samsungs pdf Datasheet P9 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : TT8J1 WP7113 STK4021 1H100 ISP118 EGA16 APL6535 312005P
	Product Description
	Full Text Search

samsungs Datasheet PDF File

For samsungs Found Datasheets File :: 418 Search Time::1.953ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K7A403200B K7A403200B-QC K7A403201B K7A403201B-QC K7A403209B K7A403209B-QC K7A403600B K7A403600B-QC K7A403601B K7A403601B-QC K7A403609B K7A403609B-QC K7B403225B K7B403225B-QC K7B403625B K7B403625B-QC K7B401825B-QC K7B401825B K7A401800B K7A401809B K7A401809B-QC K7A401800B-QC K7A801800
OCR Text	...K7A401800B are fabricated using samsungs high performance CMOS technology and is available in a 100pin TQFP package. Multiple power and ground pins are utilized to minimize ground bounce. FAST ACCESS TIMES PARAMETER Cycle Time Clock Acc...
Description	256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 128Kx36/x32 & 256Kx18 Synchronous SRAM
File Size	468.48K / 18 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K7A403609A K7A401809A K7A403609B
OCR Text	...K7A401809A are fabricated using samsungs high performance CMOS technology and is available in a 100pin TQFP package. Multiple power and ground pins are utilized to minimize ground bounce. FAST ACCESS TIMES PARAMETER Cycle Time Clock Acc...
Description	256K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet 128K x 36-Bit Synchronous Pipelined Burst SRAM Data Sheet 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM 128Kx36/x32 & 256Kx18 Synchronous SRAM
File Size	461.50K / 17 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM68512A KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L KM68512ALT-7L KM68512ALG-5 KM68512ALG-5L KM68512ALG-7 KM68512ALG-7L KM68512ALT-5L
OCR Text	...512A families are fabricated by samsungs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data re...
Description	2.7 V to 5.5 V, <100 µA, 8-Bit nanoDAC® D/A Converter with I2C Compatible Interface, Tiny SC70 Package; Package: SC70; No of Pins: 6; Temperature Range: Industrial LJT 22C 22#22D PIN RECP 64Kx8 bit Low Power CMOS Static RAM
File Size	142.22K / 9 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL
OCR Text	...DRAM family is fabricated using samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES * Part Identification - K4E660412D-JC/L(3.3V, 8K Ref., SOJ) - K4E640412D-JC/L(3.3V, 4K Ref.,...
Description	16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. 16M x 4bit CMOS Dynamic RAM with Extended Data Out
File Size	414.70K / 21 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL-6 K4E640812B-TC-45 K4E660812B-JC-6 K4E660812B-JC-45 K4E660812B-JC-5
OCR Text	...DRAM family is fabricated using samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES * Part Identification - K4E660812B-JC/L(3.3V, 8K Ref., SOJ) - K4E640812B-JC/L(3.3V, 4K Ref.,...
Description	8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns
File Size	415.47K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5 K4E640812C-JC-45 K4E660812C-JCL-5
OCR Text	...DRAM family is fabricated using samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES * Part Identification - K4E660812C-JC/L(3.3V, 8K Ref.) - K4E640812C-JC/L(3.3V, 4K Ref.) - K4...
Description	8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
File Size	415.01K / 21 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K6R4008V1D
OCR Text	... The device is fabricated using samsungs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4008V1D is packaged in a 400 mil 36...
Description	512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
File Size	237.20K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K7N801845B K7N803645B DSK7N803645B K7N803649B-QC25 DS_K7N803645B K7M801825B-QC65 K7M803625B-QC65 K7N801801B-QC16 K7N801809B-QC25 K7N801845B-QC16 K7N801849B-QC25 K7N803601B-QC16 K7N803609B-QC25 K7N803645B-QC16
OCR Text	...K7N801845B are implemented with samsungs high performance CMOS technology and is available in 100pin TQFP and Multiple power and ground pins minimize ground bounce. FAST ACCESS TIMES PARAMETER Cycle Time Clock Access Time Output Enable ...
Description	256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
File Size	376.90K / 18 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S8030DT-GF8
OCR Text	...ords by 8 bits, fabricated with samsungs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, prog...
Description	2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM00万8位4银行同步DRAM LVTTL 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz
File Size	116.15K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM48S8030 KM48S8030C KM48S8030CT-G_FA KM48S8030CT-G/FA
OCR Text	...ords by 8 bits, fabricated with samsungs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, prog...
Description	2M x 8Bit x 4 Banks Synchronous DRAM 200万8位4银行同步DRAM
File Size	81.46K / 8 Page	View it Online	Download Datasheet

For samsungs Found Datasheets File :: 418 Search Time::1.953ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |