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  27-ohm Datasheet PDF File

For 27-ohm Found Datasheets File :: 27201    Search Time::1.578ms    
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    AD5235 AD5235BRU25 AD5235BRU250

ANALOG DEVICES INC
Analog Devices, Inc.
AD[Analog Devices]
Part No. AD5235 AD5235BRU25 AD5235BRU250
OCR Text ... to +5V Single Supply Operation 2.5V Dual Supply Operation 30 bytes of general purpose nonvolatile memory APPLICATIONS Mechanical Potentiome...7 Bandwidth -3dB Total Harmonic Distortion VW Settling Time Resistor Noise Voltage Crosstalk BW_25K ...
Description Audio digital potentiometers DUAL 250K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, PDSO16
Nonvolatile Memory/ Dual 1024 Position Digital Potentiometers
RES MF 1/8W 160K 1% 2PPM
Nonvolatile Memory, Dual 1024 Position Digital Potentiometers

File Size 100.47K  /  10 Page

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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ...(th) 4.8 5.5 3.4 4.6 0.4 1.6 6.2 3.9 5.3 V VGE = VCE, IC = 4 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, I...7 C 0.9 -1 Crss 0 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Sh...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ...e space is at a premium. IMS-2 Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE VISOL PD @ TC = ...7 lbf*in ( 0.55-0.8 N*m) Units V A s V VRMS W C Thermal Resistance Parameter RJC (IGB...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text ... * D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o ...
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ... VCES = 1200V VCE(on) typ. = 2.4V @VGE = 15V, IC = 100A Benefits * Increased operating efficiency * Direct mounting to heatsink * Pe...7 8 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typic...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ... VCES = 1200V VCE(on) typ. = 2.2V @VGE = 15V, IC = 125A Benefits * Increased operating efficiency * Direct mounting to heatsink * Pe...7 4.2 V IF = 125A, VGE = 0V -- 2.6 -- IF = 125A, VGE = 0V, TJ = 125C Gate-to-Emitter Leakage Current...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ... VCES = 1200V VCE(on) typ. = 2.4V @VGE = 15V, IC = 50A Benefits * Increased operating efficiency * Direct mounting to heatsink * Per...7 -- IF = 50A, VGE = 0V, TJ = 125C Gate-to-Emitter Leakage Current -- -- 250 nA VGE = 20V Parameter ...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ... VCES = 1200V VCE(on) typ. = 2.1V @VGE = 15V, IC = 75A Benefits * Increased operating efficiency * Direct mounting to heatsink * Per...7.0 8.0 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Ty...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ... DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow prop...7) 8.1 6.5 - 100 A A nA IGSS rDS(ON) VGS = 20V VGS = 10V, ID = 4.1A, (Figures 8, 9...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ... DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow prop...7 - 0.20 0.24 10 16 67 53 49 39 0.28 0.34 24 100 80 74 59 S ns ns ns ns nC - 6.6 20...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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For 27-ohm Found Datasheets File :: 27201    Search Time::1.578ms    
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