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  2N65 Datasheet PDF File

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    USHA India LTD
Part No. 2N6515
Description High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.

File Size 46.33K  /  1 Page

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HUA FENG CIRCUIT





    Central Semiconductor
Part No. 2N6576
Description Leaded Power Transistor Darlington

File Size 96.67K  /  3 Page

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    2N6576

General Semiconductor
Part No. 2N6576
Description 15 AMPERE NPN DARLINGTON POWER TRAN

File Size 215.01K  /  6 Page

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    2N6516

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. 2N6516
Description NPN EPITAXIAL SILICON TRANSISTOR

File Size 35.96K  /  1 Page

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    Inchange Semiconductor ...
Part No. 2N6512
Description    isc Silicon NPN Power Transistor

File Size 136.66K  /  2 Page

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    SEME-LAB[Seme LAB]
Part No. 2N6534
Description Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.(80V, 8A)

File Size 11.28K  /  1 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. 2N6518
Description PNP EPITAXIAL SILICON TRANSISTOR

File Size 39.88K  /  1 Page

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    2N6519

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. 2N6519
Description PNP EPITAXIAL SILICON TRANSISTOR

File Size 37.19K  /  1 Page

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    2N6520

List of Unclassifed Manufacturers
ETC[ETC]
Part No. 2N6520
Description HIGH VOLTAGE TRANSISTOR

File Size 108.70K  /  3 Page

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    2N6560

SemeLAB
Seme LAB
Part No. 2N6560
Description Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.

File Size 10.67K  /  1 Page

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