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  12.7-ohm Datasheet PDF File

For 12.7-ohm Found Datasheets File :: 21675    Search Time::1.656ms    
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    AD5235 AD5235BRU25 AD5235BRU250

ANALOG DEVICES INC
Analog Devices, Inc.
AD[Analog Devices]
Part No. AD5235 AD5235BRU25 AD5235BRU250
OCR Text ...3 t4 t5 t6 t7 t8 t9 t 10 t 11 t 12 t 13 t 14 t 15 t 16 tPR Conditions Max Units ns ns ns ns ns ns ns ns ns ms ns ns ns ms ns ns ...7 8 15 CS 14 PR 13 WP 12 VDD 11 A2 10 W2 9 B2 AD5235 AD5235 PIN CONFIGURATION 16 RDY AD5235 ...
Description Audio digital potentiometers DUAL 250K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, PDSO16
Nonvolatile Memory/ Dual 1024 Position Digital Potentiometers
RES MF 1/8W 160K 1% 2PPM
Nonvolatile Memory, Dual 1024 Position Digital Potentiometers

File Size 100.47K  /  10 Page

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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ...600 A/s Tj = 25 C Tj = 125 C 4 12 - Semiconductor Group 3 Jul-31-1996 BSM 50 GB 170 DN2 Power dissipation Ptot = (TC) parame...7 C 0.9 -1 Crss 0 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Sh...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text 12 Q4 D4 18 Q3 D3 15 10 Q6 D6 Q5 D5 16 IGBT SIP MODULE Features * Short Circuit Rated UltraFast: Optimized for high operating frequenci...7 13 19 Product Summary Output Current in a Typical 20 kHz Motor Drive 11 ARMS per phase (...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text ... parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6680S. Schottky barrier diodes exhibit significant le...7" or 177cm diameter reel. This and some other options are further described in the Packaging Inform...
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ... 75 D uty cycle : 50 % T J = 12 5 C T sink = 90 C G a te d rive a s spe cified P ow er D is s ipation = 170 W S q u a re w a v e : 50...7 8 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typic...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ...itance (pF) 30000 Cies 12 20000 8 Coes 10000 Cres 4 0 1 10 100 0 0 200 400 600 800 1000 VCE , Collector-to...7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ...tance (pF) 12000 Cies 12 8000 C oes 4000 8 C res 4 0 1 10 100 0 0 100 200 300 400 VCE , Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emi...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ...ctor-to-Emitter Current Fig. 12 - Reverse Bias SOA 1000 16000 I F = 1 50 A In sta n ta n e ou s F o rw a rd C u rre n t - I F (A ) I F = 7 5A I F = 37 A 12000 100 Q R R - (nC ) TJ = 1 2 5 C TJ = 2 5 C 8000 4000 ...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...gd VDS 50V, ID = 4.1A, (Figure 12) VDD = 125V, ID 8.1A, RG = 12, RL = 1.1 VGS = 10V, (Figures 17, 18) MOSFET Switching Times are Essential...7 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width l...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...ture VDS 50V, ID = 8A, (Figure 12) VDD = 125V, ID 14A, RG = 9.1, RL = 8.9 (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 6.7 - 0.20 0.24 10 16 67 53 49 39 0.28 0.34 24 100 80 74 59 ...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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