ID = 2.7A, L= 3mH 180 s
Drain-Source Diode Characteristics
VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = ... |
| Description |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
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| File Size |
182.17K /
11 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
ISL9N318AD3ST
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| OCR Text |
...Time Fall Time Turn-Off Time
unclamped Inductive Switching
tAV Avalanche Time ID = 2.7 A, 3.0 mH 180 s
Drain-Source Diode Characteristics
VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD =... |
| Description |
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
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| File Size |
181.72K /
11 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HUFA75829D3S HUFA75829D3 HUFA75829D3ST
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| OCR Text |
...es AN9321 and AN9322. FIGURE 6. unclamped INDUCTIVE SWITCHING CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
35 30 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 TJ = 175oC TJ = -55oC TJ = 25oC ... |
| Description |
18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETs
18A, 150V, 0.110 Ohm, N-Channel, UltraFETPower MOSFETs
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| File Size |
189.57K /
10 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HUFA75652G3
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| OCR Text |
...S SAFE OPERATING AREA FIGURE 6. unclamped INDUCTIVE SWITCHING CAPABILITY
200
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A)
200 VGS = 20V VGS = 10V 150
VGS = 7V VGS = 6V VGS =5V
ID, DRAIN CURRENT (... |
| Description |
75A, 100V, 0.008 Ohm, N-Channel UltraFETPower MOSFET
75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET
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| File Size |
192.92K /
10 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HUFA75645S3S HUFA75645P3
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| OCR Text |
...S SAFE OPERATING AREA FIGURE 6. unclamped INDUCTIVE SWITCHING CAPABILITY
150 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A)
150 VGS = 20V VGS = 10V 120 VGS =5V 90 VGS = 7V VGS = 6V
ID, DRAIN CURRENT (A)
... |
| Description |
75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs
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| File Size |
152.88K /
10 Page |
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it Online |
Download Datasheet |
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