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  28.0w Datasheet PDF File

For 28.0w Found Datasheets File :: 104    Search Time::2.703ms    
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    Q62702-F1494 BFR280W

SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1494 BFR280W
OCR Text 280W NPN Silicon RF Transistor * For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA * fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge s...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems
From old datasheet system

File Size 56.22K  /  7 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP280W Q62702-F1504
OCR Text 280W NPN Silicon RF Transistor * For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA * fT = 7,5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge s...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
From old datasheet system
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

File Size 59.70K  /  7 Page

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    INTERNETOFFICE500

List of Unclassifed Manufacturers
List of Unclassifed Manufac...
Part No. INTERNETOFFICE500
OCR Text ...ttery low/replace status. 500va/280w power handling ability supports entry-level pcs, network workstations, point-of-sale equipment, small business phone systems, audio/video equipment and home theater systems. offers 4.6 min. battery runti...
Description Internet Office 500VA Tower Standby 120V UPS with USB port

File Size 498.72K  /  6 Page

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    ECJ-2VB1H104K ECJ-2VB1H103K ERJ-8GEY0R00 ERJ-8GEYJ100V ERJ-8GEYJ510 ATC800A560JT 800A820JT RFHA1020PCBA-410 35F0121-1SR-

RF Micro Devices
Part No. ECJ-2VB1H104K ECJ-2VB1H103K ERJ-8GEY0R00 ERJ-8GEYJ100V ERJ-8GEYJ510 ATC800A560JT 800A820JT RFHA1020PCBA-410 35F0121-1SR-10 RFHA1020S2 RFHA1020SB RFHA1020SQ RFHA1020SR RFHA1020TR13
OCR Text ... out vd pin 2 gnd base rfha1020 280w gan wide-band pulsed power amplifier the rfha1020 is a 50v 280w high power discrete amplifier designed for l-band pulsed radar, air traffic control and su rveillance and general purpose broadband amplifi...
Description 280W GaN WIDE-BAND PULSED POWER AMPLIFIER

File Size 746.53K  /  10 Page

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    ECA-2AM100 ECJ-2VB1H103K 1812SMS-68NJLB ERJ-8GEYJ100V ERJ-8GEYJ510 28F0181-1SR-10 ATC800A2R0BT 35F0121-1SR-10 ATC800A0R2

RF Micro Devices
Part No. ECA-2AM100 ECJ-2VB1H103K 1812SMS-68NJLB ERJ-8GEYJ100V ERJ-8GEYJ510 28F0181-1SR-10 ATC800A2R0BT 35F0121-1SR-10 ATC800A0R2BT ATC800A101JT ATC800A820JT ECJ-2VB1H104K RFHA1025 RFHA1025PCBA-410 RFHA1025TR13 ECJ-2VB2A103K ECJ-2VB2A104K RFHA1025SR RFHA1025S2
OCR Text ...ase rf ou t vd pin 2 t rfha1025 280w gan wideband pulsed power amplifier the rfha1025 is a 50v 280w high power discrete amplifier designed for l-band pulsed radar, air traffic control and su rveillance and general purpose broadband amplifie...
Description 280W GaN Wideband Pulsed Power Amplifier

File Size 873.57K  /  10 Page

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    ATC100A0R7BT ATC100A0R2BT ATC100A120JT ATC100A220JT 9337CKE100M C2012X7R2A103M EEA-FC1E100 ERJ-8GEYJ510 ERJ-8GEYJ100V 28

RF Micro Devices
Part No. ATC100A0R7BT ATC100A0R2BT ATC100A120JT ATC100A220JT 9337CKE100M C2012X7R2A103M EEA-FC1E100 ERJ-8GEYJ510 ERJ-8GEYJ100V 28F0181-1SR-10 35F0121-1SR-10 RF3928TR13 ERJ-6GEYJ120V ERJ-3GEY0R00 RF3928PCBA-410 RF3928S2 RF3928SB RF3928SQ RF3928SR ATC100B620JT 0805G102M101NT
OCR Text ...rf out vd pin 2 gnd base rf3928 280w gan wideband pulsed power amplifier the rf3928 is a 50v 280w high power discrete amplifier designed for s-band pulsed radar, air traffic control and su rveillance and general purpose broadband amplifier ...
Description 280W GaN WIDEBAND PULSED POWER

File Size 929.00K  /  11 Page

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    Infineon
Part No. BFR280W
OCR Text 280w oct-25-1999 1 npn silicon rf transistor for low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2 ma to 8 m f t = 7.5 ghz f = 1.5 db at 900 mhz 1 ...
Description NPN Silicon RF Transistor for low noi...

File Size 133.73K  /  7 Page

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    RFHA1020

RF Micro Devices
Part No. RFHA1020
OCR Text ... out vd pin 2 gnd base rfha1020 280w gan wide-band pulsed power amplifier the rfha1020 is a 50v 280w high power di screte amplifier designed for l-band pulsed radar, air traffic control and su rveillance and general purpose broadband amplif...
Description 280W GaN WIDE-BAND PULSED POWER AMPLIFIER

File Size 1,334.35K  /  10 Page

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    Infineon
Part No. BFP280W
OCR Text 280w oct-12-1999 1 npn silicon rf transistor for low noise, low-power amplifiers in mobile communications systems (pager, cordless telephone) at collector currents from 0.2 ma to 8 m f t = 7.5 ghz f = 1.5 db at 900mhz vp...
Description NPN Silicon RF Transistor for low noi...

File Size 134.23K  /  7 Page

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    HRL12280W

CSB Battery Co., Ltd.
Part No. HRL12280W
OCR Text 280W Specification Cells per unit Voltage per unit Capacity Weight Maximum Discharge Current Internal Resistance Operating Temperature Range HRL 12280W is specially designed for high efficient discharge application. Its characteristi...
Description specially designde for high efficient discharge application

File Size 496.25K  /  2 Page

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For 28.0w Found Datasheets File :: 104    Search Time::2.703ms    
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