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SEMICOA[Semicoa Semiconductor]
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| Part No. |
2n3468
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| OCR Text |
2n3468
Type 2n3468
Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV
Features: * * * * General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case. Also available in chip form using the 6706 chip geomet... |
| Description |
Type 2n3468 Geometry 6706 Polarity PNP
Type 2n3468 Geometry 6706 Polarity PNP
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| File Size |
43.50K /
2 Page |
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CENTRAL[Central Semiconductor Corp]
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| Part No. |
2n3468 2N3467
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| OCR Text |
...0 PRINCIPAL DEVICE TYPES 2N3467 2n3468 EPITAXIAL PLANAR 30 x 30 MILS 9.0 MILS 3.85 x 4.20 MILS 7.35 x 3.75 MILS Al - 30,000A Au - 15,000A
BACKSIDE COLLECTOR
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1... |
| Description |
Small Signal Transistor PNP- Saturated Switch Transistor Chip
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| File Size |
74.59K /
1 Page |
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Central Semiconductor
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| Part No. |
CP667
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| OCR Text |
... princip al device types 2n3467 2n3468 geometry process details backside collector r1 (1-august 2002) process epitaxial planar die size 31 x 31 mils die thickness 9.0 mils base bonding pad area 5.9 x 11.8 mils emitter bonding pad area 6.5 ... |
| Description |
Chip Form: SATURATED SWITCH TRANSISTOR
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| File Size |
198.64K /
2 Page |
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it Online |
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Central Semiconductor
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| Part No. |
CP767
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| OCR Text |
2n3468 geometry process details r0 (24-june 2003) 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com gross die per 4 inch w afer 12,300 backside collector process epitaxial planar die size ... |
| Description |
Chip Form: SATURATED SWITCH TRANSISTOR
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| File Size |
74.76K /
1 Page |
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it Online |
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