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11226 99046 SAB8051 UDZ51B 50B2LC RS804 MM1571X SC1405
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  1081344 Datasheet PDF File

For 1081344 Found Datasheets File :: 6    Search Time::3.187ms    
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    L4969 L4969MD 7302

STMicroelectronics
Part No. L4969 L4969MD 7302
OCR Text ...4 128 256 320 400 784 1600 3200 1081344 0.3 0.85 120 0.4 1.4 280 Max. Unit tWDC tWDC tWDC tWDC tWDC tWDC tWDC tWDC tWDC tWDC tWDC tWDC tWDC tWDC tWDC tWDC tWDC tWDC V V K CAN Line Interface tdrd tddr SRD 0.4 0.4 4 0.5 1.0 1.0 5 1.5 2.0 8...
Description SYSTEM VOLTAGE REGULATOR WITH FAULT TOLERANT LOW SPEED CAN-TRANSCEIVER
From old datasheet system

File Size 335.44K  /  35 Page

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    ST Microelectronics
Part No. L4969D013TR L4969013TR
OCR Text ...s) 3200 t wdc wdt = 12 (45min) 1081344 t wdc v resl reset output low voltage i res = 500u, v1 = 2.5v 0 0.3 0.4 v i res = 500u, v1 = 1.5v 0 0.85 1.4 v r pures internal reset pull-up resistance 60 120 280 k w can line interface t drd pro...
Description SYSTEM VOLTAGE REGULATOR WITH FAULT TOLERANT LOW SPEED CAN-TRANSCEIVER

File Size 342.74K  /  34 Page

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    意法半导
Part No. L4969
OCR Text ...s) 3200 t wdc wdt = 12 (45min) 1081344 t wdc v resl reset output low voltage i res = 500u, v1 = 2.5v 0 0.3 0.4 v i res = 500u, v1 = 1.5v 0 0.85 1.4 v r pures internal reset pull-up resistance 80 120 280 k w can line interface t drd pro...
Description SYSTEM VOLTAGE REGULATOR WITH FAULT TOLERANT LOW SPEED CAN-TRANSCEIVER

File Size 342.33K  /  35 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K9F1G08U0A
OCR Text ...ure consists of 32 cells. total 1081344 nand cells reside in a block. the program and read opera- tions are executed on a page basis, while the erase operation is executed on a block basis. the memory array consists of 1024 se p- arately e...
Description FLASH MEMORY

File Size 685.20K  /  37 Page

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    K9F1G08Q0A K9F1G08U0A K9F1G08Q0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1G08Q0A K9F1G08U0A K9F1G08Q0M
OCR Text ...ure consists of 32 cells. Total 1081344 NAND cells reside in a block. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array consists of 1024 separately erasabl...
Description 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

File Size 673.54K  /  37 Page

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