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For 1.1us Found Datasheets File :: 1179 Search Time::2.984ms
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				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PBTR2045CT PBTR2045CTB PBYR2045CT PBYR2045CTB PBYR2040CTB PBYR2040CT PBTR2040CT PBTR2040CTB PBYR2035CTB
OCR Text	...ENCE DATA VR = 40 V/ 45 V a1 1 k2 a2 3 IO(AV) = 20 A VF 0.57 V GENERAL DESCRIPTION Dual, common cathode schottky rectifier dio...1us 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR1645 Fig.3. Typical and max...
Description	DB25 EXT CABLE 6 FT MF 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB DB25 EXT CABLE 6 FT MM Rectifier diodes Schottky barrier
File Size	41.84K / 6 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	PBYR2045CTF PBYR2045CTX PBYR2040CTF PBYR2040CTX PBYR2035CTX
OCR Text	...V IO(AV) = 20 A VF 0.57V a1 1 k2 a2 3 GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope wi...1us 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR2045ctx Fig.3. Typical and ...
Description	Rectifier diodes Schottky barrier COMPUTER ACCESSORY 10 A, 40 V, SILICON, RECTIFIER DIODE PARALLEL PRINTER CABLE 50 10 A, 40 V, SILICON, RECTIFIER DIODE DB25 EXT CABLE 10 FT MF 10 A, 45 V, SILICON, RECTIFIER DIODE
File Size	43.25K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	IRF730
OCR Text	...DSS = 400 V ID = 7.2 A RDS(ON) 1 s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in...1us 10us 1ms 100us 10ms tp, pulse width (s) 100ms 1s Fig.1. Normalised power dissipat...
Description	PowerMOS transistor Avalanche energy rated
File Size	55.04K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHB7N60E PHP7N60E PHW7N60E
OCR Text	...= 600 V g ID = 7 A RDS(ON) 1.2 s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use ...1us 10us 1ms 100us 10ms tp, pulse width (s) 100ms 1s Fig.1. Normalised power dissipat...
Description	PowerMOS transistors Avalanche energy rated
File Size	91.11K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHX7N60E
OCR Text	...600 V g ID = 3.6 A RDS(ON) 1.2 s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use ...1us 10us 100us 1ms 10ms tp, pulse width (s) Fig.1. Normalised power dissipation. PD% = 100P...
Description	PowerMOS transistors Avalanche energy rated
File Size	75.58K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	FSAM20SH60A
OCR Text	...ring * Inverter power rating of 1.5kW / 100~253 Vac * Isolation rating of 2500Vrms/min. * Very low leakage current due to using ceramic subs...1us/div. time : 0.1us/div. (a) Turn-on (a) turn-on (b) Turn-off (b) turn-off Fig. 5. Exp...
Description	16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor SPMTM (Smart Power Module)
File Size	971.53K / 17 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
Part No.	FSAM20SM60A
OCR Text	...ring * Inverter power rating of 1.5kW / 100~253 Vac * Isolation rating of 2500Vrms/min. * Very low leakage current due to using ceramic subs...1us/div. time : 0.1us/div. (a) Turn-on (a) turn-on (b) Turn-off (b) turn-off Fig. 5. Exp...
Description	20A, Smart Power Module (SPM) SPMTM (Smart Power Module)
File Size	2,335.38K / 16 Page	View it Online	Download Datasheet

				http:// NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BY329X1500 BY329X-1500S BY329X-1500 BY329X-1500S127
OCR Text	...REFERENCE DATA VR = 1500 V VF 1.35 V / 1.5 V IF(peak) = 6 A (f = 16 kHz) IF(peak) = 6 A (f = 70 kHz) IFSM 75 A trr 230 ns / 160 ns k ...1us T 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BY229F 10s Fig.7. Transient th...
Description	Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes Damper diode fast, high-voltage Damper diode fast/ high-voltage Damper diodes fast, high-voltage - I<sub>FRM</sub>: 16 A; I<sub>O (AV)</sub>: 10 A; V<sub>RRM</sub>: 1500 V; Package: SOD113 (TO-220F); Container: Horizontal, Rail Pack
File Size	37.92K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BYM357DX
OCR Text	... V 3 MODULATOR VR=600 V VF 1.03 V IF(peak) = 7 A IFSM 70 A trr 60 ns 1 VF 1.3 V IF(RMS) =15.7 A 2 IFSM 60 A trr 300 ns...1us T 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV29F 10s 0.001 1us T 1...
Description	Damper-Modulator fast, high-voltage
File Size	50.64K / 7 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BYM357X
OCR Text	...ENCE DATA DAMPER VR=1500 V VF 1.3 V IF(peak) =7 A MODULATOR VR=600 V VF 1.03 V IF(peak) = 7 A IFSM 70 A trr 60 ns 1 3 2 IFS...1us T 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV29F 10s 0.001 1us T 1...
Description	Damper-Modulator fast/ high-voltage Damper-Modulator fast, high-voltage
File Size	49.83K / 7 Page	View it Online	Download Datasheet

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