|
|
 |

Freescale Semiconductor, Inc
|
Part No. |
MRF19045LR3 MRF19045LR306 MRF19045LSR3
|
OCR Text |
...Q = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) 3rd Order ... |
Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
File Size |
389.69K /
12 Page |
View
it Online |
Download Datasheet
|
|
|
 |
|
Part No. |
AGR19045EF
|
OCR Text |
...dq =550ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) g ps 14.5 15.0 ? db drain efficiency (v dd =28vdc, p out = 9 w average, 2-carrier n-cdma, i dq =550ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1... |
Description |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
File Size |
189.43K /
11 Page |
View
it Online |
Download Datasheet
|
|
|
 |
MOTOROLA INC
|
Part No. |
MRF5S19150S
|
OCR Text |
...= 1400 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) g ps 13 14 ? db drain efficiency (v dd = 28 vdc, p out = 32 w avg, i dq = 1400 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) 24 26 ... |
Description |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
File Size |
454.89K /
12 Page |
View
it Online |
Download Datasheet
|
|
|
 |
FREESCALE SEMICONDUCTOR INC MOTOROLA[Motorola, Inc]
|
Part No. |
MRF5S19090LSR3 MRF5S19090LR3
|
OCR Text |
...Q = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Third Order Intermodulation Dist... |
Description |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET 1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
|
File Size |
409.09K /
12 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Motorola
|
Part No. |
MRF5S19090LR3 MRF5S19090LSR3 MRF5S19090LR MRF5S19090L
|
OCR Text |
...Q = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Third Order Intermodulation Dist... |
Description |
1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
File Size |
437.91K /
12 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|