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  -6.0a Datasheet PDF File

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    BUK563-60A

NXP Semiconductors N.V.
Philips Semiconductors
Part No. BUK563-60A
OCR Text ...itching applications. BUK563-60A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 60 21 ...
Description PowerMOS transistor Logic level FET 21 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 48.89K  /  8 Page

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    BUK555-60A BUK555-60B

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BUK555-60A BUK555-60B
OCR Text ...itching applications. BUK555-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK555 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V M...
Description PowerMOS transistor Logic level FET 35 A, 60 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 51.28K  /  7 Page

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    SICK AG
Part No. MM12-60A-N-ZW0
OCR Text 60a-n-zw0 mm namur magnetic proximity sensors 50 (1.97) 40 (1.57) 10 (0.39) m12 x 1 1 2 3 30 (1.18) 60 (2.36) 90 (3.54) 120 (4.72) distance in mm (inch) 0 1 mag-3315-b (m 5.1) 2 mag-3015-b (m 5.0) 3 mag-3010-b (m 4.0) 4 mag-2006...
Description MAGNETIC PROXIMITY SENSORS

File Size 2,030.04K  /  7 Page

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    BUK466-60A

Philips Semiconductors
NXP Semiconductors
Part No. BUK466-60A
OCR Text 60A GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, weldin...
Description PowerMOS transistor 52 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 52.85K  /  7 Page

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    BUK465-60A

NXP Semiconductors
Philips Semiconductors
Part No. BUK465-60A
OCR Text 60A GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, weldin...
Description PowerMOS transistor

File Size 54.63K  /  7 Page

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    BUK463-60A BUK463-60B

NXP Semiconductors N.V.
Philips Semiconductors
Part No. BUK463-60A BUK463-60B
OCR Text 60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in ...
Description PowerMOS transistor 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
PowerMOS transistor 20 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 72.75K  /  7 Page

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    BUK462-60A

NXP Semiconductors N.V.
Philips Semiconductors
Part No. BUK462-60A
OCR Text 60A mGENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, weldi...
Description PowerMOS transistor 15 A, 60 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 52.38K  /  7 Page

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    BUK473-60A BUK473-60B

NXP Semiconductors
Philips Semiconductors
Part No. BUK473-60A BUK473-60B
OCR Text 60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters,...
Description PowerMOS transistor Isolated version of BUK453-60A/B

File Size 53.13K  /  7 Page

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    SICK AG
Part No. MM12-60A-N-ZC0
OCR Text 60a-n-zc0 mm namur magnetic proximity sensors + (l+) - (m) 14 3 2 not connectednot connected a b c d e f h i j k l m n o p q r s t 40 (1.57) 62.5 (2.46) m12 x 1 1 2 3 30 (1.18) 60 (2.36) 90 (3.54) 120 (4.72) distance i...
Description MAGNETIC PROXIMITY SENSORS

File Size 3,211.44K  /  7 Page

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