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  1N8 Datasheet PDF File

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    Inchange Semiconductor ...
Part No. SPW11N80C3
Description isc N-Channel MOSFET Transistor

File Size 329.94K  /  2 Page

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HUA FENG CIRCUIT





    New Jersey Semiconductor
Part No. 1N74 1N60D 1N68A 1N96A 1N72 1N73 1N93 1N63 1N61 1N83 1N86 1N95
Description Diode Switching 100V 10A 2-Pin
Diode Switching 50V 3A 2-Pin Case A
GOLD BOUNDED GERMANUM DIODE
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R
Diode Switching 125V 0.0003A 2-Pin DO-35
Diode Switching 50V 0.005A 2-Pin Case H
GOLD BONDED GERMANIUM DIODES

File Size 46.23K  /  1 Page

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    1N821 1N823 1N829A 1N821A 1N823A 1N825 1N825A 1N827 1N827A 1N829

MOTOROLA[Motorola, Inc]
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
MOTOROLA INC
Part No. 1N821 1N823 1N829A 1N821A 1N823A 1N825 1N825A 1N827 1N827A 1N829
Description TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V/ 400 mW
TRANSF 5VAC 2.4A SPLIT PACK
TRANSF 1.75 OHM DUAL GATE DRIVE
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
Bobbins Transformer; Supply Voltage:230V; Power Rating:12VA; Mounting Type:PCB Surface; Approval Bodies:cURus; External Depth:1.875"; External Height:1.438"; External Width:1.563"; Frequency:60GHz; Leaded Process Compatible:Yes

File Size 37.01K  /  4 Page

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    1N3064M 1N901 1N899 1N898 1N900 1N902 1N897

MICROSEMI[Microsemi Corporation]
Part No. 1N3064M 1N901 1N899 1N898 1N900 1N902 1N897
Description PELLET DIODES
From old datasheet system

File Size 68.02K  /  3 Page

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    ZLNB101 ZLNB101N8 ZLNB101X8

Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
Diodes Incorporated
Part No. ZLNB101 ZLNB101N8 ZLNB101X8
Description M39012 MIL RF CONNECTOR SPECIALTY ANALOG CIRCUIT, PDSO8
DUAL POLARISATION SWITCH TWIN LNB MULTIPLEX CONTROLLER

File Size 76.03K  /  5 Page

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    Bourns Electronic Solut...
Part No. CI160808-15NJ CI160808-1N8D CI160808-27NJ CI160808-1N5D CI160808-22NJ CI160808-10NJ CI160808-1N2D
Description Multi-Layer Chip Inductors

File Size 208.62K  /  2 Page

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    BKC International Electronics
Part No. 1N911 1N910 1N909 1N773 1N773A 1N805 1N772 1N772A 1N776 1N777
Description 30 V, 500 mA, gold bonded germanium diode
40 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
65 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
20 V, 500 mA, gold bonded germanium diode

File Size 788.05K  /  22 Page

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    SPLE01N81G2

OSRAM GmbH
Part No. SPLE01N81G2
Description Aktiv gekulter Diodenlaser-Barren, 60 W cw bei 808 nm

File Size 124.84K  /  7 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT31N80JC3
Description Super Junction MOSFET

File Size 248.14K  /  5 Page

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    Taiyo Yuden (U.S.A.), I...
Part No. HKQ04021N8C-T
Description High-Q Multilayer Chip Inductors for High Frequency Applications

File Size 131.73K  /  1 Page

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