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640v Datasheet PDF File

For 640v Found Datasheets File :: 379 Search Time::1.031ms
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				Fairchild Semiconductor
Part No.	SSH7N80A
OCR Text	...A VGS=30V VGS=-30V VDS=800V VDS=640v,TC=125 C VGS=10V,ID=0.85A VDS=50V,ID=0.85A 4 O* 4 O See Fig 7 VDS=5V,ID=250A 1500 1950 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=400V,ID=2A, RG=16 See Fig 13 45 OO VDS=640v,VGS=10V, ID=2A ...
Description	Advanced Power MOSFET
File Size	256.65K / 6 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
Part No.	STP12NK80Z STB12NK80ZT4 STB12NK80Z STW12NK80Z
OCR Text	...t Capacitance VGS=0, VDS =0V to 640v Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=640v, ID = 10.5 A VGS =10V (see Figure 17) Table 6. Symbol td(on) tr td(off) tf tr(Voff) tf tc Switching times Parameter Turn-on Delay T...
Description	N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET N沟道800V 0.65欧姆- 10.5A20 / D2PAK封装/47齐纳保护SuperMESH功率MOSFET
File Size	318.56K / 15 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STP12NK80Z 9567
OCR Text	... pF pF VGS = 0V, VDS = 0V to 640v SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 400 V, ID = 5.25 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 640v, ID = 10.5 A, VGS = 10V Min. Typ. 30 18 87 14 44 Max. U...
Description	N-CHANNEL 800V 0.65 OHM 10.5A TO-220/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET From old datasheet system
File Size	160.68K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT31N80JC3
OCR Text	...ain-Source Voltage slope (VDS = 640v, ID = 31A, TJ = 125C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/C C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 670 STATIC ELECTRICAL CHARACTER...
Description	SUPER JUNCTION MOSFET
File Size	173.21K / 5 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导
Part No.	STB7NK80ZT4 STP7NK80ZFP STP7NK80Z STB7NK80Z-1 STB7NK80Z 8979
OCR Text	... pF pF VGS = 0V, VDS = 0V to 640v SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 400 V, ID = 2.6 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 640v, ID = 5.2 A, VGS = 10V Min. Typ. 20 12 40 7 21 56 Max. U...
Description	N-CHANNEL 800V - 1.5 OHM - 5.2A TO-220/TO-220FP/I2PAK/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET N-CHANNEL800V-1.5ohm - 5.2A TO-220/TO-220FP/I2PAK/D2PAK Zener-Protected SuperMESH?Power MOSFET N-CHANNEL800V-1.5ohm - 5.2A TO-220/TO-220FP/I2PAK/D2PAK Zener-Protected SuperMESH⑩Power MOSFET N-CHANNEL MOSFET From old datasheet system
File Size	586.15K / 13 Page	View it Online	Download Datasheet

				MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
Part No.	APT11N80KC3 APT11N80KC3G
OCR Text	...ain-Source Voltage slope (VDS = 640v, ID = 11A, TJ = 125C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/C C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 470 STATIC ELECTRICAL CHARACTER...
Description	Power MOSFET; Package: TO-220 [K]; ID (A): 11; RDS(on) (Ohms): 0.45; BVDSS (V): 800; Super Junction MOSFET
File Size	157.32K / 5 Page	View it Online	Download Datasheet

				MICROSEMI POWER PRODUCTS GROUP ADPOW[Advanced Power Technology]
Part No.	APT17N80BC3 APT17N80SC3 MICROSEMIPOWERPRODUCTSGROUP-APT17N80SC3G
OCR Text	...ain-Source Voltage slope (VDS = 640v, ID = 17A, TJ = 125C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/C C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 670 STATIC ELECTRICAL CHARACTER...
Description	17 A, 800 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Super Junction MOSFET
File Size	171.83K / 5 Page	View it Online	Download Datasheet

				MICROSEMI POWER PRODUCTS GROUP ADPOW[Advanced Power Technology]
Part No.	APT34N80B2C3 APT34N80LC3
OCR Text	...ain-Source Voltage slope (VDS = 640v, ID = 34A, TJ = 125C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/C C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 670 STATIC ELECTRICAL CHARACTER...
Description	34 A, 800 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET Super Junction MOSFET
File Size	173.71K / 5 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTC80A10SCT
OCR Text	...0 250 300 Gate Charge (nC) VDS=640v ID=42A TJ=25C VDS=160V VDS=400V 10000 1000 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website - http://www.advancedpower.com 5-7 APTC80A10SCT - Rev 1 May, 2004 A...
Description	Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
File Size	309.91K / 7 Page	View it Online	Download Datasheet

				CET[Chino-Excel Technology]
Part No.	CEF07N8
OCR Text	...r tD(OFF) tf Qg Qgs Qgd VDS =640v, ID = 6A, VGS =10V 6-138 8 36 CEF07N8 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter DYNAMIC CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfer Capac...
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
File Size	42.34K / 5 Page	View it Online	Download Datasheet

For 640v Found Datasheets File :: 379 Search Time::1.031ms
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