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  1.2ghz Datasheet PDF File

For 1.2ghz Found Datasheets File :: 324    Search Time::1.859ms    
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    TC1201

Transcom, Inc.
Part No. TC1201
OCR Text ... = 4 v, i ds = 25 ma , f = 12ghz 0.5 0.7 db g a associated gain at v ds = 4 v, i ds = 25 ma, f = 12ghz 10 12 db p 1db output power at 1db gain compression point , f = 12ghz v ds = 6 v, i ds = 40 ma 20.5 2...
Description Low Noise and Medium Power GaAs FETs

File Size 247.30K  /  6 Page

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    TC1201V

Transcom, Inc.
Part No. TC1201V
OCR Text ...s = 4 v, i ds = 25 ma, f = 12ghz 0.5 0.7 db g a associated gain at v ds = 4 v, i ds = 25 ma, f = 12ghz 11 13 db p 1db output power at 1db gain compression point, f = 12ghz v ds = 6 v, i ds = 40 ma 20.5 21.5 dbm ...
Description Low Noise and Medium Power GaAs FETs

File Size 118.26K  /  2 Page

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    TC1404N

Transcom, Inc.
Part No. TC1404N
OCR Text ...gain compression point , f = 12ghz v ds = 8 v, i ds = 120 ma 26.5 27 dbm g l linear power gain, f = 12ghz v ds = 8 v, i ds = 120 ma 11 db ip3 intercept point of the 3 rd -order intermodulation, f = 12ghz v ds =8v, i...
Description 0.5W High Linearity and High Efficiency GaAs Power FETs

File Size 68.54K  /  3 Page

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    TC1301

List of Unclassifed Manufacturers
ETC
TRANSCOM
Part No. TC1301
OCR Text ... at VDS = 4 V, IDS = 50 mA, f = 12GHz Associated Gain at VDS = 4 V, IDS = 50 mA, f = 12GHz Output Power at 1dB Gain Compression Point , f = 12GHz VDS = 6 V, IDS = 80 mA Linear Power Gain, f = 12GHz VDS = 6 V, IDS = 80 mA Saturated Drain-Sou...
Description Low Noise and Medium Power GaAs FETs

File Size 204.99K  /  6 Page

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    FSX017LG

Eudyna Devices Inc
Part No. FSX017LG
OCR Text ...medium power applications up to 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers. Fujitsu's stringent Quality Assurance Program assures the highest reliability and c...
Description General Purpose GaAs FET

File Size 76.30K  /  4 Page

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    FSX017X

Eudyna Devices Inc
Part No. FSX017X
OCR Text ...medium power applications up to 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers or oscillators. Fujitsu's stringent Quality Assurance Program assures the highest re...
Description GaAs FET & HEMT Chips

File Size 85.55K  /  4 Page

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    FSX027WF

Eudyna Devices Inc
Part No. FSX027WF
OCR Text ...um power applications up to the 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers or oscillators. Fujitsu's stringent Quality Assurance Program assures the highest re...
Description General Purpose GaAs FET

File Size 107.78K  /  4 Page

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    FHX45X

Eudyna Devices Inc
Part No. FHX45X
OCR Text 12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg 0.15m, Wg = 280m Gold Gate Metallization for High Reliability Gate Drain DESCRIPTION The FHX45X is a Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general ...
Description GaAs FET & HEMT Chips

File Size 57.81K  /  4 Page

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    TC1401

Transcom, Inc.
Part No. TC1401
OCR Text ... gain compression point, f = 12ghz,v ds = 8 v, i ds = 120 ma 26.5 27 dbm g l linear power gain, f = 12ghz,v ds = 8 v, i ds = 120 ma 8 9 db ip3 intercept point of the 3 rd -order intermodulation, f = 12ghz,v ds = 8 v...
Description 0.5 W High Linearity and High Efficiency GaAs Power FETs

File Size 155.21K  /  4 Page

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    TC1401N

Transcom, Inc.
Part No. TC1401N
OCR Text ...gain compression point , f = 12ghz,v ds = 8 v, i ds = 120 ma 26.5 27 dbm g l linear power gain, f = 12ghz,v ds = 8 v, i ds = 120 ma 9 db ip3 intercept point of the 3 rd -order intermodulation, f = 12ghz,v ds = 8 v, ...
Description 0.5 W High Linearity and High Efficiency GaAs Power FETs

File Size 171.68K  /  5 Page

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For 1.2ghz Found Datasheets File :: 324    Search Time::1.859ms    
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